There is provided a conductive particle including a core particle containing a resin material, and a surface layer that covers a surface of the core particle and contains a solder material, in which a melting point of the solder material is equal to or lower than a softening point of the resin material.

To provide a solder material capable of performing soldering with high reliability while suppressing materials other than a solder metal to remain inside the solder after the soldering. Coil-shaped carbons are heated by electromagnetic waves by using a solder material in which coil-shaped carbons of 0.5 weight % to 1.5 weight % with respect to a weight of a solder paste are mixed, thereby performing soldering by heating the solder material itself.

Embodiments describe high aspect ratio and fine pitch interconnects for a semiconductor package, such as a package-on-package structure. In an embodiment, the interconnects are formed with a no-slump solder paste. In an embodiment, the no-slump solder paste is printed in an uncured state, and is then cured with a liquid phase sintering process. After being cured, the no-slump solder paste will not reflow at typical processing temperatures, such as those below approximately 400° C. According to embodiments, the no-slump solder paste includes Cu particles or spheres, a solder matrix component, a polymeric delivery vehicle, and a solvent. In an embodiment, the liquid phase sintering produces a shell of intermetallic compounds around the Cu spheres. In an embodiment, the sintering process builds a conductive metallic network through the no-slump solder paste.

Provided are a lead-free and antimony-free solder alloy which has a medium-low melting point and ensures solderability even after being held at a high temperature for a long time, a solder ball, a ball grid array, and a solder joint. The lead-free and antimony-free solder alloy has an alloy composition consisting of 12 to 23% by mass of In, and 0.001 to 0.08% by mass of Ge, with the balance being Sn and unavoidable impurities. Preferably, the alloy composition has 16 to 21% by mass of In; the alloy composition has 0.005 to 0.01% by mass of Ge; the alloy composition has 0.005 to 0.009% by mass of Ge; U and Th as the unavoidable impurities are each included in an amount of 5 mass ppb or less; and As and Pb as the unavoidable impurities are each included in an amount of 5 mass ppm or less.

There is provided a solder alloy in which 0.5 mass % or more and 1.25 mass % or less of Sb, In satisfying the following formula (I) or (II) when [Sb] is set as a Sb content percentage (mass %) and [In] is set as an In content percentage (mass %): in a case of 0.5≦[Sb]≦1.0, 5.5≦[In]≦5.50+1.06[Sb] . . . (I), in a case of 1.0<[Sb]≦1.25, 5.5≦[In]≦6.35+0.212[Sb] . . . (II) (in the formula, [Sb] indicates a Sb content percentage (mass %) and [In] indicates an In content percentage (mass %)), 0.5 mass % or more and 1.2 mass % or less of Cu, 0.1 mass % or more and 3.0 mass % or less of Bi, 1.0 mass % or more and 4.0 mass % or less of Ag, and 0 mass % or more and 0.025 mass % or less of Co are contained, and has the remainder consisting essentially of Sn.

A sheet-shaped solder that is not susceptible to electromigration, and a solder joint part and semiconductor device using the same are provided. A pressed sheet-shaped solder containing a solder alloy containing Sn as a primary component, an additional element, and an incidental impurity is provided. A pressed surface of the sheet-shaped solder is a surface perpendicular to a main surface of the sheet-shaped solder, and c-axes of Sn crystals are aligned in a direction perpendicular to a thickness direction of the sheet-shaped solder. Moreover, a solder joint part including a semiconductor element, and an electrically conductive connection member, and a solder joining layer being the above sheet-shaped solder melted between the semiconductor element and the electrically conductive connection member is provided.

Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.

A solder alloy includes 1.1% by mass or more and 8% by mass or less of Cu; 6% by mass or more and 20% by mass or less of Sb; 0.01% by mass or more and 0.5% by mass or less of Ni; and 0.001% by mass or more and 1% by mass or less of Co; a balance being Sn. An amount of Cu (% by mass) and an amount of Ni (% by mass) satisfies following formula: the amount of Ni/(the amount of Cu+the amount of Ni)<0.10.

A core material has a core; a solder layer provided outside the core and being a solder alloy containing Sn and at least any one element of Ag, Cu, Sb, Ni, Co, Ge, Ga, Fe, Al, In, Cd, Zn, Pb, Au, P, S, Si, Ti, Mg, Pd, and Pt; and a Sn layer provided outside the solder layer. The solder layer has a thickness of 1 μm or more on one side. The Sn layer has a thickness of 0.1 μm or more on one side. A thickness of the Sn layer is 0.215% or more and 36% or less of the thickness of the solder layer.

Provided is a solder material having oxidation resistance at the time of melting solder or after melting it, as well as managing a thickness of oxide film at a fixed value or less before melting the solder. A Cu core ball 1A is provided with a Cu ball 2A for keeping a space between a semiconductor package and a printed circuit board and a solder layer 3A that covers the Cu ball 2A. The solder layer 3A is composed of Sn or a solder alloy whose main component is Sn. For the Cu core ball 1A, lightness is equal to or more than 65 in the L*a*b* color space and yellowness is equal to or less than 7.0 in the L*a*b* color space, and more preferably, the lightness is equal to or more than 70 and the yellowness thereof is equal to or less than 5.1.