A semiconductor manufacturing apparatus includes; a component separating apparatus configured to separate a defective component from a substrate, a bump conditioning apparatus including an end mill cutter and receiving the substrate following separation of the defective component from the substrate, the bump conditioning apparatus being configured to cut a first connection bump using the end mill cutter to provide a conditioned first connection bump, and the first connection bump being exposed by separating the defective component from the substrate, and a component attaching apparatus configured to receive the substrate following provision of the conditioned first connection bump, and mount a new component including a second connection bump to the substrate by coupling the second connection bump and the conditioned first connection bump.

A method for producing a thermal barrier coating on a component, more particularly on a turbine component and preferably on a turbine blade, wherein the component is provided with the thermal barrier coating and structures are then created in the outer surface of the thermal barrier coating using a laser ablation process so as to segment the surface of the thermal barrier coating, the structures being created in the surface of the thermal barrier coating by an ultrashort pulse laser, more particularly a femtosecond laser is provided.

Apparatus and method for realizing tubular optical waveguides in glass by femtosecond laser direct writing. Irradiation in glass with focused femtosecond laser pulses leads to decrease of refractive index in the modified region. Tubular optical waveguides of variable mode areas are fabricated by forming the four sides of the modified regions with slit-shaped femtosecond laser pulses, ensuring single mode waveguide with a mode field dimension compatible with direct coupling to single-mode optical fibers.

An inorganic substrate with an improved via shape and methods for facilitating formation of such improved via shape are disclosed. A double-sided opening process may be applied to an inorganic substrate to form openings at the ends of a damage track previously formed in the inorganic substrate. One side of the inorganic substrate may then be sealed, such as by being temporarily bonded to a carrier or blocking substrate, so that a single-sided opening process may be applied to the other unsealed or unblocked surface of the inorganic substrate. The single-sided opening process may enlarge at least one of the openings formed by the double-sided opening process and may enlarge a channel between the openings to form a via having an advantageous shape.

The present invention provides a single-beam double-physical-effect coordinating and distributing method applicable to uniform laser shock and application thereof, and belongs to the technical field of laser shock effect control. The present invention does not stipulate the specific adjusting and distributing mean, and only provides a coordinating principle and method. The present invention gives a universal and systematic method for setting absorption layer feature parameters applicable to mass laser shock uniform peening under a liquid constraint condition, so as to facilitate the relevant technician to quickly obtain the liquid constraint laser shock processing technology conforming to a distribution proportion of its double physical effects, thereby being beneficial to development and application of the laser shock peening treatment, and therefore having the good actual application value.

A marking device, a medium, a container, and a marking method. The marking device includes a first marker including a first optical system having a first focal point, the first marker being configured to concentrate a first light onto a first area of a non-planar portion of a medium to perform marking on the first area, the non-planar portion including a plurality of areas including the first area and a second area, and a second marker including a second optical system having a second focal point. The second marker is configured to concentrate a second light onto the second area to perform the marking on the second area, and the second focal point of the second optical system is different from the first focal point of the first optical system in a direction parallel to a central axis of the first optical system.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a rotating laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

A capacitor and methods of processing an anode metal foil are presented. The capacitor includes a housing, one or more anodes disposed within the housing, one or more cathodes disposed within the housing, one or more separators disposed between an adjacent anode and cathode, and an electrolyte disposed around the one or more anodes, one or more cathodes, and one or more separators within the housing. The one or more anodes each include a metal foil that includes a first plurality of tunnels through a thickness of the metal foil in a first ordered arrangement, the first ordered arrangement being a close packed hexagonal array arrangement, and having a first diameter, and a second plurality of tunnels through the thickness of the metal foil having a second ordered arrangement and a second diameter greater than the first diameter.

A method of manufacturing a display apparatus includes: providing a substrate having a first surface and a second surface and arranging the substrate on a carrier such that the second surface of the substrate contacts the carrier; forming a display device on the first surface of the substrate; arranging a first protective film on the display device; cutting a substrate by irradiating a first short pulse laser beam onto the second surface of the substrate through the carrier; and cutting the first protective film by irradiating a laser beam of an infrared wavelength range onto an area of the first protective film that overlaps a cut area of the substrate.

An interference fit fastener (FIG. 1) and method of fabricating same is described.