B23K26/0738

Apparatus for generating a line-shaped intensity distribution of a laser radiation
11105961 · 2021-08-31 · ·

An apparatus for generating a line-shaped intensity distribution of laser radiation comprises first and second beam transformation devices spaced apart from one another and at least one focusing element to focus laser radiation that has passed through the first and second beam transformation devices into a line-shaped intensity distribution. The apparatus is configured to change the line width of the line-shaped intensity distribution in a line transverse direction by changing a distance between the first and second beam transformation devices.

Method for determining the reference focal position of a laser beam

A method for determining a reference focal position of a laser beam for processing a plate-like member, the method comprising producing at least two incisions in the plate-like member with the laser beam set at different focal positions, irradiating the plate-like member with the laser beam, detecting edges of the incisions by measuring one or more parameters relating to the irradiation of the plate-like member, and establishing a width of the at least two incisions using the detected one or more parameters.

LASER REFLOW APPARATUS
20210220945 · 2021-07-22 ·

A laser reflow apparatus capable of reducing tact time for a single bonding object, and accelerating an overall bonding process for all of a plurality of bonding objects is provided. The laser reflow apparatus comprises a bonding object transfer unit including a stage, a laser emission unit, a beam transmission plate, and a beam transmission plate transfer unit.

OPTICAL ARRANGEMENT AND LASER SYSTEM

An optical arrangement converts an input laser beam into a line-like output beam, which propagates along a propagation direction and which has, in a working plane, a line-like beam cross section extending along a line direction. The optical system includes: a reshaping optical unit having an input aperture, through which the input laser beam is radiated, and an elongate output aperture, elongatedly extending along an aperture longitudinal direction, the reshaping optical unit converting the input laser beam radiated through the input aperture into a beam packet exiting through the output aperture; and a homogenization optical unit which converts the beam packet into the line-like output beam, different beam segments of the beam packet being intermixed and superimposed along the line direction. The aperture longitudinal direction extends in a manner rotated about the propagation direction by a non-vanishing angle of rotation with respect to the line direction.

Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same

Silica-containing substrates including vias with a narrow waist, electronic devices incorporating a silica-containing substrate, and methods of forming vias with narrow waist in silica-containing substrates are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol % silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter at the first surface wherein the first diameter is less than or equal to 100 μm, a second diameter at the second surface wherein the first diameter is less than or equal to 100 μm, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.

ADDITIVE MANUFACTURING BY SPATIALLY CONTROLLED MATERIAL FUSION

Methods and apparatuses for additive manufacturing are described. A method for additive manufacturing may include exposing a layer of material on a build surface to one or more projections of laser energy including at least one line laser having a substantially linear shape. The intensity of the line laser may be modulated so as to cause fusion of the layer of material according to a desired pattern as the one or more projections of laser energy are scanned across the build surface.

Linear groove formation method and linear groove formation device

A linear groove formation method of forming linear grooves in a steel sheet surface using etching can form linear grooves of a uniform shape while suppressing a decrease in magnetic property of a grain-oriented electrical steel sheet caused by laser irradiation for resist removal. A linear groove formation method includes: coating a surface of a grain-oriented electrical steel sheet with a resist; performing a laser scan cyclically in a rolling direction of the grain-oriented electrical steel sheet, the laser scan being applying a laser while scanning the laser in a direction crossing the rolling direction to remove the resist in a portion irradiated with the laser; and etching the grain-oriented electrical steel sheet in each portion in which the resist is removed, to form a linear groove. A coating thickness of the resist is 0.5 μm to 10 μm, and a power of the laser is 1500 W or more.

METHOD FOR PREPARING AND/OR PERFORMING THE SEPARATION OF A SUBSTRATE ELEMENT AND SUBSTRATE SUB-ELEMENT
20210276133 · 2021-09-09 ·

The present disclosure relates to a method for preparing and/or performing the separation of a substrate element into at least two substrate sub-elements along a separation face and a substrate sub-element which is manufactured and/or can be manufactured in particular by use of the method according to the disclosure.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Method and device for laser-based machining of flat substrates

A method for laser-based machining of a flat substrate, to separate the substrate into a plurality of sections, in which the laser beam of a laser is directed at the substrate using an optical arrangement, which is positioned in the beam path of the laser. The optical arrangement forms a laser beam focal line that is extended as viewed along the beam direction and the substrate is positioned relative to the laser beam focal line such that an induced absorption is produced in the material of the substrate along a section of the laser beam focal line that is extended as viewed in the beam direction.