B22F2007/047

PASTE COMPOSITION, SEMICONDUCTOR DEVICE, AND ELECTRICAL/ELECTRONIC COMPONENT
20200279792 · 2020-09-03 · ·

There is provided a paste composition using copper fine particles that are capable of exhibiting conductivity after low-temperature sintering, which themselves are less oxidized, and that can be produced with a high yield ratio. A paste composition contains: (A) copper fine particles having a thickness or minor axis of 10 to 500 nm and coated with amino alcohol represented by the chemical formula (1) and (B) an organic solvent.

METHOD FOR PRODUCING FILM
20200246873 · 2020-08-06 ·

The present application provides a method for producing a film. In the present application, for example, a method for producing a film which can be applied to production of a heat-dissipating material such as a heat pipe can be provided.

METHOD FOR PRODUCING FILM
20200246873 · 2020-08-06 ·

The present application provides a method for producing a film. In the present application, for example, a method for producing a film which can be applied to production of a heat-dissipating material such as a heat pipe can be provided.

BASE MATERIAL FOR PRINTED CIRCUIT BOARD AND PRINTED CIRCUIT BOARD
20200245458 · 2020-07-30 ·

According to one aspect of the present disclosure, a base material for a printed circuit board includes: an insulating base film; a sintered body layer that is layered on at least one surface of the base film and that is formed of a plurality of sintered metal particles; and an electroless plating layer that is layered on a surface of the sintered body layer that is opposite to the base film, wherein an area rate of sintered bodies of the metal particles in a cross section of the sintered body layer is greater than or equal to 50% and less than or equal to 90%.

BASE MATERIAL FOR PRINTED CIRCUIT BOARD AND PRINTED CIRCUIT BOARD
20200245458 · 2020-07-30 ·

According to one aspect of the present disclosure, a base material for a printed circuit board includes: an insulating base film; a sintered body layer that is layered on at least one surface of the base film and that is formed of a plurality of sintered metal particles; and an electroless plating layer that is layered on a surface of the sintered body layer that is opposite to the base film, wherein an area rate of sintered bodies of the metal particles in a cross section of the sintered body layer is greater than or equal to 50% and less than or equal to 90%.

Hybrid component with multiple cores and method for treating a component

A hybrid preform component including a plurality of elongated metallic cores and a coating paste is provided. The coating paste envelops the plurality of elongated metallic cores. The coating paste includes a first material having a first melting point, a second material having a second melting point, and a binder. A method for treating a component is also provided. The method includes the step of mixing a second material, a first material, and a binder to make coating paste. The method further includes the step of coating the plurality of cores using the coating paste to form a coated rod assembly. The method further includes the step of compressing the coated rod assembly to envelop the coating paste to the plurality of cores and form a preform component having a near net shape. The method further includes the step of sintering the preform component to form a pre-sintered preform.

Method of Fabricating High-Power Module

A method is provided to fabricate a high-power module. A non-touching needle is used to paste a slurry on a heat-dissipation substrate. The slurry comprises nano-silver particles and micron silver particles. The ratio of the two silver particles is 9:11:1. The slurry is pasted on the substrate to be heated up to a temperature kept holding. An integrated chip (IC) is put above the substrate to form a combined piece. A hot presser processes thermocompression to the combined piece to form a thermal-interface-material (TIM) layer with the IC and the substrate. After heat treatment, the TIM contains more than 99 percent of pure silver with only a small amount of organic matter. No volatile organic compounds would be generated after a long term of use. No intermetallic compounds would be generated while the stability under high temperature is obtained. Consequently, embrittlement owing to procedure temperature is dismissed.

NEGATIVE ELECTRODE ACTIVE MATERIAL, NEGATIVE ELECTRODE, AND BATTERY
20200152980 · 2020-05-14 ·

The negative electrode active material according to the present embodiment includes alloy particle containing an alloy component and oxygen of 0.50 to 3.00 mass %. The alloy component contains Sn: 13.0 to 40.0 at % and Si: 6.0 to 40.0 at %. The alloy particle contains: one or two phases selected from a D0.sub.3 phase in which the Si content is from 0 to 5.0 at % and a phase in which the Si content is from 0 to 5.0 at %; one or two phases selected from an phase in which the Si content is from 0 to 5.0 at % and an phase in which the Si content is from 0 to 5.0 at %; and an SiOx phase. The alloy particle has, in an X-ray diffraction profile, a peak having a largest integrated diffraction intensity in a range of 42.0 to 44.0 degrees of a diffraction angle 2.

NEGATIVE ELECTRODE ACTIVE MATERIAL, NEGATIVE ELECTRODE, AND BATTERY
20200152980 · 2020-05-14 ·

The negative electrode active material according to the present embodiment includes alloy particle containing an alloy component and oxygen of 0.50 to 3.00 mass %. The alloy component contains Sn: 13.0 to 40.0 at % and Si: 6.0 to 40.0 at %. The alloy particle contains: one or two phases selected from a D0.sub.3 phase in which the Si content is from 0 to 5.0 at % and a phase in which the Si content is from 0 to 5.0 at %; one or two phases selected from an phase in which the Si content is from 0 to 5.0 at % and an phase in which the Si content is from 0 to 5.0 at %; and an SiOx phase. The alloy particle has, in an X-ray diffraction profile, a peak having a largest integrated diffraction intensity in a range of 42.0 to 44.0 degrees of a diffraction angle 2.

Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices

The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and a lead-tellurium-boron-oxide dispersed in an organic medium.