A curable composition comprises at least one cyclic olefin capable of undergoing ring opening metathesis polymerization; at least one ring opening metathesis polymerization catalyst or precursor catalyst thereof; abrasive particles having surface hydroxyl groups; and a difunctional coupling agent represented by the structure Z-X-Z (I). Each Z independently represents a group that is chemically reactive with at least one of the surface hydroxyl groups of one of the abrasive particles thereby forming at least one covalent bond. X represents a divalent organic linking group have a number average molecular weight of 500 to 10000 grams per mole.

Polishing articles and methods of manufacturing polishing articles used in polishing processes and cleaning processes are provided. More particularly, implementations disclosed herein relate to composite polishing articles having tunable properties such as hydrophilicity and zeta potential. 3D printed chemical-mechanical planarization (CMP) pads composed of UV curable acrylic chemistry are generally hydrophobic in nature. Such hydrophobic behavior affects the wetting properties with abrasive-based polishing slurries such as ceria-base slurries. However, in order to increase the planarization and removal rate while decreasing defects, hydrophilic pads are preferred. In addition, it is desirable that the zeta potential (Zp) of the pads be tunable over a wide range of conditions at different pH values. Implementations of the present disclosure include methods for increasing the hydrophilicity and tuning the Zp of the pads with anionic additives and pads produced using these methods.

A grinding tool includes a substrate, and at least an abrasive particle affixed to the substrate. The abrasive particle has a base, and four tips adjacent to one another protruding from the base, the base having a cavity of a generally cross shape extending between the four tips, the cavity including a material discharge surface disposed between two adjacent ones of the four tips, the material discharge surface being located at an end of the cavity and adjacent to a side surface of the base, an inner material angle between the material discharge surface and the side surface being between about 120 degrees and about 160 degrees. Moreover, embodiments described herein include a method of manufacturing the grinding tool.

An apparatus for chemical mechanical polishing includes a pad conditioner. The pad conditioner includes a first disk having a first surface and a second disk having a second surface. The first surface has a first plurality of abrasives with a first mean size and the second surface has a second plurality of abrasives with a second mean size greater than the first mean size.

Polishing articles and methods of manufacturing polishing articles used in polishing processes and cleaning processes are provided. More particularly, implementations disclosed herein relate to composite polishing articles having tunable properties such as hydrophilicity and zeta potential. 3D printed chemical-mechanical planarization (CMP) pads composed of UV curable acrylic chemistry are generally hydrophobic in nature. Such hydrophobic behavior affects the wetting properties with abrasive-based polishing slurries such as ceria-base slurries. However, in order to increase the planarization and removal rate while decreasing defects, hydrophilic pads are preferred. In addition, it is desirable that the zeta potential (Zp) of the pads be tunable over a wide range of conditions at different pH values. Implementations of the present disclosure include methods for increasing the hydrophilicity and tuning the Zp of the pads with anionic additives and pads produced using these methods.

In a method of polishing a silicon wafer, a final polishing step includes an upstream polishing step and a subsequent finish polishing step. In the upstream polishing step, as a polishing agent, a first alkaline aqueous solution containing abrasive grains with a density of 110.sup.14/cm.sup.3 or more is first supplied, and the supply is then switched to a supply of a second alkaline aqueous solution containing a water-soluble polymer and abrasive grains with a density of 510.sup.13/cm.sup.3 or less. In the finish polishing step, as a polishing agent, a third alkaline aqueous solution containing a water-soluble polymer and abrasive grains with a density of 510.sup.13/cm.sup.3 or less is supplied. Thus, the formation of not only PIDs but also scratches with small depth can be suppressed.

The present invention relates to a polishing pad that minimizes the occurrence of defects and a process for preparing the same, Since the polishing pad comprises fine hollow particles having shells, the glass transition temperature (Tg) of which is adjusted, the hardness of the shells and the shape of micropores on the surface of a polishing layer are controlled. Since the content of Si in the polishing layer is adjusted, it is possible to prevent the surface damage of a semiconductor substrate caused by hard additives. As a result, the polishing pad can provide a high polishing rate while minimizing the occurrence of defects such as scratches on the surface of a semiconductor substrate during the CMP process.

An abrasive article includes a first abrasive element, a second abrasive element, a resilient element having first and second major surfaces, and a carrier. The first element and the second abrasive element each comprises a first major surface and a second major surface. At least the first major surfaces of the first and second abrasive elements comprise a plurality of precisely shaped features. The abrasive elements comprise substantially inorganic, monolithic structures.

An abrasive article includes a first abrasive element, a second abrasive element, a resilient element having first and second major surfaces, and a carrier. The first element and the second abrasive element each comprises a first major surface and a second major surface. At least the first major surfaces of the first and second abrasive elements comprise a plurality of precisely shaped features. The abrasive elements comprise substantially inorganic, monolithic structures.

A stopper includes a head portion sized and configured to be coupled to an upper platen of a chemical-mechanical planarization system and a stopper leg sized and configured to direct a flow of liquid slurry applied to an upper planar surface of the upper platen substantially away from a lower surface of the upper platen.