A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi.sub.2S.sub.3-xS.sub.x, MoS.sub.2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

Methods of separating a glass web include exposing a separation path on the glass web to a laser beam that produces thermal stress along the separation path without damaging the glass web. The methods further include redirecting a portion of the laser beam to create a defect on the separation path while the separation path is under thermal stress produced during the exposing the separation path on the glass web to the laser beam, whereupon the glass web separates along the separation path in response to creating the defect. Apparatus are further provided for separating a glass web with at least one laser beam generator that produces a laser beam to heat a separation path and a mirror configured to reflect an end portion of the laser beam to create a defect at a location of the separation path on the glass web.

A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer.

Systems, devices, and methods for additive manufacturing are provided that allow for components being manufactured to be assessed during the printing process. As a result, changes to a print plan can be considered, made, and implemented during the printing process. More particularly, in exemplary embodiments, a spectrometer is operated while a component is being printed to measure one or more parameters associated with one or more layers of the component being printed. The measured parameter(s) are then relied upon to determine if any changes are needed to the way printing is occurring, and if such changes are desirable, the system is able to implement such changes during the printing process. By way of non-limiting examples, printed material in one or more layers may be reheated to alter the printed component, such as to remove defects identified by the spectrometer data. A variety of systems, devices, and methods for performing real-time sensing and control of an additive manufacturing process are also provided.

Systems, devices, and methods for additive manufacturing are provided that allow for components being manufactured to be assessed during the printing process. As a result, changes to a print plan can be considered, made, and implemented during the printing process. More particularly, in exemplary embodiments, a spectrometer is operated while a component is being printed to measure one or more parameters associated with one or more layers of the component being printed. The measured parameter(s) are then relied upon to determine if any changes are needed to the way printing is occurring, and if such changes are desirable, the system is able to implement such changes during the printing process. By way of non-limiting examples, printed material in one or more layers may be reheated to alter the printed component, such as to remove defects identified by the spectrometer data. A variety of systems, devices, and methods for performing real-time sensing and control of an additive manufacturing process are also provided.

This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.

This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.

Discussed is an electrode manufacturing method, in which laser ablation is performed prior to cutting an electrode sheet so that a processing speed of cutting the electrode sheet by using laser is increased, and an electrode forming device for performing same.

An exposure system that performs scanning exposure of a semiconductor substrate by irradiating a reticle with a pulse laser beam includes a laser apparatus configured to emit a pulse laser beam, an illumination optical system through which the pulse laser beam is guided to the reticle, a reticle stage, and a processor configured to control emission of the pulse laser beam from the laser apparatus and movement of the reticle by the reticle stage. The reticle includes a region in which multiple kinds of patterns are arranged in a mixed manner in a scanning width direction orthogonal to a scanning direction of the scanning exposure. The processor instructs the laser apparatus about a target wavelength such that the laser apparatus emits the pulse laser beam of a wavelength with which dispersion of best focus positions corresponding to respective patterns of the multiple kinds of patterns is minimum.

An exposure system that performs scanning exposure of a semiconductor substrate by irradiating a reticle with a pulse laser beam includes a laser apparatus configured to emit a pulse laser beam, an illumination optical system through which the pulse laser beam is guided to the reticle, a reticle stage, and a processor configured to control emission of the pulse laser beam from the laser apparatus and movement of the reticle by the reticle stage. The reticle includes a region in which multiple kinds of patterns are arranged in a mixed manner in a scanning width direction orthogonal to a scanning direction of the scanning exposure. The processor instructs the laser apparatus about a target wavelength such that the laser apparatus emits the pulse laser beam of a wavelength with which dispersion of best focus positions corresponding to respective patterns of the multiple kinds of patterns is minimum.