The invention relates to obtaining an abrasive product comprising a surface with multiple abrasive zones supported by a backing layer. The abrasive zone are surrounded by interconnected channel portions comprising first channel portions with a first transverse dimension td1 and second channel portions with a second transverse dimension td2 larger than the first transverse dimension td1.

A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.

Problem: To provide an abrasive pad and abrading method using same that are capable of extending the life of the abrasive pad when applied to abrading the surface of glass substrates, and that can ensure abrading capability that is appropriate for abrading the surface of glass substrates. Resolution Means: An abrasive pad used for abrading the surface of a glass substrate, that includes a base material layer, and an abrasive layer provided on one side of the base material layer, the abrasive layer including a plurality of pillar shaped abrading portions arranged separated from each other on the base material layer, the abrading portions being made from abrasive material that includes polishing abrasive particles, a filler, and a binder resin, the polishing abrasive particles including abrasive particles and a glass matrix, and the filler including a first filler that fractures or drops out when the surface is being abraded, forming approximately spherical crown shaped recesses in the top face of the abrading portions.

Interrupted structured abrasive articles comprise an abrasive layer comprising shaped abrasive composites that extend outwardly from a first major surface of a backing to which they are secured. The abrasive layer defines at least one open region that is free of the shaped abrasive composites and may extend partially or completely through the backing. In some embodiments, each of the open regions comprises a circular area of at least 1.5 square centimeters, and when combined the open regions have total area that is at least 10 percent of the area of the first major surface of the backing. Interrupted abrasive articles are useful in single-sided polishing processes.

An abrasive composition including a substrate with perforations. The perforations may have curved edges and different shapes. Abrasive particles to be brazed to the substrate are sprinkled over the molten braze on the surface of the substrate, including on the curved edges of the perforations. The perforations provide a view of the work surface for the user and reduce noise, and also provide places for work surface debris to collect for later removal. The shape of the substrate itself may include particular surface areas intended for specific abrasion tasks, such as flat surfaces with different grades of abrasive particles and small radius edges for use as a cutting tool.

A method of polishing comprises providing a substrate to be planarized, providing a chemical mechanical polishing pad having a polishing layer comprising a polyurethane and 1 to 20 wt % based on total weight of the polishing layer of non-reactive, non-expandable polymeric particles dispersed in the polyurethane and less than 2 wt % expandable polymeric microspheres, conditioning the polishing layer to form a conditioned polishing layer, stopping the conditioning, polishing the substrate with the pad having the conditioned polishing layer, stopping the polishing, reconditioning the polishing layer to form a reconditioned polishing layer, stopping the reconditioning, and initiating additional polishing on the substrate or a second substrate.

A sheet of sandpaper includes a backing layer having opposed first and second major surfaces, an adhesive make coat on the first major surface, abrasive particles at least partially embedded in the make coat, thereby defining an abrasive surface, and a non-slip coating layer on the second major surface. Methods of making and using such sandpaper are also provided.

A buffing and polishing member has an uncompressed monolithic body of foam material having slits from an outside surface toward and less than a distance to a rotational axis of the body. The slits, on circumferential spaced planes, extend generally radially from the outside surface toward and less than a distance to the rotational axis to define a plurality of foam fingers and an unslit center portion. A fastening mechanism holds the center portion of the slit foam body in a compressed state along the rotational axis such that the uncompressed outer ends of the foam finger define a spherocylinder.

Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing. The producing of semiconductor wafers uses a fixed abrasive-grain processing device including a lower fixed abrasive-grain layer that is adjacent to the top surface of the lower surface-plate and that grinds the top surfaces of the plurality of semiconductor wafers; an upper fixed abrasive-grain layer that is adjacent to the bottom surface of the upper surface-plate and that grinds the bottom surfaces of the plurality of semiconductor wafers; a carrier plate that is horizontally interposed between the lower surface-plate and the upper surface-plate and that includes a plurality of holes each accommodating one of the plurality of semiconductor wafers; and a carrier rotating device that circularly moves the carrier plate, wherein the lower fixed abrasive-grain layer and the upper fixed abrasive-grain layer include fixed abrasive grain having a diameter of 4 m or less and being dispersed and fixed in elastic members.

A silicon polishing method and a silicon polishing composition that is to be used for the silicon polishing method. The silicon polishing method is for polishing a silicon wafer by using an abrasive-grain polishing pad that contains polishing abrasive grains while supplying the silicon polishing composition that does not contain the polishing abrasive grains. The silicon polishing composition contains an organic amine and a water. The silicon polishing composition has a pH of 10.6 to 12.8.