The present invention provides a coated solder material that is capable of preventing the advancement of oxidation of the surface during long-term storage and when melted, and that has excellent wetting extendability and bondability, without the occurrence of gaps in the bonded areas. A coating film is formed on the surface of a solder material; the coating film including a carbon compound that is formed by introducing an organic compound having a carbon number of 8 or less together with a carrier gas into a reaction gas that has been plasmatized under atmospheric pressure, and after a radicalized organic compound has been formed by radicalizing the organic compound, causing the radicalized organic compound to react with the metal on the surface of the solder material; the thickness of the coating film is 4 nm to 200 nm, and when heated at 150 C. to 300 C. and melted, the mass-reduction rate is 60% or greater.

A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.

Method and apparatus for establishing an electrical interconnection between an electrical lead and a printed circuit board (PCB), such as a PCB used in a data storage device. In some embodiments, the PCB includes a multi-layer substrate having at least one conductive layer and at least one electrically insulative layer. An electrically conductive pad is provided on a facing surface of the substrate in electrical communication with the at least one conductive layer. A flux reservoir is placed adjacent the pad which extends from the facing surface into the substrate. A solder mask layer is provided on the facing surface of the base structure which surrounds the pad and extends into the reservoir. The solder mask layer and reservoir collect liquid flux from a soldering operation used to form a solder joint between the pad and a conductive lead of an electronic component.

A semiconductor package includes a first substrate, a second substrate, a composite solder ball and a first semiconductor component. The composite solder ball includes a core, an encapsulating layer and a barrier layer. The composite solder ball is disposed between the first substrate and the second substrate for electrically connecting the first substrate and the second substrate. The barrier layer is disposed between the core and the encapsulating layer. Wherein a melting point of the barrier layer is higher than a melting point of the core, the melting point of the core is higher than a melting point of the encapsulating layer. The first semiconductor component is disposed between the first substrate and the second substrate.

Some implementations of the disclosure are directed to low melting temperature (e.g., liquidus temperature below 210 C.) SnIn solder alloys. A SnIn solder alloy may consist of: 8 to 20 wt % In; greater than 0 wt % to 4 wt % Ag; optionally, one or more of greater than 0 wt % to 5 wt % Sb, greater than 0 wt % to 3 wt % Cu, greater than 0 wt % to 2.5 wt % Zn, greater than 0 wt % to 1.5 wt % Ni, greater than 0 wt % to 1.5 wt % Co, greater than 0 wt % to 1.5 wt % Ge, greater than 0 wt % to 1.5 wt % P, and greater than 0 wt % to 1.5 wt % Mn; and a remainder of Sn.

An electronic apparatus includes a first electronic part with a first terminal, a second electronic part with a second terminal opposite the first terminal, and a joining portion which joins the first terminal and the second terminal. The joining portion contains a pole-like compound extending in a direction in which the first terminal and the second terminal are opposite to each other. The joining portion contains the pole-like compound, so the strength of the joining portion is improved. When the first terminal and the second terminal are joined, the temperature of one of the first electronic part and the second electronic part is made higher than that of the other. A joining material is cooled and solidified in this state. By doing so, the pole-like compound is formed.

Embodiments herein may relate to a patch on interposer (PoINT) architecture. In embodiments, the PoINT architecture may include a plurality of solder joints between a patch and an interposer. The solder joints may include a relatively high temperature solder ball and a relatively low temperature solder paste that at least partially surrounds the solder ball. Other embodiments may be described and/or claimed.

Undercooled liquid metallic core-shell particles, whose core is stable against solidification at ambient conditions, i.e. under near ambient temperature and pressure conditions, are used to join or repair metallic non-particulate components. The undercooled-shell particles in the form of nano-size or micro-size particles comprise an undercooled stable liquid metallic core encapsulated inside an outer shell, which can comprise an oxide or other stabilizer shell typically formed in-situ on the undercooled liquid metallic core. The shell is ruptured to release the liquid phase core material to join or repair a component(s).

A low melting-point bonding member includes a low melting-point alloy containing Bi: 46 mass % or more and 72 mass % or less, In: 26 mass % or more and 54 mass % or less, and Sn: 2 mass % or less when a total amount of Bi, In, and Sn is 100 mass % and having a melting point of 86 to 111 C. A method for producing a low melting-point bonding member, including a plating step of performing a plating process including at least Bi plating and In plating and forming, on an object to be plated, a plating layer containing Bi: 46 mass % or more and 72 mass % or less, In: 26 mass % or more and 54 mass % or less, and Sn: 2 mass % or less when a total amount of Bi, In, and Sn is 100 mass %.

A solder wire composition may include 85 to 95 weight percent bismuth, and at least 5 weight percent copper. The solder wire composition may have a diameter of less than about 1 millimeter, and an elongation at break of at least 20%.