An additive manufacturing apparatus includes a platform, a plurality of printheads supported above the platform and configured to dispense successive layers of feed material on a top surface of the platform, the layers of feed material to be formed into a polishing pad, an optical sensor to monitor a dispensing operation of a first printhead of the plurality of printheads, and a controller configured to detect an error condition associated with the first printhead based on monitoring the dispensing operation of the first printhead while operating the printheads to successively dispense the layers of feed material, and adjust a dispensing operation of a second printhead of the plurality of printheads in response to detecting the error condition.

A lapping device is provided that is capable of precisely lapping a surface of an object having a complicated shape, the lapping device including a driving unit, a shank connected to the driving unit through a driving shaft, and a lapping portion coupled to the shank. The lapping portion includes an abrasive layer and an elastic member between the abrasive layer and the shank.

A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

The present invention relates to a polishing pad with improved slurry retention capacity, which includes a polishing layer. The polishing layer includes an elastomer main body and a plurality of titanium dioxide nanowires. Each of the titanium dioxide nanowires is independent and is distributed evenly and randomly in the elastomer main body. The present invention further provides a polishing apparatus and a method for manufacturing the polishing pad.

The present disclosure relates to polishing pads which include a polishing layer, wherein the polishing layer includes a working surface and a second surface opposite the working surface. The working surface includes a plurality of precisely shaped pores, a plurality of precisely shaped asperities and a land region. The present disclosure further relates to a polishing system, the polishing system includes the preceding polishing pad and a polishing solution. The present disclosure relates to a method of polishing a substrate, the method of polishing including: providing a polishing pad according to any one of the previous polishing pads; providing a substrate, contacting the working surface of the polishing pad with the substrate surface, moving the polishing pad and the substrate relative to one another while maintaining contact between the working surface of the polishing pad and the substrate surface, wherein polishing is conducted in the presence of a polishing solution.

The present disclosure relates to polishing pads which include a polishing layer, wherein the polishing layer includes a working surface and a second surface opposite the working surface. The working surface includes at least one of a plurality of precisely shaped pores and a plurality of precisely shaped asperities. The present disclosure further relates to a polishing system, the polishing system includes the preceding polishing pad and a polishing solution. The present disclosure relates to a method of polishing a substrate, the method of polishing including: providing a polishing pad according to any one of the previous polishing pads; providing a substrate, contacting the working surface of the polishing pad with the substrate surface, moving the polishing pad and the substrate relative to one another while maintaining contact between the working surface of the polishing pad and the substrate surface, wherein polishing is conducted in the presence of a polishing solution.

A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.

Embodiments of the disclosure generally provides a method and apparatus for a polishing article or polishing pad having a microstructure that facilitates uniform conditioning when exposed to laser energy. In one embodiment, a polishing pad comprising a combination of a first material and a second material is provided, and the first material is more reactive to laser energy than the second material. In another embodiment, a method of texturing a composite polishing pad is provided. The method includes directing a laser energy source onto a surface of the polishing pad to affect a greater ablation rate within a first material having a greater laser absorption rate and a lesser ablation rate within a second material having a lesser laser absorption rate to provide a micro-textured surface consistent with microstructure of the composite polishing pad.

A superfine abrasive biomacromolecule flexible polishing film and a preparation method therefor, include a substrate of the polishing film made of a degradable biomacromolecule material, the mechanical performance of the polishing film is enhanced by means of selected filling agents, water carrying agents, pore forming agents and other drying control chemical additives, and superfine abrasives can be evenly dispersed and effectively held in the polishing film by using a coupling agent surface chemical modification method.

A method, for manufacturing a silicon carbide semiconductor device, includes: forming a silicon carbide epitaxial film on a silicon carbide substrate; flattening a surface of the epitaxial film by using chemical mechanical polishing such that the surface of the epitaxial film has an arithmetic mean roughness Ra of 0.3 nm or less; thermally oxidizing the surface of the epitaxial film to form a sacrificial oxide; removing the sacrificial oxide; and cleaning, by using deionized water, a surface of the epitaxial film exposed by the removing of the sacrificial oxide.