B01D53/869

SYSTEMS AND METHODS FOR TREATMENT OF VENTILATION AIR METHANE

A process for air purification includes feeding a first stream comprising methane into a regenerative thermal oxidizer (RTO). The RTO is configured to thermally oxidize a first portion of the methane within the first stream. The process also includes obtaining a thermally oxidized first stream from the RTO. The thermally oxidized first stream comprises a second portion of the methane, and the second portion of the methane is not thermally oxidized within the RTO. In addition, the process includes feeding the thermally oxidized first stream into a catalytic reactor configured to catalytically oxidize the second portion of methane within the thermally oxidized first stream. The catalytic reactor comprises a methane catalyst. Further, the process includes obtaining a methane lean stream from the catalytic reactor.

Devices and methods for gas purification treatment

A device for gas purification treatment may include: a light oxidation reactor, a light source being disposed in the light oxidation reactor, the light source being configured to emit first light and second light, the light oxidation reactor being configured to perform a first-stage purification treatment on a gas under irradiation of the first light; a catalytic ozone oxidation reactor configured for second-stage purification treatment of the gas; a photocatalytic reactor configured to perform a third-stage purification treatment on the gas under irradiation of the second light; wherein, the photocatalytic reactor is adjacent to the light oxide reactor, and the photocatalytic reactor and the light oxide reactor are separated by a light transmittance component, so that the second light passes through the light transmittance component into the photocatalytic reactor.

METHOD FOR CONTROLLING SEMICONDUCTOR PROCESS ENVIRONMENT
20260115662 · 2026-04-30 ·

A method for controlling the semiconductor process environment is provided. The method includes placing a cleaning member in a processing chamber of a semiconductor processing tool. The method also includes creating a vacuum in the processing chamber. Furthermore, the method includes eliminating at least one compound from the residues in the processing chamber by the cleaning member. The cleaning member is configured to facilitate physical adsorption, catalysis, or chemical reactions with the residues in the processing chamber.