It can be difficult to remove atomically thin films, such as graphene, graphene-based material and other two-dimensional materials, from a growth substrate and then to transfer the thin films to a secondary substrate. Tearing and conformality issues can arise during the removal and transfer processes. Processes for forming a composite structure by manipulating a two-dimensional material, such as graphene or graphene-base material, can include: providing a two-dimensional material adhered to a growth substrate; depositing a supporting layer on the two-dimensional material while the two-dimensional material is adhered to the growth substrate; and releasing the two-dimensional material from the growth substrate, the two-dimensional material remaining in contact with the supporting layer following release of the two-dimensional material from the growth substrate.

In a first aspect, the present disclosure relates to a method for forming a diamond membrane, comprising: providing a substrate having an amorphous dielectric layer thereon, the amorphous dielectric layer comprising an exposed surface, the exposed surface having an isoelectric point of less than 7, preferably at most 6; seeding diamond nanoparticles onto the exposed surface; growing a diamond layer from the seeded diamond nanoparticles; and removing a portion of the substrate from underneath the diamond layer, the removed portion extending at least up to the amorphous dielectric layer, thereby forming the diamond membrane over the removed portion.

Methods for forming porous or nanoporous semiconductor materials are described. The methods allow for the formation of arrays pores or nanopores in semiconductor materials with advantageous pore size, spacing, pore volume, material thickness, and other aspects. Porous and nanoporous materials also are provided.

Provided are nanoporous silicon nitride membranes and methods of making such membranes. The membranes can be part of a monolithic structure or free-standing. The membranes can be made by transfer of the nanoporous structure of a nanoporous silicon or silicon oxide film by, for example, reactive ion etching. The membranes can be used in, for example, filtration applications, hemodialysis applications, hemodialysis devices, laboratory separation devices, multi-well cell culture devices, electronic biosensors, optical biosensors, active pre-concentration filters for microfluidic devices.

A ceramic mixture for forming a ceramic material includes ceramic nanoparticles, a primary pore former polymer capable of crosslinking, a secondary pore former polymer configured to form micron-sized pores in the ceramic material, and a polymerization initiator.

Methods and apparatus for forming apertures in a solid state membrane using dielectric breakdown are provided. In one disclosed arrangement a plurality of apertures are formed. The membrane comprises a first surface area portion on one side of the membrane and a second surface area portion on the other side of the membrane. Each of a plurality of target regions comprises a recess or a fluidic passage opening out into the first or second surface area portion. The method comprises contacting all of the first surface area portion of the membrane with a first bath comprising ionic solution and all of the second surface area portion with a second bath comprising ionic solution. A voltage is applied across the membrane via first and second electrodes in respective contact with the first and second baths comprising ionic solutions to form an aperture at each of a plurality of the target regions in the membrane.

An osmotic power generator comprising an active membrane supported in a housing, at least a first chamber portion disposed on a first side of the active membrane for receiving a first electrolyte liquid and a second chamber portion disposed on a second side of the active membrane for receiving a second electrolyte liquid, a generator circuit comprising at least a first electrode electrically coupled to said first chamber, and at least a second electrode electrically coupled to said second chamber, the first and second electrodes configured to be connected together through a generator load receiving electrical power generated by a difference in potential and an ionic current between the first and second electrodes. The active membrane includes at least one pore allowing ions to pass between the first and second sides of the membrane under osmosis due to an osmotic gradient between the first and second electrolyte liquids to generate said difference in potential and ionic current between the first and second electrodes.

The invention, belonging to the field of membrane technology, presents a method for the direct growth of ultrathin porous graphene separation membranes. Etching agent, organic solvent and polymer are coated on metal foil, and then they are calcined at high temperature in absence of oxygen; after removal of metal substrate and reaction products, single-layered or multi-layered porous graphene membranes are obtained. Alternatively, the dispersion or solution of etching agent is coated on metal foil, on which a polymer film is then overlaid. The obtained sample is subsequently calcined at high temperature in absence of oxygen; after removal of metal substrate and reaction products, single-layered or multi-layered porous graphene membranes are obtained. The method involved in this invention is simple and highly efficient, and allows direct growth of ultrathin porous graphene separation membranes, without needing expensive apparatuses, chemicals and graphene raw material. Additionally, the graphene membranes prepared with this method have controlled pore size, ultrahigh water flux and strong resistance to irreversible fouling.

Method for making a porous graphene layer of a thickness of less than 100 nm with pores having an average size in the range of 5-900 nm, includes the following steps: providing a catalytically active substrate catalyzing graphene formation under chemical vapor deposition conditions, the catalytically active substrate in or on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; chemical vapor deposition using a carbon source in the gas phase and formation of the porous graphene layer on the surface of the catalytically active substrate. The pores in the graphene layer are in situ formed due to the presence of the catalytically inactive domains.

A filter for filtering nucleated cells that includes a body containing at least either a metal or a metal oxide as its main component; and plural through holes, each of which have a shape other than a square shape, formed therein. An arithmetic average roughness of a first side of the filter part is smaller than a size of a nucleus of the nucleated cells to be filtered.