Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

Interrupted structured abrasive articles comprise an abrasive layer comprising shaped abrasive composites that extend outwardly from a first major surface of a backing to which they are secured. The abrasive layer defines at least one open region that is free of the shaped abrasive composites and may extend partially or completely through the backing. In some embodiments, each of the open regions comprises a circular area of at least 1.5 square centimeters, and when combined the open regions have total area that is at least 10 percent of the area of the first major surface of the backing. Interrupted abrasive articles are useful in single-sided polishing processes.

A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.

A method of fabricating a polishing layer of a polishing pad includes determining a desired distribution of particles to be embedded within a polymer matrix of the polishing layer. A plurality of layers of the polymer matrix is successively deposited with a 3D printer, each layer of the plurality of layers of polymer matrix being deposited by ejecting a polymer matrix precursor from a nozzle. A plurality of layers of the particles is successively deposited according to the desired distribution with the 3D printer. The polymer matrix precursor is solidified into a polymer matrix having the particles embedded in the desired distribution.

Magnetic sample holders for abrasive operations include an array of magnets embedded in a matrix material. Each magnet of the array is positioned between about 0 mm and about 4 mm from at least one adjacent magnet of the array. Exposed surfaces of the magnets of the array are coplanar with a planar working surface of the matrix material. Methods of forming a polycrystalline diamond compact element include magnetically securing an alloy sample to an array of magnets embedded in a matrix. Each of the magnets of the array is within about 4 mm of at least one adjacent magnet of the array. A portion of the alloy sample is abraded away, and the alloy sample is positioned proximate to diamond grains and a substrate. The alloy sample, diamond grains, and substrate are subjected to a high pressure/high temperature process to sinter the diamond grains.

CMP processes, tools and slurries utilize metal oxide-polymer composite particles that include metal oxide particles and a polymer core. The metal oxide particles are modified with a modifying agent and are partially or fully embedded within the polymer core. Using these processes, tools and slurries can enhance removal rates, reduce defectivity and increase cleanability with respect to comparable systems and substrates.

An abrasive element precursor includes a green body ceramic element having a first major surface, a second major surface, a plurality of inorganic particles, and a binder. At least the first major surface comprises a plurality of precisely shaped features. The plurality of inorganic particles is at least about 99% carbide ceramic by weight.

A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.

A method of additive manufacturing includes dispensing successive layers of feed material to form a polishing pad, and directing first and second radiation beams toward the layers of feed material to form a polishing pad. Dispensing each successive layer of the layers of feed material includes dispensing a drop of feed material, and directing the first and second radiation beams toward the layers of feed material includes, for each successive layer, directing the first radiation beam toward the drop of feed material to cure an exterior surface of the drop of feed material, and directing the second radiation beam toward the drop of feed material to cure an interior volume of the drop of feed material.

An additive manufacturing apparatus for forming a polishing pad for chemical mechanical polishing includes a platform, an actuator system coupled to the platform to adjust a tilt of the platform, one or more printheads supported above the platform, the one or more printheads configured to dispense successive layers of feed material on the platform to be form the polishing pad, a sensing system to detect a height of a surface on or above the platform at each of a plurality of horizontally spaced points, and a controller configured to selectively operate the actuator system to adjust the tilt of the platform based on the detected height of the platform at each of the points such that the surface is moved closer to horizontal.