A method of forming a film cooling hole in a component having an internal surface and an external surface is disclosed herein that includes forming the component with a first feature on the external surface, measuring a geometry of the external surface to determine a first placement of the first feature, and drilling the film cooling hole through the component at the first placement.

A method for fabricating an orifice in a semiconductor which can include: removing a first depth of the semiconductor using a first material removal technique and removing a second depth of the semiconductor using a second material removal technique. The method can optionally include: adding a sacrificial layer of material and reducing a depth of the semiconductor by a friction-based material removal technique. In examples, the method fabricates a wafer-scale processor with a set of fastening features.

A substrate carrier made of glass for processing a transparent or transmissive substrate by electromagnetic radiation includes a first upper side serving as a substrate support and a lower side facing away from the upper side. The substrate support and/or the lower side of the substrate carrier has a structuring produced by modifications in the substrate carrier and a material removal by action of an etching medium in respective regions of the modifications in the substrate carrier. The structuring has a plurality of adjacent and/or merging conical recesses. At least one of the conical recesses is configured as a through-hole of the substrate carrier between the substrate support and the lower side, and a plurality of other ones of the conical recesses are configured as depressions.

A substrate carrier made of glass for processing a transparent or transmissive substrate by electromagnetic radiation includes a first upper side serving as a substrate support and a lower side facing away from the upper side. The substrate support and/or the lower side of the substrate carrier has a structuring produced by modifications in the substrate carrier and a material removal by action of an etching medium in respective regions of the modifications in the substrate carrier. The structuring has a plurality of adjacent and/or merging conical recesses. At least one of the conical recesses is configured as a through-hole of the substrate carrier between the substrate support and the lower side, and a plurality of other ones of the conical recesses are configured as depressions.

A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

A process of forming a shaped cooling passage in an article comprising positioning the article within a laser drilling apparatus; laser ablating a near net-shaped cooling passage having a meter section and a diffuser section; forming a re-recast on an interior wall of said cooling passage in both the meter section and the diffuser section; positioning the article within an electric discharge machining apparatus; and electric discharge machining said re-cast from said interior wall at both the meter section and diffusor section with the same electric discharge machine electrode to form a finished shaped cooling passage.

A process of forming a shaped cooling passage in an article comprising positioning the article within a laser drilling apparatus; laser ablating a near net-shaped cooling passage having a meter section and a diffuser section; forming a re-recast on an interior wall of said cooling passage in both the meter section and the diffuser section; positioning the article within an electric discharge machining apparatus; and electric discharge machining said re-cast from said interior wall at both the meter section and diffusor section with the same electric discharge machine electrode to form a finished shaped cooling passage.

A system and method for fabricating an orifice in a multi-layered semiconductor substrate and singulation of the semiconductor substrate includes adding a sacrificial layer of material to a first surface of a semiconductor substrate; subsequently, removing a first radius of a first depth of material from the semiconductor substrate along a direction normal to the first surface, the removal of the first depth of material uses a first removal technique that removes the first depth of material; and removing a second radius of a second depth of material from the semiconductor substrate along the direction normal to the first surface based on the removal of the first depth of material, the removal of the second depth of material uses a second removal technique.

A system and method for fabricating an orifice in a multi-layered semiconductor substrate and singulation of the semiconductor substrate includes adding a sacrificial layer of material to a first surface of a semiconductor substrate; subsequently, removing a first radius of a first depth of material from the semiconductor substrate along a direction normal to the first surface, the removal of the first depth of material uses a first removal technique that removes the first depth of material; and removing a second radius of a second depth of material from the semiconductor substrate along the direction normal to the first surface based on the removal of the first depth of material, the removal of the second depth of material uses a second removal technique.