A glass element having a thickness from 25 ?m to 125 ?m, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress ?I of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that it does not fail when it is subject to 200,000 cycles of bending to a target bend radius of from 1 mm to 20 mm, by the parallel plate method. Still further, the glass element has a puncture resistance of greater than about 1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm.

A curved stack structure is provided. The curved stack structure includes a base having a curved surface. An adhesive layer is disposed on the base, and a substrate is disposed on the adhesive layer, wherein the substrate has a first thickness that is greater than or equal to 0.01 mm and less than or equal to 0.4 mm. A fabrication method of the curved stack structure and a curved electronic device including the curved stack structure are also provided.

An arc-bending translucent assembly is disclosed in the present disclosure. The arc-bending translucent assembly includes a first substrate and a second substrate. The first substrate has a first thickness and a second thickness at two sides thereof. The first substrate further includes a first arc surface and a second arc surface, in which a third thickness exists between a first top of the first arc surface and a second top of the second arc surface. The third thickness is larger than the first thickness or the second thickness. The second substrate is bent and disposed close to the second arc surface of the first substrate.

A glass element having a thickness from 25 m to 125 m, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress I of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that it does not fail when it is subject to 200,000 cycles of bending to a target bend radius of from 1 mm to 20 mm, by the parallel plate method. Still further, the glass element has a puncture resistance of greater than about 1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm.

A photovoltaic module includes: a solar laminated assembly; a first glass adhered to one surface of the solar laminated assembly; a back sheet or a second glass adhered to the other surface of the solar laminated assembly; and encapsulant layers adhering the first glass to the solar laminated assembly and adhering the back sheet or the second glass to the solar laminated assembly. The photovoltaic module may be manufactured by previously manufacturing a solar laminated assembly through a first lamination process, and post-adhering a) a first glass and b) a back sheet or a second glass to the solar laminated assembly.

An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic emitter; wherein the at least one non-metallic emitter comprises at least 70% silicon by weight and less than 99.99% silicon by weight; wherein the at least one emitter comprises at least one treated surface section with a destroyed oxidation layer; and generating ions from the at least one non-metallic emitter in response to the high frequency AC voltage. Another embodiment of the invention provides an apparatus for low emission charge neutralization wherein the apparatus can perform the above-described operations.

An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic emitter; wherein the at least one non-metallic emitter comprises at least 70% silicon by weight and less than 99.99% silicon by weight; wherein the at least one emitter comprises at least one treated surface section with a destroyed oxidation layer; and generating ions from the at least one non-metallic emitter in response to the high frequency AC voltage. Another embodiment of the invention provides an apparatus for low emission charge neutralization wherein the apparatus can perform the above-described operations.

A glass element having a thickness from 25 m to 125 m, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress I of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that it does not fail when it is subject to 200,000 cycles of bending to a target bend radius of from 1 mm to 20 mm, by the parallel plate method. Still further, the glass element has a puncture resistance of greater than about 1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm.

An interlayer for a laminated glass is provided. The interlayer film contains (a) a polyvinyl acetal with an acetalization degree of 60 to 80 mol %, a content of a vinyl ester monomer unit of from 0.1 to 20 mol %, and a viscosity-average degree of polymerization of from 1400 to 4000, and (b) light-diffusing fine particles in which an absolute value difference between a refractive index of the light-diffusing fine particles and a refractive index of the intrlayer excluding the light-diffusing fine particles is 0.20 or more and a haze as measured in accordance with JIS K 7105 for a laminated glass prepared by sandwiching the interlayer film between two glass sheets with a thickness of 3 mm is 20% or less.

A glass element having a thickness from 25 m to 125 m, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress I of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that it does not fail when it is subject to 200,000 cycles of bending to a target bend radius of from 1 mm to 20 mm, by the parallel plate method. Still further, the glass element has a puncture resistance of greater than about 1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm.