A method for forming a chemical guiding structure intended for the self-assembly of a block copolymer by chemoepitaxy, includes forming on a substrate at least one initial pattern made of a first grafted polymer material having a first molar mass and a first chemical affinity with respect to the block copolymer; covering the initial pattern and a region of the substrate adjacent to the initial pattern with a layer including a second graftable polymer material, the second polymer material having a second molar mass, greater than the first molar mass, and a second chemical affinity with respect to the block copolymer, different from the first chemical affinity; and grafting the second polymer material in the region adjacent to the initial pattern.

Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.

A method of design or verification for a self-assemblable block copolymer feature, the block copolymer feature including a first domain having a first polymer type and a second domain having a second polymer type, the method including, based on the length of the second polymer type or on an uncertainty in position of the first domain within the block copolymer feature calculated based on the length of the second polymer type, adjusting a parameter of the self-assembly process of a block copolymer feature or verifying a placement of a block copolymer feature.

A method for forming a chemical guiding structure intended for self-assembly of a block copolymer by chemoepitaxy, where the method includes forming on a substrate a functionalisation layer made of a first polymer material having a first chemical affinity with respect to the block copolymer; forming on the substrate guiding patterns made of a second polymer material having a second chemical affinity with respect to the block copolymer, different from the first chemical affinity, and wherein the guiding to patterns have a critical dimension of less than 12.5 nm and are formed by means of a mask comprising spacers.

A substrate on which a processing film made of a directed self-assembly material is formed is placed on a holding plate incorporating a preheating mechanism, and is preheated. A low oxygen atmosphere surrounds the substrate. A preheating temperature is a temperature at which the directed self-assembly material comprised of two types of polymers is phase-separated. By preheating the processing film, the two types of polymers are phase-separated to form a fine pattern. The processing film is irradiated with flashes of light from flash lamps while being preheated. This increases the fluidity of the polymers constituting the processing film to achieve the formation of a fine pattern while suppressing the occurrence of defects.

Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.

A method for directing a self-assembly of a block copolymer comprising a first and a second block is provided. The method including: providing a substrate comprising at least one concavity therein, the concavity comprising at least a sidewall and a bottom, the bottom having a preferential wetting affinity for the second block with respect to the first block; grafting a first grafting material onto the sidewall, selectively with respect to the bottom, the first grafting material having a preferential wetting affinity for the first block with respect to the second block; grafting a second grafting material onto the bottom and optionally onto the sidewall, the second grafting material having a preferential wetting affinity towards the first block with respect to the second block; and providing the block copolymer on the substrate, at least within the at least one concavity.

Techniques for generating enhanced inductors and other electronic devices are presented. A device generator component (DGC) performs directed-self assembly (DSA) co-polymer deposition on a circular guide pattern formed in low-k dielectric film, and DSA annealing to form two polymers in the form of alternating concentric rings; performs a loop cut in the concentric rings to form concentric segments; fills the cut portion with insulator material; selectively removes first polymer, fills the space with low-k dielectric, and planarizes the surface; selectively removes the second polymer, fills the space with conductive material, and planarizes the surface; deposits low-k film on top of the concentric segments and insulator material that filled the loop cut portion; forms vias in the low-k film, wherein each via spans from an end of one segment to an end of another segment; and fills vias with conductive material to form conductive connectors to form substantially spiral conductive structure.

A method for forming a functionalised assembly guide intended for the self-assembly of a block copolymer by graphoepitaxy, includes forming on the surface of a substrate a neutralisation layer made of a first material having a first neutral chemical affinity with regard to the block copolymer; forming on the neutralisation layer a first mask including at least one recess; depositing on the neutralisation layer a second material having a second preferential chemical affinity for one of the copolymer blocks, in such a way as to fill the at least one recess of the first mask; and selectively etching the first mask relative to the first and second materials, thereby forming at least one guide pattern made of the second material arranged on the neutralisation layer.

Methods for forming an electrode structure, which can be used as a biosensor, are provided in which the electrode structure has non-random topography located on one surface of an electrode base. In some embodiments, an electrode structure is obtained that contains no interface between the non-random topography of the electrode structure and the electrode base of the electrode structure. In other embodiments, electrode structures are obtained that have an interface between the non-random topography of the electrode structure and the electrode base of the electrode structure.