A laser light irradiation device includes: a laser light source; a spatial light modulator including a display unit, the spatial light modulator modulating the laser light in accordance with a phase pattern displayed on the display unit; a beam diameter conversion mechanism arranged on an optical path of the laser light between the laser light source and the spatial light modulator, the beam diameter conversion mechanism enlarging or reducing the beam diameter of the laser light; a lens insertion and removal mechanism including a lens configured to vary the beam diameter of the laser light, the lens insertion and removal mechanism being enabled to insert/remove the lens in/from the optical path; and a controller configured to control the phase pattern to be displayed. The controller displays the phase pattern configured to correct a wavefront aberration caused by insertion or removal of the lens.

A method for laser cutting a workpiece includes the steps of guiding a laser beam over the workpiece in a cutting direction so as to produce a cutting kerf with two cutting flanks and melting material on the workpiece at a cutting front that extends between the cutting flanks and adjoins at least one of the cutting flanks at an angle. The laser beam has a non-circular cross section and, at a front of the laser beam in the cutting direction, a continuous cutting beam contour corresponding to the cutting front.

Methods and systems for photopatterning and miniaturization. In some examples, a method for patterning a substrate includes irradiating a pattern onto the substrate with ultraviolet light and heating the substrate, causing the substrate and the pattern to shrink in at least one dimension to form a miniaturized pattern on the substrate. In some examples, a system for patterning a substrate includes an ultraviolet light source, a heater, and a controller configured for irradiating a pattern onto the substrate with ultraviolet light and heating the substrate, causing the substrate and the pattern to shrink in at least one dimension to form a miniaturized pattern on the substrate.

A laser processing method according to a viewpoint of the present disclosure includes radiating ultraviolet pulse laser light onto a workpiece having a stacked structure in which a conductor layer, an insulating layer, and a sacrificial layer are stacked on each other in the presented order, the pulse laser light radiated from the side facing the sacrificial layer, to change a laser ablation processing mode in the sacrificial layer and form a through hole in the sacrificial layer, radiating the pulse laser light onto the insulating layer through the through hole to form an opening in the insulating layer, and removing the sacrificial layer after the formation of the opening.

A laser processing method according to a viewpoint of the present disclosure includes radiating ultraviolet pulse laser light onto a workpiece having a stacked structure in which a conductor layer, an insulating layer, and a sacrificial layer are stacked on each other in the presented order, the pulse laser light radiated from the side facing the sacrificial layer, to change a laser ablation processing mode in the sacrificial layer and form a through hole in the sacrificial layer, radiating the pulse laser light onto the insulating layer through the through hole to form an opening in the insulating layer, and removing the sacrificial layer after the formation of the opening.

A laser processing apparatus includes a laser oscillator configured to emit a laser beam, a slit configured to narrow a width of the laser beam emitted from the laser oscillator to a width corresponding to a dividing groove to form the dividing groove of a predetermined width, a slit moving mechanism configured to move the slit in a direction corresponding to a width direction of the dividing groove, and an adjusting unit configured to make the center of the slit and the cross-sectional center of the laser beam entering the slit coincide with each other in a direction in which the slit moving mechanism moves the slit.

Laser processing head (20) of the present disclosure includes housing (30), transparent protector (40), and temperature sensor (70). Housing (30) includes an optical path of processing laser light (LB). Transparent protector (40) is detachably fixed to housing (30), passes processing laser light (LB), and suppresses dust of work material (W) entering into housing (30). Here, the dust is generated from the work material (W) irradiated with processing laser light (LB). Temperature sensor (70) detects the temperature of transparent protector (40).

Laser processing head (20) of the present disclosure includes housing (30), transparent protector (40), and temperature sensor (70). Housing (30) includes an optical path of processing laser light (LB). Transparent protector (40) is detachably fixed to housing (30), passes processing laser light (LB), and suppresses dust of work material (W) entering into housing (30). Here, the dust is generated from the work material (W) irradiated with processing laser light (LB). Temperature sensor (70) detects the temperature of transparent protector (40).

A method of fiber laser processing of thin film deposited on a substrate includes providing a laser beam from at least one fiber laser which is guided through a beam-shaping unit onto the thin film. The beam-shaping optics is configured to shape the laser beam into a line beam which irradiates a first irradiated thin film area Ab on a surface of the thin film, with the irradiated thin film area Ab being a fraction of the thin film area Af. By continuously displacing the beam shaping optics and the film relative to one another in a first direction at a distance dy between sequential irradiations, a sequence of uniform irradiated thin film areas Ab are formed on the film surface defining thus a first elongated column. Thereafter the beam shaped optics and film are displaced relative to one another at a distance dx in a second direction transverse to the first direction with the distance dx being smaller than a length of the irradiated film area Ab. With the steps performed to form respective columns, the elongated columns overlap one another covering the desired thin film area Af. The dx and dy distances are so selected that that each location of the film area Af is exposed to the shaped laser beam during a cumulative predetermined duration.

A method of fiber laser processing of thin film deposited on a substrate includes providing a laser beam from at least one fiber laser which is guided through a beam-shaping unit onto the thin film. The beam-shaping optics is configured to shape the laser beam into a line beam which irradiates a first irradiated thin film area Ab on a surface of the thin film, with the irradiated thin film area Ab being a fraction of the thin film area Af. By continuously displacing the beam shaping optics and the film relative to one another in a first direction at a distance dy between sequential irradiations, a sequence of uniform irradiated thin film areas Ab are formed on the film surface defining thus a first elongated column. Thereafter the beam shaped optics and film are displaced relative to one another at a distance dx in a second direction transverse to the first direction with the distance dx being smaller than a length of the irradiated film area Ab. With the steps performed to form respective columns, the elongated columns overlap one another covering the desired thin film area Af. The dx and dy distances are so selected that that each location of the film area Af is exposed to the shaped laser beam during a cumulative predetermined duration.