Grind discs for semiconductor polishing systems are provided. In one example, a semiconductor workpiece polishing system includes a platen configured to rotate about an axis. The semiconductor workpiece polishing system further includes a grind disc on the platen, the grind disc has an abrasive surface configured to grind silicon carbide. The semiconductor workpiece polishing system includes a workpiece carrier operable to bring a silicon carbide semiconductor workpiece into contact with the grind disc to implement a grinding operation on the silicon carbide semiconductor workpiece. The grinding operation reduces a thickness of the silicon carbide semiconductor workpiece by at least about 0.5 microns.

Systems and methods for polishing semiconductor workpieces are provided. In one example, the polishing system includes a platen operable to rotate about an axis. The polishing system further includes a polishing pad on the platen. The polishing system further includes a workpiece carrier operable to bring a semiconductor workpiece into contact with the polishing pad. The polishing pad includes a first zone and a second zone.

A polishing pad having a window extending through the polishing pad from the polishing surface to a backside surface of the pad. The window includes a top window material separated from a polishing material, a bottom window wherein the bottom window material is elastomeric and can deform into a void space adjacent to the bottom window material when the pad is under pressure during polishing. A seal between the subpad material and the top window material and/or bottom window material or a seal between the polishing layer and the bottom window material prevents particles or liquid used in the chemical mechanical polishing from passing from above the polishing layer to below the subpad layer. The pad can be used for polishing with either optical or vibrational end-point detection.

An example polishing system, such as an electrochemical mechanical polishing (ECMP) system, includes a polishing pad assembly having a polishing pad. The example polishing system includes a bias source. The example polishing system includes a workpiece carrier operable to bring the semiconductor workpiece into contact with the polishing pad. In some implementations, the polishing pad assembly is operable to provide an electrically conductive path for one or more charge carriers to the bias source.

A chemical mechanical polishing (CMP) polishing pad includes a base layer, a polishing layer on the base layer and having a concave-convex pattern shape, and a coating layer on the polishing layer and comprising diamond particles.

Systems and methods for polishing semiconductor workpieces are provided. In one example, the polishing system includes a platen operable to rotate about an axis. The polishing system further includes a polishing pad on the platen. The polishing system further includes a workpiece carrier operable to bring a semiconductor workpiece into contact with the polishing pad. The polishing pad includes a first zone and a second zone.

Systems and methods for polishing semiconductor workpieces are provided. In one example, the polishing system includes a platen operable to rotate about an axis. The polishing system further includes a polishing pad on the platen. The polishing system further includes a workpiece carrier operable to bring a semiconductor workpiece into contact with the polishing pad. The polishing pad includes a first zone and a second zone.

An abrasive article can include a body including agglomerated first abrasive particles and unagglomerated second abrasive particles contained in a bond material. The first abrasive particles can include chromium oxide. The second abrasive particles can include elongated abrasive particles. The bond material can include an inorganic material including a vitreous phase.