The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps to form a differential pressure sensor.

A waterproof MEMS chip package structure includes a substrate having aa through hole cut through opposing top and bottom surface thereof, a waterproof membrane disposed in the through hole, an along chip bonded to the top surface of the substrate, a MEMS chip stacked on the analog chip and electrically connected to the substrate and the analog chip by wire bonding, and a top cover mounted on the substrate to form an accommodation chamber that accommodates the analog chip and the MEMS chip and communicates with the outside through the through hole. Therefore, the MEMS chip package structure of the present invention utilizes the waterproof membrane to block water vapor from entering the accommodation chamber through the through hole, thereby achieving the effect of protecting the chips.

A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

A method includes attaching an upper substrate to an upper surface of a sensor substrate, forming, on an upper surface of the upper substrate, a mask providing a first opening and a second opening communicating with the first opening, the second opening having a width that decreases with increase in a distance from the first opening, carrying out a sandblast process on the upper substrate exposed to an outside via the first opening and the second opening, allowing the sensor substrate to be exposed to the outside immediately below the first opening, and forming a slope on the upper substrate immediately below the second opening, and forming a first wiring member in contact with the exposed sensor substrate and a second wiring member being in contact with the slope and continuing to the first wiring member.

A MEMS component having increased integration density and a method for manufacturing such a component are specified. The component comprises a base wafer and a cover wafer arranged over this. A first cavity is arranged between the base wafer and the cover wafer. A second cavity is arranged over the cover wafer, below a thin-layer covering. The cavities contain component structures.

A semiconductor apparatus includes a first substrate having a first surface, a semiconductor device, a first flexible connecting member electrically connected to the semiconductor device, a first pad connected to the first flexible connecting member, and a second substrate including a bump and an interconnect. The second substrate is a low-temperature sintered ceramic substrate containing alkali metal ions. The first pad is connected to the interconnect via the bump. The first pad has at least a portion overlapping the semiconductor device in a plan view seen in a direction along a normal to the first surface. The semiconductor apparatus can thus be miniaturized.

A bonded structure can include a first element having a first interface feature and a second element having a second interface feature. The first interface feature can be bonded to the second interface feature to define an interface structure. A conductive trace can be disposed in or on the second element. A bond pad can be provided at an upper surface of the first element and in electrical communication with the conductive trace. An integrated device can be coupled to or formed with the first element or the second element.

A ring-like sealing frame (3) and a bump (4) are simultaneously formed on a main surface of a first substrate (1) by patterning a metal paste. A ring-like protrusion (8) having a smaller width than a width of the sealing frame (3) is formed on a main surface of a second substrate (5). The main surface of the first substrate (1) and the main surface of the second substrate (5) are aligned to face each other. The sealing flame (3) is bonded to the protrusion (8), and the bump (4) is electrically bonded to the second substrate (5). A height of the protrusion (8) is 0.4 to 0.7 times a distance between the first substrate (1) and the second substrate (2) after bonding.

Systems, apparatuses, and methods for manufacturing a microelectromechanical system (MEMS) device. The MEMS device includes a substrate, a cap, a microelectromechanical component, and a tag. The cap is coupled to the substrate such that the substrate and the cap cooperatively define an interior cavity. One of the substrate or the cap defines a port. The microelectromechanical component is disposed within the interior cavity. The tag is coupled to the substrate and an exterior surface of the cap to secure the cap to the substrate.

The integrated CMOS-MEMS device includes a CMOS structure, a cap structure, and a MEMS structure. The CMOS structure, fabricated on a first substrate, includes at least one conducting layer. The cap structure, including vias passing through the cap structure, has an isolation layer deposited on its first side and has a conductive routing layer deposited on its second side. The MEMS structure is deposited between the first substrate and the cap structure. The integrated CMOS-MEMS device also includes a conductive connector that passes through one of the vias and through an opening in the isolation layer on the cap structure. The conductive connector conductively connects a conductive path in the conductive routing layer on the cap structure with the at least one conducting layer of the CMOS structure.