A joined article includes a first component having a laser-treated surface portion and a second component having a laser-treated surface portion. An adhesive joins the first component to the second component at the treated surface portion. A method of making a joined article form components and a system for making joined articles are also disclosed.

An optical device, its use, and a method for interference structuring of a sample. A laser emits a laser beam that is split into at least two partial beams by a beam splitter. A first cylindrical lens and a second cylindrical lens for refracting the partial beams into an interference area are arranged in the beam path. The partial beams interfere in such a way that a structure having linear structure elements may be formed in a structural region of the sample. The cylinder axis of the first cylindrical lens is aligned parallel to the cylinder axis of the second cylindrical lens.

A method of processing a transparent workpiece that includes directing a laser beam combination comprising a first beam and a second beam into the transparent workpiece simultaneously, the first beam passing through an impingement surface of the transparent workpiece at a first impingement location and the second beam passing through the impingement surface at a second impingement location. The first beam forms a first laser beam focal line in the transparent workpiece and generates a first induced absorption to produce a first defect segment within the transparent workpiece, the first defect segment having a first chamfer angle and the second beam forms a second laser beam focal line in the transparent workpiece and generates a second induced absorption to produce a second defect segment within the transparent workpiece, the second defect segment having a second chamfer angle, the second chamfer angle differing from the first chamfer angle.

A method of splitting a semiconductor work piece includes: forming a separation zone within the semiconductor work piece, wherein forming the separation zone comprises modifying semiconductor material of the semiconductor work piece at a plurality of targeted positions within the separation zone in at least one physical property which increases thermo-mechanical stress within the separation zone relative to a remainder of the semiconductor work piece, wherein modifying the semiconductor material in one of the targeted positions comprises focusing at least two laser beams to the targeted position; and applying an external force or stress to the semiconductor work piece such that at least one crack propagates along the separation zone and the semiconductor work piece splits into two separate pieces. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.

An adjustment method of a laser processing apparatus includes a spatial light modulator adjustment step of adjusting a spatial light modulator into a state ready for splitting a laser beam emitted from a laser oscillator and applying a plurality of laser beams such that laser beams will have a desired positional relation, a processing mark formation step of operating the laser oscillator to apply the laser beams to a wafer such that a plurality of processing marks is formed, an imaging step of stopping the laser oscillator, and imaging the processing marks formed at the wafer, and an aberration correction step of correcting aberration of the condenser by comparing the desired positional relation and a positional relation among the imaged processing marks, and adjusting the spatial light modulator such that the positional relation among the processing marks conforms to the desired positional relation.

Provided are a variable pulse width flat-top laser device and an operation method therefor. A variable pulse width flat-top laser device includes a light source unit including first and second laser light sources driven at different times to respectively emit pulse-type first and second laser beams, a beam shaping unit configured to shape the first and second laser beams emitted from the light source unit into flat-top laser beams, a combination/split unit located between the light source unit and the beam shaping unit, and including a first beam combination/split unit configured to combine optical paths of the first and second laser beams and split a combined optical path into at least two optical paths so that the split at least two optical paths are directed to different regions of an incident surface of the beam shaping unit, and an imaging optical system configured to time-sequentially overlay the flat-top laser beams shaped by the beam shaping unit on a target object to form an image.

An irradiation device for additively manufacturing three-dimensional objects may include a beam generation device configured to generate an energy beam, an optical modulator including a micromirror array disposed downstream from the beam generation device, and a focusing lens assembly disposed downstream from the optical modulator. The micromirror array may include a plurality of micromirror elements configured to reflect a corresponding plurality of beam segment of the energy beam along a beam path incident upon the focusing lens assembly. The focusing lens assembly may include one or more lenses configured to focus the plurality of beam segments such that for respective ones of a plurality of modulation groups including a subset of micromirror elements, a corresponding subset of beam segments are focused to at least partially overlap with one another at a combination zone corresponding to the respective modulation group.

A method is proposed for producing a packaging, having a method step of microperforation of a flexible material as a packaging film, comprising: provision of the flexible material as a packaging film, transport of the flexible material over a transport section, provision of a laser in order to generate a perforation of the flexible material with its beam. For a packaging with improved gas exchange, a laser system with a wavelength in the range of from 150 nm to 1064 nm, preferably from 355 nm to 532 nm, is used for the laser, and the perforation with the laser is carried out during the movement of the flexible material of the packaging film during the transport.

A monocrystalline silicon wafer fabricated such that a particular crystal plane, e.g., a crystal plane (100), included in crystal planes {100} is exposed on each of face and reverse sides of the monocrystalline silicon wafer is irradiated with a laser beam along a first direction parallel to the particular crystal plane and inclined to a particular crystal orientation, e.g., a crystal orientation [010], included in crystal orientations <100> at an angle of 5° or less, thereby forming a peel-off layer that functions as separation initiating points between a part of the monocrystalline silicon wafer that belongs to the face side thereof and a part of the monocrystalline silicon wafer that belongs to the reverse side thereof.

A laser processing device includes a control unit, and the control unit executes a first process of controlling a laser irradiation unit according to a first processing condition set such that a modified region and a modified region are formed inside a wafer; a second process of identifying a state related to each of the modified regions, and of determining whether or not the first processing condition is proper; a third process of controlling the laser irradiation unit according to a second processing condition set such that the modified regions are formed and a modified region is formed between the modified regions in a thickness direction of the wafer inside the wafer; and a fourth process of identifying a state related to each of the modified regions, and of determining whether or not the second processing condition is proper.