Provided is a laser annealing apparatus causing laser light to be radiated to processing receiving areas arranged, out of a first direction and a second direction perpendicular to the first direction, along at least the second direction and move a batch radiation area and a workpiece in the first direction, and the laser annealing apparatus includes an energy density measuring apparatus measuring the energy density at, out of first and second ends of the batch radiation area in the second direction, at least the second end, an energy density adjusting apparatus adjusting the energy density at the first end, and a controller controlling the energy density adjusting apparatus. The energy density at the first end when (N+1)-th scanning is performed is so adjusted that the energy density at the first end in an (N+1)-th scan area approaches the energy density at the second end in the N-th scan area.

A method for fabricating a protonic ceramic energy device includes: coating an electrolyte layer on an anode layer; and densifying the electrolyte layer by a rapid laser reactive sintering (RLRS) process on the electrolyte layer and/or the anode layer to form a half-cell comprising a dense electrolyte and a porous anode.

A laser oscillator support table includes a base, a fixed plate supported over the base with intermediary of a Z-axis direction movement unit, and a Y-axis direction moving plate mounted on the fixed plate, movable orthogonal to an X-axis direction. An optical path direction of the beam emitted from a laser oscillator supported by the laser oscillator support table is defined as the X-axis direction. The laser oscillator support table further includes a rotating plate that is mounted on the Y-axis direction moving plate rotatably around a rotation center pin fixed to the Y-axis direction moving plate and supports the laser oscillator, a Y-axis direction movement unit that moves the Y-axis direction moving plate in the Y-axis direction, and a rotational movement unit that rotates the rotating plate around the rotation center pin in a plane parallel to a plane formed by the X-axis direction and the Y-axis direction.

Laser cutting systems and methods are described herein. One or more systems include a laser generating component, an optical component, a fixture for holding a support with a part positioned on the support, and a control mechanism for adjusting at least one of the laser generating component, the optical component, and the fixture such that a ratio of a laser energy applied to the part and a part material thickness is maintained within a predetermined acceptable range at each point along a cut path to cut through the part while maintaining the integrity of the support. Other systems and methods are disclosed herein.

A method for separating a workpiece includes providing ultrashort laser pulses using an ultrashort pulse laser, and introducing material modifications into the workpiece along a separation line using the ultrashort laser pulses. The workpiece includes a transparent material. The method further includes separating the material of the workpiece along the separation line. The laser pulses form a laser beam that is incident onto the workpiece at a work angle. An optical aberration of the laser pulses during a transition into the material of the workpiece is reduced by an aberration correction device. The laser beam has a non-radially symmetric transverse intensity distribution, with the transverse intensity distribution appearing elongate in a direction of a first axis in comparison with a second axis perpendicular to the first axis.

An apparatus for fabricating a part, comprising a curved shaft; a build plate connected to the curved shaft; a motor; and a transmission connecting the motor and the curved shaft. The build plate moves along a curved path having a radius of curvature originating on an axis when the transmission transfers power from the motor to the curved shaft. Material deposited on the build plate along the curved path forms the part comprising a solid of revolution around the axis. In one or more examples, the part is an aircraft engine inlet.

A pulsed laser apparatus for milling a sample is described. The apparatus includes a pulsed laser, a scan head for scanning a beam from the pulsed laser across the sample an F-theta lens for focusing the scanned beam onto the sample and a confocal detector for detection of ablation depth. Methods of pulsed laser milling are also described.

Methods and systems for crystallizing a thin film provide a laser beam spot that is continually advanced across the thin film to create a sustained complete or partial molten zone that is translated across the thin film, and crystallizes to form uniform, small-grained crystalline structures or grains.

Laser cutting systems and methods are described herein. One or more systems include a laser generating component, an optical component, a fixture for holding a support with a part positioned on the support, and a control mechanism for adjusting at least one of the laser generating component, the optical component, and the fixture such that a ratio of a laser energy applied to the part and a part material thickness is maintained within a predetermined acceptable range at each point along a cut path to cut through the part while maintaining the integrity of the support. Other systems and methods are disclosed herein.

A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 μm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.