A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

A method of manufacturing MEMS housings includes: providing glass spacers; providing a window plate; attaching the window plate to the glass spacers; aligning the glass spacers with a device glass plate having MEMS devices thereon; bonding the glass spacers to the device glass plate; and singulating the glass spacers, window plate, and device glass plate to produce the MEMS housings.

The present disclosure relates to an apparatus having a substrate arrangement with a first circuit arrangement that heats up during operation and a second circuit arrangement that is integrated into a substrate material of the substrate arrangement. Further, the apparatus has a cavity structure that is arranged between the first and the second circuit arrangement, said cavity structure being formed in the substrate material and having a pressure that is lower than an ambient atmospheric pressure.

Some embodiments of the present disclosure are related to an integrated chip including a first substrate underlying a second substrate. The first and second substrates at least partially define a cavity. An absorptive layer is disposed within the cavity and comprises a reactive mater. An absorption-enhancement layer is disposed along the absorptive layer and within the cavity. The absorption-enhancement layer is configured to pass the reactive material from a top surface to a bottom surface of the absorption-enhancement layer.

Process for encapsulation of a microelectronic device comprising the following steps in sequence: supply a support substrate comprising a first principal face on which a microelectronic device is placed, a second principal face, and a lateral face, deposit a bonding layer on the first principal face of the substrate, position an encapsulation cover comprising a first principal face, a second principal face, and a lateral face, on the bonding layer, deposit a lateral protection layer on: the lateral face and the periphery of the second principal face of the support substrate, the lateral face and the periphery of the second principal face of the encapsulation cover, the lateral protection layer delimiting a protected zone, thinning of the second principal face of the support substrate and/or the second principal face of the encapsulation cover outside the protected zone.

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is exposed; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a protection layer including a plurality of beads embedded within a top region of the polymeric gel.

A pressure sensor designed to detect a value of ambient pressure of the environment external to the pressure sensor includes: a first substrate having a buried cavity and a membrane suspended over the buried cavity; a second substrate having a recess, hermetically coupled to the first substrate so that the recess defines a sealed cavity the internal pressure value of which provides a pressure-reference value; and a channel formed at least in part in the first substrate and configured to arrange the buried cavity in communication with the environment external to the pressure sensor. The membrane undergoes deflection as a function of a difference of pressure between the pressure-reference value in the sealed cavity and the ambient-pressure value in the buried cavity.

An ultrasonic transducer device includes a bottom electrode layer of a transducer cavity disposed over a substrate, and a plurality of vias that electrically connect the bottom electrode layer with the substrate. A bottom cavity layer is disposed over the bottom electrode layer, and one or more openings are formed in the bottom cavity layer so as to expose a region of the bottom electrode layer, wherein locations of the one or more openings are segments that are disposed proximate an outer perimeter of the transducer cavity and substantially correspond to locations where the plurality of vias are not disposed directly beneath.

A MEMS element within a semiconductor device is enclosed within a cavity bounded at least in part by hydrogen-permeable material. A hydrogen barrier is formed within the semiconductor device to block propagation of hydrogen into the cavity via the hydrogen-permeable material.