A metal particle aggregate includes metal particles and an organic substance. The metal particles include first particles that contain one or both of silver and copper in an amount of 70% by mass or more relative to 100% by mass of all metals and have a particle diameter of 100 nm or more and less than 500 nm at a ratio of 20 to 30% by number, and include second particles that have a particle diameter of 50 nm or more and less than 100 nm, and third particles that have a particle diameter of less than 50 nm at a ratio of 80 to 70% by number in total. Surfaces of the first to third particles are covered with the same protective film.

A metal particle aggregate includes metal particles and an organic substance. The metal particles include first particles that contain one or both of silver and copper in an amount of 70% by mass or more relative to 100% by mass of all metals and have a particle diameter of 100 nm or more and less than 500 nm at a ratio of 20 to 30% by number, and include second particles that have a particle diameter of 50 nm or more and less than 100 nm, and third particles that have a particle diameter of less than 50 nm at a ratio of 80 to 70% by number in total. Surfaces of the first to third particles are covered with the same protective film.

The invention relates to methods for producing supported catalysts, comprising: providing a metal foam element A made of nickel; applying an aluminum-containing powder MP to metal foam element A, such that metal foam element AX is obtained; thermally treating metal foam element AX in order to form an alloy between metal foam element A and the aluminum-containing powder MP, such that metal foam element B is obtained; oxidatively treating metal foam element B, such that metal foam element C is obtained; and applying a catalytically active layer, comprising at least one carrier oxide and at least one catalytically active component, to at least one part of the surface of metal foam element C, such that a supported catalyst is obtained. The invention also relates to the supported catalysts obtained according to the method, and to the use thereof in chemical transformations.

The present invention provides a silver paste containing at least a silver powder, a binder resin, and an organic solvent, wherein the silver powder contains a first silver powder having a D50 of 3.50 to 7.50 μm and a second silver powder having a D50 of 0.80 to 2.00 μm, where D50 represents a 50% value of a volume-based cumulative fraction obtained by laser diffraction particle size distribution measurement; a copper content of the whole silver powder is 10 to 5000 ppm by mass; a copper content of the second silver powder is 80 ppm by mass or more; and the first silver powder contains substantially no copper. The present invention provides a silver paste containing a powder in a high concentration and excellent in printability, and provides a silver conductor film that has a high filling factor, a high film density, high electrical conductivity, and excellent migration resistance.

This disclosure relates to a method of manufacturing an electrically conductive thick film comprising steps of: (a) applying a fine silver particle dispersion on a substrate, wherein the fine silver particle dispersion comprises, (i) 60 to 95 wt. % of fine silver particles, wherein particle diameter (D50) of the fine silver particles is 50 to 300 nm, (ii) 4.5 to 39 wt. % of a solvent; and (iii) 0.1 to 3 wt. % of a resin, wherein the glass transition temperature (Tg) of the resin is 70 to 300° C., wherein the weight percentages are based on the weight of the fine silver particle dispersion; and (b) heating the applied fine silver particle dispersion at 80 to 1000° C.

Disclosed is a method of manufacturing a three-dimensional multi-layer electronic device, the method including: a unit forming process of forming a multi-layer unit including an electronic component and a circuit wiring by three-dimensional lay-out forming; and a unit lay-out process of manufacturing a three-dimensional multi-layer electronic device by laying out and integrating the multi-layer unit in a vertical direction.

Methods for die attachment of multichip and single components including flip chips may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

The negative electrode active material according to the present embodiment includes alloy particle containing an alloy component and oxygen of 0.50 to 3.00 mass %. The alloy component contains Sn: 13.0 to 40.0 at % and Si: 6.0 to 40.0 at %. The alloy particle contains: one or two phases selected from a D0.sub.3 phase in which the Si content is from 0 to 5.0 at % and a δ phase in which the Si content is from 0 to 5.0 at %; one or two phases selected from an ε phase in which the Si content is from 0 to 5.0 at % and an η′ phase in which the Si content is from 0 to 5.0 at %; and an SiOx phase. The alloy particle has, in an X-ray diffraction profile, a peak having a largest integrated diffraction intensity in a range of 42.0 to 44.0 degrees of a diffraction angle 2θ.

The negative electrode active material according to the present embodiment includes alloy particle containing an alloy component and oxygen of 0.50 to 3.00 mass %. The alloy component contains Sn: 13.0 to 40.0 at % and Si: 6.0 to 40.0 at %. The alloy particle contains: one or two phases selected from a D0.sub.3 phase in which the Si content is from 0 to 5.0 at % and a δ phase in which the Si content is from 0 to 5.0 at %; one or two phases selected from an ε phase in which the Si content is from 0 to 5.0 at % and an η′ phase in which the Si content is from 0 to 5.0 at %; and an SiOx phase. The alloy particle has, in an X-ray diffraction profile, a peak having a largest integrated diffraction intensity in a range of 42.0 to 44.0 degrees of a diffraction angle 2θ.

The present invention provides a silver paste containing at least a silver powder, a binder resin, and an organic solvent, wherein the silver powder contains a first silver powder having a D50 of 3.50 to 7.50 μm and a second silver powder having a D50 of 0.80 to 2.00 μm, where D50 represents a 50% value of a volume-based cumulative fraction obtained by laser diffraction particle size distribution measurement; a copper content of the whole silver powder is 10 to 5000 ppm by mass; a copper content of the second silver powder is 80 ppm by mass or more; and the first silver powder contains substantially no copper. The present invention provides a silver paste containing a powder in a high concentration and excellent in printability, and provides a silver conductor film that has a high filling factor, a high film density, high electrical conductivity, and excellent migration resistance.