The present invention relates to a method for transferring two-dimensional nanomaterials. The method comprises the following steps: (S1) providing a first substrate with a two-dimensional nanomaterial layer on a surface of the first substrate; (S2) covering the two-dimensional nanomaterial layer with a carbon nanotube film structure; (S3) obtaining a composite structure comprising the two-dimensional nanomaterial layer and the carbon nanotube film structure by removing the first substrate with a corrosion solution to; (S4) placing the composite structure on a surface of a cleaning solution; (S5) providing a target substrate comprising at least one through hole, and picking up the composite structure from the cleaning solution with the target substrate by contacting the target substrate with the two-dimensional nanomaterial layer of the composite structure and covering the at least one through hole with two-dimensional nanomaterial layer; and (S6) removing the carbon nanotube film structure from the composite structure.

A method of manufacturing an electronic device includes providing a component carrier having a laminate of at least one electrically conductive layer structure and at least one electrically insulating layer structure, providing a mounting base for mounting an electronic component on and/or in the component carrier, and integrally forming a wall structure with the component carrier prior to mounting an electronic component on the mounting base, the integrally formed wall structure at least partially surrounding the mounting base for mounting the electronic component on the mounting base and protected by the wall structure.

A MEMS device is obtained by forming a temporary biasing structure on a semiconductor body, and forming an actuation coil on the semiconductor body, the actuation coil having at least one first end turn, one second end turn and an intermediate turn arranged between the first and the second end turns and electrically coupled to the first end turn through the temporary biasing structure. In this way, the intermediate turn is biased at approximately the same potential as the first end turn during galvanic growth, and, at the end of growth, the actuation coil has an approximately uniform thickness. At the end of galvanic growth, portions of the temporary biasing structure are selectively removed to electrically separate the first end turn from the intermediate turn and from a dummy biasing region adjacent to the first end turn.

The superior electronic and mechanical properties of 2D-layered transition metal dichalcogenides and other 2D layered materials could be exploited to make a broad range of devices with attractive functionalities. However, the nanofabrication of such layered-material-based devices still needs resist-based lithography and plasma etching processes for patterning layered materials into functional device features. Such patterning processes lead to unavoidable contaminations, to which the transport characteristics of atomically-thin layered materials are very sensitive. More seriously, such lithography-introduced contaminants cannot be safely eliminated by conventional material wafer cleaning approaches. This disclosure introduces a rubbing-induced site-selective growth method capable of directly generating few-layer molybdenum disulfide device patterns without the need of any additional patterning processes. This method consists of two critical steps: (i) a damage-free mechanical rubbing process for generating microscale triboelectric charge patterns on a dielectric surface, and (ii) site-selective deposition of molybdenum disulfide or the like within rubbing-induced charge patterns.

A photo-patterned fluorocarbon monolayer directly grafted to Si surface atoms provides anti-wetting performance at controlled locations, wherein the Si surface oxide is etched and reacted with fluorocarbon chains with a terminal CC double bond, resulting in SiC surface. As the direct SiC linkages are chemically robust, and much more resistant to decomposition than SiOC bonds, the resulting surface does not suffer from the shortcomings of current MEMS dispensers.

Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

A method of manufacturing a nanobeam structure by printing, namely coaxial focused electrohydrodynamic jet printing. In this method, under the combined action of electric field, thermal field and flow field, a stable coaxial jet is formed and used to print linear bilayer encapsulated structure on a substrate with a prefabricated support structure. Within the coaxial jet, the nanoscale inner liquid consisting of functional material is encapsulated by the microscale outer liquid consisting of high viscous material, which has the capability to directly print functional nanobeam structures. This high viscous material eliminates the disturbance of external micro-environment, and plays a role of supporting the printed inner structure before complete solidification of the inner material. A nanobeam structure only consisting of inner function material is formed on the substrate when the outer high viscous encapsulated material is removed.

A photo-patterned fluorocarbon monolayer directly grafted to Si surface atoms provides anti-wetting performance at controlled locations, wherein the Si surface oxide is etched and reacted with fluorocarbon chains with a terminal CC double bond, resulting in SiC surface. As the direct SiC linkages are chemically robust, and much more resistant to decomposition than SiOC bonds, the resulting surface does not suffer from the shortcomings of current MEMS dispensers.

In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

A method of processing nano- and micro-pores includes washing a substrate and cleaning a surface of the substrate; spin-coating photoresist, exposing the substrate and developing to form the substrate with a pattern; 3. depositing micro-nano metal particles on the surface of the substrate; wherein the micro-nano metal particles are centered on a magnetic core; and the surface of the magnetic core is plated with a metal nano-particle coating composed of a plurality of gold, silver or aluminum nanoparticles; removing the photoresist, and maintaining dot arrays of the micro-nano metal particles; applying laser irradiation and a strong uniform magnetic field on the substrate, so that the substrate is processed to form processed structures; and after the processed structures being formed into nano-/micro-pores with targeted pore size, shape and depth, stopping the laser irradiation and removing the strong uniform magnetic field.