A substrate for sensing, a method of manufacturing the substrate, and an analyzing apparatus including the substrate are provided. The substrate for sensing includes: a support layer; a plurality of metal nanoparticle clusters arranged on the support layer; and a plurality of perforations arranged among the plurality of metal nanoparticle clusters. The plurality of metal nanoparticle clusters each comprise a plurality of metal nanoparticles stacked in a three-dimensional structure. Each of the plurality of perforations transmits incident light therethrough.

A method for manufacturing a semiconductor device package includes providing an electrically insulating film having film terminal contacts on a surface thereof, and an opening therethrough. A semiconductor device arrangement at least including a carrier element having arranged thereon a projecting element and element terminal contacts is deposited on the film, wherein the projecting element is introduced into the opening and the element terminal contacts are arranged in contact with the film terminal contacts. The planarization layer is deposited over the carrier element and the film.

A method for fabrication of diffractive optics by batch processing is disclosed, having applicability to high resolution ultra-high aspect ratio Fresnel Zone Plates for focusing of X-rays or gamma-rays having energies up to hundreds of keV. An array of precursor forms is etched into a planar substrate. Sidewalls of the forms are smoothed to a required surface roughness. A sequence of alternating layers of different complex refractive index, for binary or higher order diffractive optics, are deposited on the precursor forms by atomic layer deposition (ALD), to provide diffractive line patterns. Thinnest layers may have nanometer thicknesses. After front surface planarization and thinning of the substrate to expose first and second surfaces of the diffractive line patterns of the diffractive optic, the height h in the propagation direction provides a designed absorption difference and/or phase shift difference between adjacent diffractive lines. Optionally, post-processing enhances mechanical, thermal, electrical and optical properties.

The damascene wiring structure includes a base including a main surface provided with a groove, an insulating layer including a first portion provided on an inner surface of the groove and a second portion provided on the main surface, a metal layer provided on the first portion, a wiring portion embedded in the groove, and a cap layer provided to cover the second portion and the wiring portion. A surface of a boundary part between the first portion and the second portion includes an inclined surface inclined with respect to a direction perpendicular to the main surface.

A substrate for sensing, a method of manufacturing the substrate, and an analyzing apparatus including the substrate are provided. The substrate for sensing includes: a support layer; a plurality of metal nanoparticle clusters arranged on the support layer; and a plurality of perforations arranged among the plurality of metal nanoparticle clusters. The plurality of metal nanoparticle clusters each comprise a plurality of metal nanoparticles stacked in a three-dimensional structure. Each of the plurality of perforations transmits incident light therethrough.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.