The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.

Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

A substrate processing method includes the processes of preparing a substrate having a concave-convex structure, forming a dielectric film including at least silicon and nitrogen on the concavo-convex structure, to form the dielectric film having a non-uniform portion in a recess of the concavo-convex structure, and forming a protective film on a surface of the dielectric film by exposing the dielectric film to first plasma including an oxygen gas, to form the protective film including a cap layer that closes the non-uniform portion by bonding an upper side of the non-uniform portion of the concavo-convex structure.

A method of manufacturing a semiconductor device includes may include preparing a base substrate, adsorbing a Si-based growth inhibitor, and selectively forming a metal oxide layer. The base substrate may include a growth region including TiN and a non-growth region including Si. Surfaces of the growth region and the non-growth region may be exposed. The Si-based growth inhibitor may be adsorbed on an exposed surface of the non-growth region by supplying the Si-based growth inhibitor to the base substrate. The metal oxide layer may be selectively formed on the growth region relative to the non-growth region by supplying a metal precursor and an oxidizing reactant gas to the base substrate. The selectively forming the metal oxide layer on the growth region may include forming a SiTiON layer between the surface of the growth region and the metal oxide layer.

A method for depositing an oxide on a substrate, comprising: a) providing the substrate in a chamber; b) initially pulsing a precursor into the chamber to chemisorb a constituent onto a surface of the substrate; c) pulsing an oxygen species into the chamber to form an oxide layer on the surface upon contact with the constituent, wherein the oxygen species comprises an alcohol; and repeating one or more steps b)-c) until the oxide layer is deposited to a desired thickness.

A process of forming an oxide layer, the oxide layer, a semiconductor device, and a method for manufacturing a semiconductor device. The process of forming the oxide layer including conducting atomic layer deposition at a temperature of less than about 400 C., wherein the atomic layer deposition includes: supplying a metal or semi-metal precursor and a first reaction catalyst to a substrate positioned in a chamber for atomic layer deposition to adsorb the metal or the semi-metal precursor on a surface of the substrate; and supplying a reactant and a second reaction catalyst to the substrate on which the metal or semi-metal precursor is adsorbed to form the oxide layer, wherein the first reaction catalyst and the second reaction catalyst comprise primary or secondary amine, respectively.

A method for implementing a thin film deposition process includes: transporting a substrate into a first chamber; feeding a precursor into the first chamber, the precursor being adsorbed on a top surface of the substrate; supplying radiant energy to at least a part of the top surface of the substrate to facilitate reaction between the precursor and the top surface of the substrate; transporting the substrate with the top surface being precursor-adsorbed into a second chamber that is separated from the first chamber and that is spatially isolated from the first chamber; feeding a reactant into the second chamber, wherein reaction between the reactant and the precursor results in a thin film forming on the top surface.

Exemplary processing methods may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor and the carbon-containing precursor. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-and-carbon-containing material from a sidewall of the feature within the substrate. The methods may include providing a nitrogen-containing precursor to the processing region of the semiconductor processing chamber, forming plasma effluents of the nitrogen-containing precursor, and doping the silicon-and-carbon-containing material with nitrogen.

A method for manufacturing a semiconductor device according to an embodiment has a first film formation step, a second film formation step, and an oxidizing step. In the first film formation step, a first coating film made of silicon is formed on a surface of a base material made of silicon carbide. In the second film formation step, a second coating film is formed on a surface of the first coating film. In the oxidizing step, the first coating film is thermally oxidized from a surface side to form a third coating film. In the second film formation step, on a part of the first coating film, the second coating film is not formed, and the part is exposed. Alternatively, in the second film formation step, a film thickness of the second coating film formed on the part of the first coating film is smaller than a film thickness of the second coating film formed on a different part.

Different isolation liners for different type FinFETs and associated isolation feature fabrication are disclosed herein. An exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining second fins in a second region. An oxide liner is formed over the first fins in the first region and the second fins in the second region. A nitride liner is formed over the oxide liner in the first region and the second region. After removing the nitride liner from the first region, an isolation material is formed over the oxide liner and the nitride liner to fill the first trenches and the second trenches. The isolation material, the oxide liner, and the nitride liner are recessed to form first isolation features (isolation material and oxide liner) and second isolation features (isolation material, nitride liner, and oxide liner).