B81C2201/0112

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING DAMASCENE WIRING STRUCTURE, SEMICONDUCTOR SUBSTRATE, AND DAMASCENE WIRING STRUCTURE

A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.

METHOD FOR FORMING A TRENCH IN A FIRST SEMICONDUCTOR LAYER OF A MULTI-LAYER SYSTEM
20220230886 · 2022-07-21 ·

A method for forming a trench in a first semiconductor layer of a multi-layer system. The method includes: applying a mask layer onto the first semiconductor layer, a recess being formed in the mask layer so that the first semiconductor layer is exposed within the recess; applying a protective layer which completely covers or modifies the first semiconductor layer exposed within the recess; applying a second semiconductor layer; etching the second semiconductor layer to completely remove it in a subarea surrounding the recess of the mask layer; etching the protective layer so that the first semiconductor layer is exposed within the recess; and forming the trench in the first semiconductor layer, the recess of the mask layer serving as an etching mask, and the trench being formed by a cyclical alternation between etching and passivation steps, the first etching step being longer than the subsequent etching steps.

Method for manufacturing a MEMS unit for a micromechanical pressure sensor

A method for manufacturing a MEMS unit for a micromechanical pressure sensor. The method includes the steps: providing a MEMS wafer including a silicon substrate and a first cavity formed therein, under a sensor membrane; applying a layered protective element on the MEMS water; and exposing a sensor core from the back side, a second cavity being formed between the sensor core and the surface of the silicon substrate, and the second cavity being formed with the aid of an etching process which is carried out with the aid of etching parameters changed in a defined manner; and removing the layered protective element.

Method of addressing dissimilar etch rates
11211258 · 2021-12-28 · ·

A method for DRIE matched release and/or the mitigation of photo resist pooling, comprising: depositing a first mask layer over a first surface of a silicon substrate; exposing a first portion and second portion of the first mask layer to a first etch process, wherein the exposing forms a first exposed layer; depositing a second mask layer over the first mask layer; exposing a third portion of the second mask layer to a second etch process, wherein the exposing forms a second exposed mask layer, and wherein the third portion overlaps the first portion of the first mask layer; developing the second mask layer and etching the third portion of the second mask layer and developing the first portion of the first mask layer; etching the first portion of the first mask layer to a first depth; and developing the first mask layer to reveal exposed portions of the first mask layer and etching the second portion of the silicon substrate to a second depth.

Preparation Method Of Miniature Solid Silicon Needle
20210395078 · 2021-12-23 ·

The present invention, in some embodiments thereof, provides a preparation method of a miniature solid silicon needle. The preparation method includes the following steps: growing one layer of silicon dioxide on a surface of monocrystalline silicon; depositing one layer of silicon nitride protective film on a surface of the silicon dioxide; coating a surface of the silicon nitride protective film with photoresist; and performing exposing, developing and etching, wherein the protective film adopts silicon nitride and is capable of accelerating etching reaction in the process of etching silicon, so that a diameter of a base of the silicon needle is smaller. According to the present invention, the process is simple, and the solid silicon needle has high durability and is suitable for transdermal drug permeation of biomacromolecule drugs.

Method and Control Unit for Producing a Carrier Element for Receiving a Sample Liquid, Carrier Element, Carrier Module, and Method for Using a Carrier Element
20230241602 · 2023-08-03 ·

A method for producing a carrier element for receiving a sample liquid is disclosed. The method includes a step of coating a carrier substrate with a light-sensitive polymer layer in order to obtain a coated carrier substrate, in particular wherein the carrier substrate has a hydrophilic surface quality. The method also includes an exposure and development step wherein the coated carrier substrate is exposed and developed in order to obtain a structured polymer layer. The method also includes a fluorination step, wherein the structured polymer layer on the carrier substrate is fluorinated in order to produce the carrier element for receiving the sample liquid, in particular wherein the structured polymer layer obtains a hydrophobic surface quality as a result of the fluorination step.

Methods for increasing aspect ratios in comb structures

A method comprises: patterning a substrate, including a conductive region, with photoresist exposed by lithography, where the substrate is mounted on a handle substrate; forming a comb structure with conductive fingers on the substrate by at least removing a portion of the conductive region of the substrate; removing the photoresist; forming, one atomic layer at a time, at least one atomic layer of at least one conductor over at least one sidewall of each conductive finger; attaching at least one insulator layer to the comb structure, and the substrate from which the comb structure is formed; and removing the handle substrate.

Inertial sensor, method for manufacturing inertial sensor, inertial measurement unit, portable electronic apparatus, electronic apparatus, and vehicle
11448506 · 2022-09-20 · ·

A gyro sensor includes a plurality of beams connected via a turnaround part. A groove is provided on a main surface of at least one beam of the plurality of beams. Wall thicknesses on the main surface of two sidewalls facing each other of the groove in a direction orthogonal to a longitudinal direction of the beam satisfy 0.9≤T1/T2≤1.1, where T1 is the wall thickness of one sidewall and T2 is the wall thickness of the other sidewall.

SEGMENTED PEDESTAL FOR MOUNTING DEVICE ON CHIP
20210331915 · 2021-10-28 ·

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

METHOD FOR MANUFACTURING A MICROMECHANICAL STRUCTURE AND MICROMECHANICAL STRUCTURE
20210331916 · 2021-10-28 ·

A method for manufacturing a micromechanical structure and a micromechanical structure. The method includes: forming a first micromechanical functional layer; forming a plurality of trenches in the first micromechanical functional layer, which include an upper widened area at the upper side of the first micromechanical functional layer and a lower area of essentially constant width; depositing a sealing layer on the upper side of the first micromechanical functional layer to seal the plurality of trenches, a sealing point of the plurality of trenches being formed below the upper side of the first micromechanical functional layer and the first trenches being at least partially filled; thinning back the sealing layer by a predefined thickness; and forming a second micromechanical functional layer above the thinned-back sealing layer.