A method of fabricating a chemical mechanical polishing pad includes introducing polymer precursors containing acrylate functional groups into a mold, providing abrasive particles and a photo-initiator in the polymer precursors to form a mixture, and while the mixture is contained between a bottom plate and a top cover of the mold, exposing the mixture to ultraviolet radiation through a transparent section of the mold to cause the polymer precursors to form radicals, forming a polymer matrix from the polymer precursor by causing the radicals to cross-link with one another. The polishing layer includes the polymer matrix having the abrasive particles dispersed therein.

A method of fabricating a chemical mechanical polishing pad includes introducing polymer precursors containing acrylate functional groups into a mold, providing abrasive particles and a photo-initiator in the polymer precursors to form a mixture, and while the mixture is contained between a bottom plate and a top cover of the mold, exposing the mixture to ultraviolet radiation through a transparent section of the mold to cause the polymer precursors to form radicals, forming a polymer matrix from the polymer precursor by causing the radicals to cross-link with one another. The polishing layer includes the polymer matrix having the abrasive particles dispersed therein.

A superhard polycrystalline construction comprises a body of polycrystalline superhard material comprising a structure comprising superhard material, the structure having porosity greater than 20% by volume and up to around 80% by volume. A method of forming such a superhard polycrystalline construction comprises forming a skeleton structure of a first material having a plurality of voids, at least partially filling some or all of the voids with a second material to form a pre-sinter assembly, and treating the pre-sinter assembly to sinter together grains of superhard material to form a body of polycrystalline superhard material comprising a first region of superhard grains, and an interpenetrating second region; the second region being formed of the other of the first or second material that does not comprise the superhard grains; the superhard grains forming a sintered structure having a porosity greater than 20% by volume and up to around 80% by volume.

A superhard polycrystalline construction comprises a body of polycrystalline superhard material comprising a structure comprising superhard material, the structure having porosity greater than 20% by volume and up to around 80% by volume. A method of forming such a superhard polycrystalline construction comprises forming a skeleton structure of a first material having a plurality of voids, at least partially filling some or all of the voids with a second material to form a pre-sinter assembly, and treating the pre-sinter assembly to sinter together grains of superhard material to form a body of polycrystalline superhard material comprising a first region of superhard grains, and an interpenetrating second region; the second region being formed of the other of the first or second material that does not comprise the superhard grains; the superhard grains forming a sintered structure having a porosity greater than 20% by volume and up to around 80% by volume.

An object of the present invention is to provide a polishing table capable of preventing peeling or detachment of a coating of the polishing table, thereby to enable an operation for replacement of a polishing pad to be easily conducted. One embodiment of the present invention provides a polishing table having a support surface configured to support a polishing pad, the polishing pad being adapted to be used for polishing a substrate, the polishing table comprising: a stacked body comprising a stack of a porous layer and a non-porous layer, the porous layer including open pores formed in a surface thereof disposed to face a polishing pad; and a resin-based coating material disposed in the open pores so as to form at least a part of the support surface of the polishing table.

An object of the present invention is to provide a polishing table capable of preventing peeling or detachment of a coating of the polishing table, thereby to enable an operation for replacement of a polishing pad to be easily conducted. One embodiment of the present invention provides a polishing table having a support surface configured to support a polishing pad, the polishing pad being adapted to be used for polishing a substrate, the polishing table comprising: a stacked body comprising a stack of a porous layer and a non-porous layer, the porous layer including open pores formed in a surface thereof disposed to face a polishing pad; and a resin-based coating material disposed in the open pores so as to form at least a part of the support surface of the polishing table.

The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 m, a specific gravity of 0.7 to 0.9 g/cm.sup.3, a surface hardness at 25 C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm.sup.2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 m.

The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 m, a specific gravity of 0.7 to 0.9 g/cm.sup.3, a surface hardness at 25 C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm.sup.2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 m.

A method of fabricating a chemical mechanical polishing pad includes introducing polymer precursors containing acrylate functional groups into a mold, providing abrasive particles and a photo-initiator in the polymer precursors to form a mixture, and while the mixture is contained between a bottom plate and a top cover of the mold, exposing the mixture to ultraviolet radiation through a transparent section of the mold to cause the polymer precursors to form radicals, forming a polymer matrix from the polymer precursor by causing the radicals to cross-link with one another. The polishing layer includes the polymer matrix having the abrasive particles dispersed therein.

A method of fabricating a chemical mechanical polishing pad includes introducing polymer precursors containing acrylate functional groups into a mold, providing abrasive particles and a photo-initiator in the polymer precursors to form a mixture, and while the mixture is contained between a bottom plate and a top cover of the mold, exposing the mixture to ultraviolet radiation through a transparent section of the mold to cause the polymer precursors to form radicals, forming a polymer matrix from the polymer precursor by causing the radicals to cross-link with one another. The polishing layer includes the polymer matrix having the abrasive particles dispersed therein.