An apparatus for cutting brittle material comprises an aspheric focusing lens, an aperture, and a laser-source generating a beam of pulsed laser-radiation. The aspheric lens and the aperture form the beam of pulsed laser-radiation into an elongated focus having a uniform intensity distribution along the optical axis of the aspheric focusing lens. The elongated focus extends through the full thickness of a workpiece made of a brittle material. The workpiece is cut by tracing the optical axis along a cutting line. Each pulse or burst of pulsed laser-radiation creates an extended defect through the full thickness of the workpiece.

A manufacturing process of an element chip comprises a preparing step for preparing a substrate having first and second sides opposed to each other, the substrate containing a semiconductor layer, a wiring layer and a resin layer formed on the first side, and the substrate including a plurality of dicing regions and element regions defined by the dicing regions. Also, the manufacturing process comprises a laser grooving step for irradiating a laser beam onto the dicing regions to form grooves so as to expose the semiconductor layer along the dicing regions. Further, the manufacturing process comprises a dicing step for plasma-etching the semiconductor layer along the dicing regions through the second side to divide the substrate into a plurality of the element chips. The laser grooving step includes a melting step for melting a surface of the semiconductor layer exposed along the dicing regions.

A laser beam applying unit of a laser processing apparatus for processing a wafer includes a laser oscillator for emitting a pulsed laser beam having a wavelength transmittable through the wafer, a beam condenser for converging the pulsed laser beam emitted from the laser oscillator onto the wafer held on a chuck table, a beam splitter assembly disposed between the laser oscillator and the beam condenser, for splitting the pulsed laser beam emitted from the laser oscillator to form at least two converged spots on the wafer that are spaced from each other in X-axis directions, and a mask assembly disposed between the laser oscillator and the beam condenser, for reducing the width of the converged spots on the wafer in Y-axis directions to keep the converged spots on the wafer within the width of the projected dicing lines on the wafer.

A laser beam applying unit of a laser processing apparatus for processing a wafer includes a laser oscillator for emitting a pulsed laser beam having a wavelength transmittable through the wafer, a beam condenser for converging the pulsed laser beam emitted from the laser oscillator onto the wafer held on a chuck table, a beam splitter assembly disposed between the laser oscillator and the beam condenser, for splitting the pulsed laser beam emitted from the laser oscillator to form at least two converged spots on the wafer that are spaced from each other in X-axis directions, and a mask assembly disposed between the laser oscillator and the beam condenser, for reducing the width of the converged spots on the wafer in Y-axis directions to keep the converged spots on the wafer within the width of the projected dicing lines on the wafer.

A processing apparatus is equipped with: a first stage system that has a table on which a workpiece is placed and moves the workpiece held by the table; a beam irradiation system that includes a condensing optical system to emit beams; and a controller to control the first stage system and the beam irradiation system, and processing is performed to a target portion of the workpiece while the table and the beams from the condensing optical system are relatively moved, and at least one of an intensity distribution of the beams at a first plane on an exit surface side of the condensing optical system and an intensity distribution of the beams at a second plane whose position in a direction of an optical axis of the condensing optical system is different from the first plane can be changed.

A processing apparatus is equipped with: a first stage system that has a table on which a workpiece is placed and moves the workpiece held by the table; a beam irradiation system that includes a condensing optical system to emit beams; and a controller to control the first stage system and the beam irradiation system, and processing is performed to a target portion of the workpiece while the table and the beams from the condensing optical system are relatively moved, and at least one of an intensity distribution of the beams at a first plane on an exit surface side of the condensing optical system and an intensity distribution of the beams at a second plane whose position in a direction of an optical axis of the condensing optical system is different from the first plane can be changed.

The present disclosure relates to a system for performing an Additive Manufacturing (AM) fabrication process on a powdered material (PM) forming a substrate. The system uses a first optical subsystem to generate an optical signal comprised of electromagnetic (EM) radiation sufficient to melt or sinter a PM of the substrate. The first optical subsystem is controlled to generate a plurality of different power density levels, with a specific one being selected based on a specific PM forming a powder bed being used to form a 3D part. At least one processor controls the first optical subsystem and adjusts a power density level of the optical signal, taking into account a composition of the PM. A second optical subsystem receives the optical signal from the first optical subsystem and controls the optical signal to help facilitate melting of the PM in a layer-by-layer sequence of operations.

The present disclosure relates to a system for performing an Additive Manufacturing (AM) fabrication process on a powdered material (PM) forming a substrate. The system uses a first optical subsystem to generate an optical signal comprised of electromagnetic (EM) radiation sufficient to melt or sinter a PM of the substrate. The first optical subsystem is controlled to generate a plurality of different power density levels, with a specific one being selected based on a specific PM forming a powder bed being used to form a 3D part. At least one processor controls the first optical subsystem and adjusts a power density level of the optical signal, taking into account a composition of the PM. A second optical subsystem receives the optical signal from the first optical subsystem and controls the optical signal to help facilitate melting of the PM in a layer-by-layer sequence of operations.

The present disclosure relates to an apparatus for additively manufacturing a product in a layer-by-layer sequence, wherein the product is formed using powder particles deposited on an interface layer of a substrate. A laser generates first and second beam components. The second beam component has a higher power level and a shorter duration than the first beam component. A mask creates a 2D optical pattern in which only select portions of the second beam components can irradiate the powder particles. The first beam component heats the powder particles close to a melting point, where the particles experience surface tension forces relative to the interface layer. While the particles are heated, the second beam component further heats the particles and also melts the interface layer before the surface tension forces can act on and distort the particles, enabling the particles and the interface layer are able to bond together.

The present disclosure relates to an apparatus for additively manufacturing a product in a layer-by-layer sequence, wherein the product is formed using powder particles deposited on an interface layer of a substrate. A laser generates first and second beam components. The second beam component has a higher power level and a shorter duration than the first beam component. A mask creates a 2D optical pattern in which only select portions of the second beam components can irradiate the powder particles. The first beam component heats the powder particles close to a melting point, where the particles experience surface tension forces relative to the interface layer. While the particles are heated, the second beam component further heats the particles and also melts the interface layer before the surface tension forces can act on and distort the particles, enabling the particles and the interface layer are able to bond together.