A method of producing a carrier for use in a double-side polishing apparatus, the method including engaging an insert with a holding hole formed in a carrier body and sticking the insert to the holding hole, the carrier body being configured to be disposed between upper and lower turn tables to which polishing pads are attached of the double-side polishing apparatus, the holding hole being configured to hold a wafer during polishing, the insert being configured to contact an edge of the wafer to be held, the method including: performing a lapping process and a polishing process on the insert; engaging the insert subjected to the lapping process and the polishing process with the holding hole of the carrier body; and sticking and drying the engaged insert while applying a load to the insert in a direction perpendicular to main surfaces of the carrier body.

A textured glass-based article with multiple haze levels is provided. The textured glass-based articles are produced by utilizing a combination of etching and mechanical polishing to produce the multiple haze levels.

An electronic device may have a glass housing structures. The glass housing structures may be used to cover a display and other internal electronic device components. The glass housing structure may have multiple glass pieces that are joined using a glass fusing process. A peripheral glass member may be fused along the edge of a planar glass member to enhance the thickness of the edge. A rounded edge feature may be formed by machining the thickened edge. Raised fused glass features may surround openings in the planar glass member. Multiple planar glass members may be fused together to form a five-sided box in which electronic components may be mounted. Raised support structure ribs may be formed by fusing glass structures to a planar glass member. Opaque masking material and colored glass may be used to create portions of the glass housing structures that hide internal device components from view.

A method of polishing a target surface of a waveguide to achieve perpendicularity relative to a reference surface is disclosed. The method includes i) providing a polishing apparatus having a polishing plate with a flat surface defining a reference plane, and an adjustable mounting apparatus configured to hold the waveguide during polishing at a plurality of angular orientations; ii) positioning an optical alignment sensor and a light reflecting apparatus such that a first collimated light beam is reflected off of a surface parallel to the reference plane, and a second perpendicular collimated light beam is reflected off of the reference surface; iii) aligning the waveguide within the polishing apparatus such that the reflections received by the optical alignment sensor align within the optical alignment sensor, thereby being indicative of perpendicularity between the reference plane and the reference surface; and iv) polishing the target surface of the aligned waveguide.

A wafer grinding method includes a step of holding a wafer on a holding surface of a chuck table, a first grinding step of controlling a grinding feeding mechanism by a control unit so as to increase or decrease a load value measured by a load measuring unit and grinding the wafer to a thickness not reaching a predetermined finished thickness of the wafer, and a second grinding step of imparting a preset load value and grinding the wafer until the predetermined finished thickness is reached, after the first grinding step.

Letting a particle diameter be Dx (μm) when a cumulative particle volume cumulated from the small particle diameter side reaches x (%) of the total particle volume in a particle size distribution obtained regarding cerium oxide included in a polishing liquid using a laser diffraction/scattering method, D5 is 1 μm or less, and a difference between D95 and D5 is 3 μm or more.

A glass manufacturing apparatus includes a support configured to hold a glass including a first flat portion, a second flat portion, and a curved portion connecting one side of the first flat portion and one side of the second flat portion. The support includes a first flat surface supporting the first flat portion, a second flat surface facing the first flat surface and supporting the second flat portion, and a curved surface connecting the flat surface to the second flat surface and supporting the curved portion.

Letting a particle diameter be Dx (μm) when a cumulative particle volume cumulated from the small particle diameter side reaches x (%) of the total particle volume in a particle size distribution obtained regarding cerium oxide included in a polishing liquid using a laser diffraction/scattering method, D5 is 1 μm or less, and a difference between D95 and D5 is 3 μm or more.

Letting a particle diameter be Dx (μm) when a cumulative particle volume cumulated from the small particle diameter side reaches x (%) of the total particle volume in a particle size distribution obtained regarding cerium oxide included in a polishing liquid using a laser diffraction/scattering method, D5 is 1 μm or less, D100 is 3 μm or more, D50 is 0.8 to 2.4 μm, and Dpeak−D5 is less than D95−Dpeak.

A grinding and/or polishing machine (10) for slabs of stone material, such as natural or agglomerated stone, ceramic or glass, comprises a support bench (12) for the slabs to be machined and at least one machining station (14) with a pair of bridge-like support structures (16, 18) arranged opposite each other with, above, a beam supporting a plurality of machining spindles (26). First relative movement means (19) move the slab in a longitudinal direction with respect to the machining station (14), while the beam moves transversely with respect to its length by means of second movement means (21). Each spindle is supported on the beam so that it can be swivelled by associated movement means (34, 35, 40, 50, 60) about an oscillation axis (33) which is parallel to, but separate from the motorized vertical axis (32) of the spindle. The spindles thus oscillate about the respective oscillation axes (33) in cooperation with the longitudinal and transverse movements, respectively, of the first and second movement means (19 and 21) so as to polish and/or grind the surface of a slab on the support bench.