A thin-film filter includes thin-film part having a film surface and a rear film surface arranged a rear side of the film surface, a plurality of through holes being formed to penetrate the thin-film part from the film surface to the rear film surface, and stripes-formed inner wall surfaces. The stripes-formed inner wall surfaces include stripe-like parts formed along with an intersecting direction intersecting the film surface. The stripes-formed inner wall surfaces are formed inside the respective through holes.

The transfer of devices or device components from a carrier substrate to a further carrier substrate or to a plurality of further carrier substrates can be performed with little effort (few transfer steps) to the at least one further carrier substrate. The method comprises producing first devices on the first carrier substrate in a two-dimensional grid. It comprises defining positions on the second carrier substrate on the basis of the two-dimensional grid for at least some of the first devices. It comprises releasing a plurality of the first devices from the first carrier substrate while maintaining the two-dimensional grid. Finally, the plurality of first devices are applied to the second carrier substrate in the defined positions while maintaining the two-dimensional grid or a multiple thereof in at least one of the two directions.

A method of forming a capacitive micromachined ultrasonic transducer (CMUT) device includes bonding a CMUT substrate to a silicon on insulator (SOI) substrate. The CMUT substrate has a first thickness and the SOI substrate includes a handle, a buried oxide layer, and a device layer. At least one of the CMUT substrate or the SOI substrate includes a patterned dielectric layer. The device layer is bonded to the patterned dielectric layer to form a plurality of sealed cavities and the device layer forms a diaphragm of the plurality of cavities. The method further includes reducing the first thickness of the CMUT substrate to a second thickness and forming a plurality of through-silicon vias from a second surface of the CMUT substrate opposite the first surface.

A chip package includes a semiconductor substrate and a metal layer. The semiconductor substrate has an opening and a sidewall surrounding the opening, in which an upper portion of the sidewall is a concave surface. The semiconductor substrate is made of a material including silicon. The metal layer is located on the semiconductor substrate. The metal layer has plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, in which the metal layer is made of a material including aluminum.

Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate. Aspects also include patterning a metal on a silicon substrate. Aspects also include selectively masking the structure to expose the metal and a portion of the silicon substrate. Aspects also include depositing a conductive layer including a conductive metal on the structure. Aspects also include plating the conductive material on the structure. Aspects also include spalling the structure.

A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.

The present invention relates to a method of fabricating an electrode array, in which an underlying handle wafer is removed to provide a planar device having the electrode array. Also provided are wafers including a plurality of planar devices having an electrode array, as well as sensors including such an electrode array.

A nanostructure transfer method is provided. The method includes providing a first substrate (10) having thereon a plurality of nanostructures (12), the nanostructures (12) extending away from the first substrate (10). A solder material (14) is deposited on distal ends of the nanostructures (12). A second substrate (18) having thereon a first metal layer (20) is provided. The solder material (14) is bonded to the first metal layer (20), thereby attaching the nanostructures (12) to the second substrate (18). The attached nanostructures (12) are then released from the first substrate (10).

A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.

A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.