Patent classifications
B06B1/0681
BACKING MEMBER AND ULTRASONIC PROBE
A backing member includes a resin layer having a first surface, and a second surface opposite to the first surface, and a plurality of linear conductors, embedded in the resin layer, and penetrating the resin layer from the first surface to the second surface. Each of the plurality of linear conductors includes a metal material having an ultrasonic wave insulating property, and includes at least one bent portion or curved portion.
SEMICONDUCTOR DEVICE AND ULTRASONIC SENSOR
A semiconductor device includes a driving circuit arranged to be capable of supplying a drive signal in an ultrasonic band to a piezoelectric element, a damping circuit having a resistance load and an inductive load, and a control circuit arranged to be capable of controlling the driving circuit and performing a reverberation reduction operation after stopping the supply of the drive signal to the piezoelectric element. In the reverberation reduction operation, the control circuit controls the driving circuit to supply the piezoelectric element with a damping signal having a phase different from that of the drive signal, and then enables the damping circuit to connect to the piezoelectric element.
RINGDOWN CONTROLLED DOWNHOLE TRANSDUCER
An apparatus and system for deploying an acoustic sensor are disclosed. In some embodiments, an acoustic sensor includes a transducer comprising a piezoelectric material layer having a front side from which the transducer is configured to transmit acoustic sensing signals and an opposing back side. A backing material layer comprising an acoustic damping material is coupled at a front side to the back side of the piezoelectric material layer. An acoustic reflector such as may comprise a cavity containing gaseous or liquid fluid is disposed between the front side and a back side of the backing material layer.
Ultrasonic MEMS acoustic transducer with reduced stress sensitivity and manufacturing process thereof
An ultrasonic MEMS acoustic transducer formed in a body of semiconductor material having first and second surfaces opposite to one another. A first cavity extends in the body and delimits at the bottom a sensitive portion, which extends between the first cavity and the first surface of the body. The sensitive portion houses a second cavity and forms a membrane that extends between the second cavity and the first surface of the body. An elastic supporting structure extends between the sensitive portion and the body and is suspended over the first cavity.
Ultrasonic Device And Ultrasonic Apparatus
An ultrasonic device includes a base material that has an opening, a vibration plate that is provided on the base material and closes the opening, and a piezoelectric element that is provided on the vibration plate, in which the vibration plate has a first layer provided on the base material, and a second layer that is disposed between the first layer and the piezoelectric element and that suppresses diffusion of a component contained in the piezoelectric element, and a bending rigidity of the second layer is equal to or larger than a bending rigidity of the first layer.
ULTRASOUND TRANSDUCER HAVING AT LEAST ONE PIEZOELECTRIC OSCILLATOR
An ultrasound transducer with at least one piezoelectric oscillator, a damping compound and at least one electrically conductive conducting element that is in contact with the piezoelectric oscillator. The damping compound in an ultrasound transducer encloses at least the at least one conducting element, and the composite structure of the at least one conducting element and of the damping compound is designed such that the composite structure is in contact over an area with the piezoelectric oscillator, and forms a support on the side of the ultrasound transducer that faces away from the piezoelectric oscillator on which the ultrasound transducer can be supported.
MULTI-CAVITY PACKAGE FOR ULTRASONIC TRANSDUCER ACOUSTIC MODE CONTROL
A micromechanical system (MEMS) device package comprising a substrate and a first enclosure including a first cavity, coupled to the substrate. Wherein a transverse dimension of the first cavity relative to the substrate is configured to reduce undesirable acoustic modes within the first cavity and the first cavity comprises an acoustic port. A MEMS device is located inside the first cavity and an Application Specific Integrated Circuit (ASIC) is communicatively coupled to the MEMS device and located outside the first cavity.
ULTRASONIC TRANSDUCER, DIAGNOSTIC ULTRASONIC PROBE, SURGICAL INSTRUMENT, SHEET-TYPE ULTRASONIC PROBE, AND ELECTRONIC APPARATUS
[Object] To provide an ultrasonic transducer, a diagnostic ultrasonic probe, a surgical instrument, a sheet-type ultrasonic probe, and an electronic apparatus by which both of favorable reflection characteristics and suppression of reverberation at low cost can be achieved.
[Solving Means] An ultrasonic transducer for ultrasonic imaging according to the present technology includes a piezoelectric layer, an acoustic attenuation layer, and an acoustic reflection layer. The piezoelectric layer is formed of a piezoelectric material and generates ultrasonic waves. The acoustic attenuation layer is formed of an acoustic attenuation material having an acoustic impedance lower than that of the piezoelectric material. The acoustic reflection layer is arranged on a side of the acoustic attenuation layer and which is formed of an acoustic reflection material having an acoustic impedance higher than that of the acoustic attenuation material, the side being opposite to the piezoelectric layer. The acoustic attenuation layer has a thickness which is integer multiple of of a wavelength of an ultrasonic wave generated in the piezoelectric layer, the wavelength being inside the acoustic attenuation layer.
Piezoelectric transducers
A piezoelectric transducer comprises a piezoelectric element operable to transduce mechanical movement of the piezoelectric element to an electrical signal and to transduce an electrical signal in the piezoelectric element to a mechanical movement thereof, wherein the piezoelectric transducer is operable to transduce above a temperature of 200 C.
High Frequency Ultrasonic Transducer and Method of Fabrication
An ultrasonic transducer that includes a delay line, a piezoelectric element, and a metal conductive layer between the delay line and the piezoelectric element. The delay line and the piezoelectric element are acoustically joined with an atomic diffusion bond to facilitate coupling ultrasonic waves from the piezoelectric element into the delay line or from the delay line into the piezoelectric element.