A compound sensor device includes a semiconductor substrate having an active electronic circuit formed in or on the semiconductor substrate. A sensor including a sensor substrate including a sensor circuit having an environmental sensor or actuator formed in or on the sensor substrate is micro-transfer printed onto the semiconductor substrate. One or more electrical conductors electrically connect the active electronic circuit to the sensor circuit. The semiconductor substrate includes a first material and the sensor substrate includes a second material different from the first material.

A method of transferring a two-dimensional material such as graphene onto a target substrate for use in the fabrication of micro- and nano-electromechanical systems (MEMS and NEMS). The method includes providing the two-dimensional material in a first lower state of strain; and applying the two-dimensional material onto the target substrate whilst the two-dimensional material is under a second higher state of strain. A device comprising a strained two-dimensional material suspended over a cavity.

A method comprises: patterning a substrate, including a conductive region, with photoresist exposed by lithography, where the substrate is mounted on a handle substrate; forming a comb structure with conductive fingers on the substrate by at least removing a portion of the conductive region of the substrate; removing the photoresist; forming, one atomic layer at a time, at least one atomic layer of at least one conductor over at least one sidewall of each conductive finger; attaching at least one insulator layer to the comb structure, and the substrate from which the comb structure is formed; and removing the handle substrate.

A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.

A method of manufacturing a panel transducer scale package includes securing acoustic components at predetermined locations on a first carrier substrate with a first surface of the acoustic components positioned adjacent to the first carrier substrate. ASIC components are also secured at predetermined locations on the first carrier substrate with a first surface of the ASIC components positioned adjacent to the first carrier substrate. Photoresist resin is applied over the acoustic components and the ASIC components such that a second surface of the acoustic components is left exposed from the photoresist resin. The first carrier substrate is removed to expose the first surface of the acoustic components and the first surface of the ASIC components. A buildup layer is formed including electrical pathways between each of the acoustic components and the ASIC components, and the photoresist resin is removed.

A MEMS microphone and a manufacturing method thereof are provided. The MEMS microphone comprises a MEMS microphone chip and a housing with an acoustic port. The MEMS microphone chip is mounted in the housing, and a mesh plug is mounted in the acoustic port and made from a mesh material which has a mesh structure that is suitable for passage of sound.

A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.

A method of forming a capacitive micromachined ultrasonic transducer (CMUT) device includes bonding a CMUT substrate to a silicon on insulator (SOI) substrate. The CMUT substrate has a first thickness and the SOI substrate includes a handle, a buried oxide layer, and a device layer. At least one of the CMUT substrate or the SOI substrate includes a patterned dielectric layer. The device layer is bonded to the patterned dielectric layer to form a plurality of sealed cavities and the device layer forms a diaphragm of the plurality of cavities. The method further includes reducing the first thickness of the CMUT substrate to a second thickness and forming a plurality of through-silicon vias from a second surface of the CMUT substrate opposite the first surface.

A method comprising: adhering a first surface of a mask to a carrier substrate via a first adhesive layer; forming a second adhesive layer on at least one of a second surface of the mask or a third surface of a wafer having a second alignment mark; bringing the carrier substrate and the wafer towards each other along a vertical axis such that the second surface of the mask and the third surface of the wafer is separated by an alignment gap based on a thickness of the second adhesive layer; performing an alignment operation based on imaging the first alignment mark and the second alignment mark; configuring the second surface of the mask to adhere to the third surface of the wafer via the second adhesive; and disconnecting the carrier substrate from the mask.

A method comprising: adhering a first surface of a mask to a carrier substrate via a first adhesive layer; forming a second adhesive layer on at least one of a second surface of the mask or a third surface of a wafer having a second alignment mark; bringing the carrier substrate and the wafer towards each other along a vertical axis such that the second surface of the mask and the third surface of the wafer is separated by an alignment gap based on a thickness of the second adhesive layer; performing an alignment operation based on imaging the first alignment mark and the second alignment mark; configuring the second surface of the mask to adhere to the third surface of the wafer via the second adhesive; and disconnecting the carrier substrate from the mask.