A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.

A MEM vibration sensor includes a substrate and a sensing-device. The substrate includes a first supporting-portion and a cavity. The sensing-device includes a first sensing-unit, a second sensing-unit, a first metal pad and a second metal pad. The first sensing-unit includes a second supporting-portion and a vibrating-portion. The second supporting-portion is located on the first supporting-portion and is connected to the first supporting-portion via a first dielectric material. The vibrating-portion is located on the cavity, and is connected with the second supporting-portion through an elastic connecting-portion. The second sensing-unit is located on the first sensing-unit and includes a sensing-portion and a third supporting-portion. The sensing-portion is located on the vibrating-portion and has a gap with the vibrating-portion. The third supporting-portion is located on the second supporting-portion, is connected to the sensing-portion, and is connected to the second supporting-portion through a second dielectric material.

Provided is a method for producing a multi-layered microchannel device by using a photosensitive resin laminate, which is highly-defined and excellent in dimension accuracy and enables channels to be partially hydrophilized or hydrophobilized, wherein the method comprises step (i) of sequentially carrying out (i-a) forming a first photosensitive resin layer on a substrate, (i-b) light-exposing the first photosensitive resin layer, and (i-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a first channel pattern layer; and step (ii) of sequentially carrying out (ii-a) laminating a second photosensitive resin laminate on the first channel pattern layer formed in the step (i), (ii-b) light-exposing a photosensitive layer of the second photosensitive resin laminate, and (ii-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a second channel pattern layer.

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.

The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

A method of manufacturing a plurality of through-holes in a layer of first material by subjecting part of the layer of said first material to ion beam milling. For batch-wise production, the method comprises after a step of providing the layer of first material and before the step of ion beam milling, providing a second layer of a second material on the layer of first material, providing the second layer of the second material with a plurality of holes, the holes being provided at central locations of pits in the first layer, and subjecting the second layer of the second material to said step of ion beam milling at an angle using said second layer of the second material as a shadow mask.

A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.

A MEMS sensor includes a bond portion in which a metal structure in a device substrate and a metal laminate are eutectically bonded. The bond portion bonds the device substrate and a lid substrate. The metal laminate is located on a main surface of the lid substrate and facing an exposed portion in the metal structure. The metal laminate includes a first metal and a second metal different from the first metal.

In accordance with the disclosure, a method of forming a nanochannel is provided. The method includes depositing a photosensitive film stack over a substrate; forming a pattern on the film stack using interferometric lithography; depositing a plurality of silica nanoparticles to form a structure over the pattern; removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises one or more enclosed nanochannels, wherein each of the one or more nanochannels comprise one or more sidewalls and a roof; and partially sealing the roof of one or more nanochannels, wherein the roof comprises no more than one unsealed nanochannel per squared micron.

A three-dimensional (3D) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The method includes providing a composite photoresist material that includes: (a) a first photoresist layer derived from a photoresist resin having a first chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density and (b) at least a second photoresist layer derived from a photoresist resin having a second chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density different from the first chemical property. The composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material and the composite photoresist material has varying mechanical and/or physical properties through a thickness of the 3D structure.

A manufacturing method of a micro electro mechanical system (MEMS) device includes forming a buffer protection layer on a semiconductor structure, wherein the semiconductor structure includes a wafer, a MEMS membrane, and an isolation layer between the wafer and the MEMS membrane, and the buffer protection layer is located in a slit of the MEMS membrane and on a surface of the MEMS membrane facing away from the isolation layer; etching the wafer to form a cavity such that a portion of the isolation layer is exposed though the cavity; etching the portion of the isolation layer; and removing the buffer protection layer.