To realize a laser irradiation apparatus by using which accuracy in processing a substrate can be improved. A laser irradiation apparatus according to an embodiment includes a laser irradiation unit configured to apply laser light to a substrate, a base part, and a conveyance stage configured to convey the substrate. The conveyance stage includes a stage configured to be movable over the base part, a base flange fixed over the stage, a substrate stage fixed to an upper end part of the base flange and configured so that the substrate is placed thereover, and a pusher pin for supporting the substrate, the pusher pin being configured to penetrate the substrate stage and to be movable up and down.

There is provided an optical axis adjustment jig including a flat parallel-surface plate having an upper surface and a lower surface with reflective films disposed respectively thereon, and an image capturing unit disposed beneath the flat parallel-surface plate for capturing an image of a laser beam applied thereto. The flat parallel-surface plate is made of a material that is transmissive of a wavelength of the laser beam. The laser beam is applied through the flat parallel-surface plate to the image capturing unit. A tilt of the optical axis of the laser beam is detected on the basis of the shape of the beam spot of the laser beam whose image has been captured by the image capturing unit.

A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).

A double-sided machining laser machine tool is provided for machining a workpiece having opposite first and second machining surfaces. The machine tool includes a laser machining apparatus and a mechanical arm. The laser machining apparatus includes a laser source, a light guiding-and-focusing lens assembly, a three-axis moving stage, an optical inspection device, and a control device. The control device drives the three-axis moving stage moving the workpiece to a machining horizontal coordinate and a machining altitude according to a current horizontal coordinate and a current altitude of the work piece. The control device drives the laser source and the light guiding-and-focusing lens assembly focusing the laser light to the first machining surface. The mechanical arm is controlled by the control device. When the machining of the first machining surface is finished, the mechanical arm flips over the workpiece to allow the laser machining apparatus to machine the second machining surface.

A processing system includes a holding apparatus for hold an object to be rotatable; a rotation apparatus for rotating the holding apparatus; a beam irradiation apparatus for irradiating the object with an energy beam; an object measurement apparatus for measuring the object; and a control apparatus for controlling at least one of the beam irradiation apparatus and the rotation apparatus based on an information related to the object measured by the object measurement apparatus and an information of a rotational axis of the rotation apparatus, and processes the object by irradiating the object held by the holding apparatus with the energy beam from the beam irradiation apparatus.

Methods and systems for crystallizing a thin film provide a laser beam spot that is continually advanced across tire thin film to create a sustained complete or partial molten zone that is translated across the thin film, and crystallizes to form uniform, small-grained crystalline structures or grains.

A laser machining device which condenses a laser light inside a wafer and forms modified regions in a plurality of layers in the wafer, includes an infrared imaging optical system configured to face one surface of the wafer. In a case where a modified region positioned on a side of another surface opposite to the one surface of the wafer is defined as a first modified region and another modified region is defined as a second modified region, among the modified regions in the plurality of layers, the infrared imaging optical system has a focusing range that includes the first modified region and the another surface, and simultaneously images the first modified region and the another surface, and the second modified region is positioned outside the focusing range.

Numerous embodiments are disclosed. In one, a laser-processing apparatus includes a positioner arranged within a beam path along which a beam of laser energy is propagatable. A controller may be used to control an operation of the positioner to deflect the beam path within first and second primary angular ranges, and to deflect the beam path to a plurality of angles within each of the first and second primary angular ranges. In another, an integrated beam dump system includes a frame; and a pickoff mirror and beam dump coupled to the frame. In still another, a wavefront correction optic includes a mirror having a reflective surface having a shape characterized by a particular ratio of fringe Zernike terms Z4 and Z9. Many more embodiments are disclosed.

A method and apparatus for direct writing of single crystal super alloys and metals. The method including heating a substrate to a predetermined temperature below its melting point; using a laser to form a melt pool on a surface of the substrate, wherein the substrate is positioned on a base plate, and wherein the laser and the base plate are movable relative to each other, the laser being used for direct metal deposition; introducing a superalloy powder to the melt pool; and controlling the temperature of the melt pool to maintain a predetermined thermal gradient on a solid and liquid interface of the melt pool so as to form a single crystal deposit on the substrate. The apparatus configured to generally achieve the aforementioned method.

A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 μm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.