Provided is an exhaust gas treatment method where chlorine gas and a perfluoro compound can be decomposed in exhaust gas containing the chlorine gas and the perfluoro compound to reduce both a concentration of the chlorine gas and a concentration of the perfluoro compound in the gas. The method of treating exhaust gas containing chlorine gas and a perfluoro compound includes: a chlorine gas decomposition step of causing the chlorine gas in the exhaust gas to react with water to be decomposed in the presence of a chlorine gas decomposition catalyst; a hydrogen chloride removal step of removing hydrogen chloride from the gas having passed through the chlorine gas decomposition step; and a perfluoro compound decomposition step of causing the perfluoro compound in the gas having passed through the hydrogen chloride removal step to react to be decomposed in the presence of a perfluoro compound decomposition catalyst.

A method for controlling the semiconductor process environment is provided. The method includes placing a cleaning member in a processing chamber of a semiconductor processing tool. The method also includes creating a vacuum in the processing chamber. Furthermore, the method includes eliminating at least one compound from the residues in the processing chamber by the cleaning member. The cleaning member is configured to facilitate physical adsorption, catalysis, or chemical reactions with the residues in the processing chamber.

Provided are a catalyst treatment apparatus for heating an exhaust gas and decomposing perfluorocompounds using a catalyst, and an exhaust gas treatment system using the same. Even when an exhaust gas passes through a pretreatment wet-type treatment apparatus, the exhaust gas lacks oxygen, and a dust collecting operation is not smoothly performed at the rear due to the lack of oxygen. An exhaust gas charging unit charges fine particles in an exhaust gas by supplying air or oxygen. Thus, an operation of decomposing perfluorocompounds may be smoothly performed.