B24B37/105

RETAINING RING FOR USE IN CHEMICAL MECHANICAL POLISHING AND CMP APPARATUS HAVING THE SAME
20210086324 · 2021-03-25 ·

The present disclosure provides a retaining ring for polishing a wafer by a slurry. The retaining ring includes a ring-shaped main body and a plurality of guiding elements. The main body has an outer surface, an inner surface, and an inner space for accommodating the wafer. The main body includes a plurality of channels configured to allow the slurry to flow into the inner space from the outer surface. The plurality of guiding elements is disposed at the outer surface of the main body with respect to the plurality of channels. Each of the guiding elements forms a slurry capture area with the main body to guide the slurry towards each of the respective channels.

Dressing apparatus and dressing method for substrate rear surface polishing member

A dressing apparatus 200 includes a bus member 203 which is equipped with a ceiling plate 201 and a circular or polygonal cylindrical skirt portion 202 provided at a bottom surface of the ceiling plate 201 and which is configured to accommodate a polishing pad 131 from thereabove. The bus member 203 includes a dual fluid nozzle 204 configured to jet a cleaning liquid and a gas onto a polishing surface of the polishing pad 131; a dress board 205 configured to come into contact with the polishing surface of the polishing pad 131; and a rinse nozzle 206 configured to supply a rinse liquid onto a contact surface between the polishing surface of the polishing pad 131 and the dress board 205. A cleaning liquid, a fragment of a grindstone or a sludge is suppressed from being scattered around by the skirt portion 202.

Magnetic slurry for highly efficient CMP

A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

MEGA-SONIC VIBRATION ASSISTED CHEMICAL MECHANICAL PLANARIZATION

A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

SUBSTRATE PROCESSING APPARATUS AND PROCESSING METHOD

A polishing apparatus is provided. The polishing apparatus includes: a polishing unit configured to polish a substrate by bringing a polishing tool into contact with the substrate and moving the substrate relatively to the polishing tool; a cleaning unit; and a first transfer robot configured to transfer the substrate before polishing to the polishing unit and/or configured to transfer the substrate after polishing from the polishing unit to the cleaning unit. The cleaning unit includes: at least one cleaning module, a buff processing module configured to perform a buff process to the substrate, and a second transfer robot configured to transfer the substrate between the cleaning module and the buff processing module, the second transfer robot being different from the first robot.

CHEMICAL MECHANICAL POLISHING APPARATUS, CHEMICAL MECHANICAL POLISHING METHOD AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME

A method of manufacturing a display and a chemical mechanical polishing method which employ a chemical mechanical polishing apparatus that includes a conveyor belt to transfer a substrate, a polishing head disposed on the conveyor belt, and a body part which moves the polishing head and supplies a slurry to the polishing head. The polishing head includes a first polishing part including a first polishing pad surrounding a first slurry outlet, and a second polishing part surrounding the first polishing part and including a second polishing pad. A second slurry outlet is formed between the first polishing part and the second polishing part, and the first polishing part and the second polishing part are movable independently of each other in a direction substantially perpendicular to the substrate.

Method of semiconductor manufacturing apparatus and non-transitory computer-readable storage medium storing a program of causing computer to execute design method of semiconductor manufacturing apparatus

A design method of a semiconductor manufacturing apparatus which can satisfy a specification required by a user is disclosed. The design method of the semiconductor manufacturing apparatus includes creating a program setting file; creating a program installer from the program setting file; operating a processing unit of the semiconductor manufacturing apparatus; specifying a sensor corresponding to the processing unit based on the operation of the processing unit; creating a sensor setting file storing information obtained by specifying the sensor; comparing a content of a requirement specification and a content of the sensor setting file to confirm a consistency between the content of the requirement specification and the content of the sensor setting file; and introducing a program into a memory of a controller by the program installer when the content of the requirement specification and the content of the sensor setting file are consistent with each other.

Apparatus and method for timed dispensing various slurry components

A slurry dispensing unit for a chemical mechanical polishing (CMP) apparatus is provided. The slurry dispensing unit includes a nozzle, a mixer, a first fluid source, and a second fluid source. The nozzle is configured to dispense a slurry. The mixer is disposed upstream of the nozzle. The first fluid source is connected to the mixer through a first pipe and configured to provide a first fluid including a first component of the slurry. The second fluid source is connected to the mixer through a second pipe and configured to provide a second fluid including a second component of the slurry, wherein the second component is different from the first component.

Apparatus for chemical-mechanical polishing

An apparatus for chemical-mechanical polishing is provided, including: a plurality of polishing sections spaced apart from one another, each polishing section including: a bracket, a carrier head and a platen, the carrier head being disposed on the bracket and configured to move between a polishing position and a conveying position, in which when the carrier head is located at the polishing position, the carrier head is located above the platen; and a conveying assembly, the conveying assembly including: a rotating plate and a plurality of loading and unloading tables, the plurality of loading and unloading tables being spaced apart from one another, disposed on the rotating plate and configured to rotate along with the rotating plate, in which when the carrier head is located at the conveying position, the carrier head is corresponding to one of the plurality of loading and unloading tables.

Method and equipment for performing CMP process

A chemical-mechanical planarization device and a method for using a chemical-mechanical planarization device in conjunction with a semiconductor substrate is provided. In accordance with some embodiments, the device includes: a pad disposed over a rotatable platen; a carrier head disposed over the pad and configured to retain a semiconductor substrate between the pad and the carrier head; a tank configured to retain a liquid containing composition; at least one tube fluidly coupled with the tank, the at least one tube comprising a photocatalyst therein; a nozzle fluidly coupled with the tank through the at least one tube and configured to supply the liquid containing composition onto the pad; and a light source configured to provide light to irradiate the photocatalyst, and the liquid containing composition passing through the at least one tube.