A laser welding method includes preliminarily heating an entire welding path by irradiating the entire welding path with a heating laser beam for a first predetermined time, the welding path being closed loop-shaped and formed at a boundary between two workpieces as welding objects, and performing scanning with a welding laser beam along the welding path while continuously performing the irradiation with the heating laser beam after the preliminary heating and terminating the irradiation with the welding laser beam after the welding laser beam goes around the welding path.

Disclosed is a system for efficiently cutting a transparent substrate. The system includes a laser source in optical communication with at least one multi-foci optical system. The laser source outputs at least one optical signal to the optical system. The optical system is positioned between the laser source and the substrate to be cut. The optical system includes at least one housing detachably coupled to at least one base member. One or more plate members having one or more apertures formed therein may be coupled to at least one of the housing, the baser member, or both. The aperture formed on the plate member may be configured to permit the optical signal to enter and exit the optical system. Various optical subassemblies may be positioned within or coupled to the optical system.

Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

An apparatus and its use for laser processing along with a method and an optical component. A first laser device provides a first optical feed fiber and a second laser device provides a second optical feed fiber. A beam combining means connected to the first and second feed fibers and to a multi-core optical fiber is adapted to form a composite laser beam by having the first optical feed fiber aligned with a first core of the multi-core optical fiber and the second optical feed fiber aligned with at least one second core of the multi-core optical fiber. The first and second cores outputs a composite laser beam to a workpiece to be processed. A control unit individually controls the power density of the output laser beams.

Provided is a laser processing method in which a laser processing head for irradiating, with at least a short-pulse laser, a processed article having a protection layer laminated to a metal layer is used to process the processed article, whereby high-quality, highly accurate processing is possible by means of a short-pulse laser processing step for irradiating the protection layer with the short-pulse laser and ablating the protection layer, and a metal layer processing step for ablating the metal layer in the area that was ablated during the short-pulse laser processing step.

A laser machine able to effectively satisfy cutting quality required on one side of a cutting spot of a workpiece. The laser machine comprising a machining head configured to emit a laser beam and an assist gas coaxially and non-coaxially; and a data table in which data of a machining condition for cutting a workpiece using the machining head, and a shift amount, by which a center axis of the assist gas is to be shifted from an optical axis of the laser beam in order to make cutting quality on both sides of a cutting line to be different during cutting the workpiece, are stored in associated with each other.

A laser machine includes a laser oscillator that generates a laser beam that irradiates a first region on a workpiece and a laser beam that irradiates a second region around the first region on the workpiece and a controller that changes an output of the laser beam that irradiates the first region and an output of the laser beam that irradiates the second region on the basis of a thickness of the workpiece so that the respective outputs vary between a period in which a piercing hole is formed in the workpiece and a period in which the workpiece is cut.

The disclosure relates to processing machines and methods for producing three-dimensional components by irradiating powder with a processing beam, the machines including a container with a moveable support for the powder, as well as an irradiating device with a scanner device for aligning the processing beam on a processing field at an opening of the container. The irradiating device includes a heating device that includes a heating radiation source for generating a heating beam for heating the powder from above and including a beam shaping optical unit configured to convert a first beam profile of the heating beam into a second beam profile, e.g., a ring-shaped beam profile, of the heating beam.

A method for laser keyhole welding of metal alloys is disclosed. The method independently adjusts power in a focused center beam and power in a concentric focused annular beam. At the termination of a weld, the power in the center beam is initially ramped up and then ramped down, while the power in the annular beam is ramped down. Increasing the power in the center beam enables a controlled and prolonged contraction of the keyhole and melt pool, thereby preventing undesirable cracking.

A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.