Provided is a laser processing method for drilling a hole in a glass substrate with using a carbon dioxide laser, including the steps of: irradiating the laser onto a drilling position on the glass substrate from a side of the glass substrate on which a protective sheet is adhered so as to form a blind hole; removing the protective sheet from the glass substrate and performing an annealing treatment; and performing a wet-etching process on a side of the glass substrate not irradiated with the laser so as to convert the blind hole into a through hole.

Exemplary methods of fabricating a faceplate for a processing chamber may include drilling a first portion of each of a plurality of apertures in a first surface of a faceplate. Each first portion may extend at least partially through a thickness of the faceplate. The methods may include detecting a center of each first portion using a laser drilling apparatus. The methods may include drilling a diffuser portion in each of the plurality of apertures using the laser drilling apparatus. Each diffuser portion is centered with respect to a respective one of the first portions.

Exemplary methods of fabricating a faceplate for a processing chamber may include drilling a first portion of each of a plurality of apertures in a first surface of a faceplate. Each first portion may extend at least partially through a thickness of the faceplate. The methods may include detecting a center of each first portion using a laser drilling apparatus. The methods may include drilling a diffuser portion in each of the plurality of apertures using the laser drilling apparatus. Each diffuser portion is centered with respect to a respective one of the first portions.

Provided is a femtosecond laser system for processing a micro-hole array, comprising: a femtosecond laser, a half-wave plate, a polarizer, a concave lens, a convex lens, a diaphragm, a mechanical shutter, a phase-type spatial light modulator, a first plano-convex lens, a reflecting mirror, a second plano-convex lens, a dichroic mirror, a camera, a processing objective lens, a six-axis translation stage and a transmissive white light source.

The disclosure relates to systems and methods for machine-cutting workpieces in plate form or bar form and also to a machine tool, with a laser machining device, and a workpiece support, by which a workpiece to be machined in the laser machining device is received, and with a workpiece moving device, by which the workpiece to be machined is held and moved in relation to the laser machining device, wherein with a machining head a laser beam is directed onto the workpiece to be machined and a clearance or recess is introduced into the workpiece and the clearance is machined with a flow drill and widened to a final size of a borehole.

The disclosure relates to systems and methods for machine-cutting workpieces in plate form or bar form and also to a machine tool, with a laser machining device, and a workpiece support, by which a workpiece to be machined in the laser machining device is received, and with a workpiece moving device, by which the workpiece to be machined is held and moved in relation to the laser machining device, wherein with a machining head a laser beam is directed onto the workpiece to be machined and a clearance or recess is introduced into the workpiece and the clearance is machined with a flow drill and widened to a final size of a borehole.

A glass panel processing method includes a first deformed portion formation step in which, in order to form a via-hole in a glass substrate, a first deformed portion is formed to a first depth from the upper surface of the glass substrate through irradiation with a laser beam along a planned via-hole line, a second deformed portion formation step in which, in order to cut the glass substrate into unit cells, a second deformed portion is formed to a second depth in the glass substrate through irradiation with a laser beam along a planned cutting line, and an etching step in which, the glass substrate with the first deformed portion and the second deformed portion formed therein is etched such that etching of the glass substrate along the planned cutting line is completed before completion of etching of the glass substrate along the planned via-hole line.

An elastic film has a perforation formed by perforation holes that are elongated along a preferred expanding direction in the unexpanded state, wherein the ratio of the length of the perforation holes determined along the preferred expanding direction to a width of the perforation holes determined perpendicular thereto amounts to at least 3:2. The elongation at break along the preferred expanding direction is at least twice as high as the elongation at break determined perpendicular thereto along the width of the perforation holes.

A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).