A power module includes an upper substrate and a lower substrate, an upper chip, a lower chip, and a circuit board disposed across a space between the upper substrate and the lower chip and a space between the lower substrate and the upper chip so that the upper substrate and the lower substrate are vertically spaced from each other. The circuit board electrically connects the upper chip to the lower substrate while electrically connecting the lower chip to the upper substrate.

A package structure includes a circuit substrate, a semiconductor package, a lid structure, a passive device and a barrier structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The lid structure is disposed on the circuit substrate covering the semiconductor package. The lid structure is attached to the circuit substrate through an adhesive material. The passive device is disposed on the circuit substrate in between the semiconductor package and the lid structure. The barrier structure is separating the passive device from the lid structure and the adhesive material, and the barrier structure is in contact with the adhesive material.

An electronic system and associated methods are disclosed. In one example, the electronic system includes a processor package including at least one processor integrated circuit (IC); an interposer including electrically conductive interposer interconnect; a first liquid metal well array including multiple liquid metal wells arranged between the processor package and the interposer, wherein the first liquid metal well array is attached to a surface of the processor package and attached to a first surface of the interposer and the interposer interconnect; a printed circuit board (PCB) attached to a second surface of the interposer and the interposer interconnect; a second liquid metal well array including a first surface attached to the first surface of the interposer and the interposer interconnect; and a first companion component package attached to a second surface of the second liquid metal well array.

An IC die includes a temperature control element suitable for three-dimensional IC package with enhanced thermal control and management. The temperature control element may be formed as an integral part of an IC die that may assist temperature control of the IC die when in operation. The temperature control element may include a heat dissipation material disposed therein to assist dissipating thermal energy generated by the plurality of devices in the IC die during operation.

Provided is an electronic device, in which a first management module of a first chiplet generates a first request transaction for measuring a latency between the first chiplet and a second chiplet, and transmits the generated first request transaction to the second chiplet through a first interconnect module of the first chiplet, a second management module of the second chiplet generates a first response transaction corresponding to the first request transaction, and transmits the generated first response transaction to the first chiplet through a second interconnect module of the second chiplet, and the latency between the first chiplet and the second chiplet is determined based on a first time at which the first request transaction is generated in the first chiplet and a second time at which the first chiplet receives the first response transaction.

A semiconductor storage device according to an embodiment includes a board, a first semiconductor memory, a second semiconductor memory, a controller, and a wiring. The first semiconductor memory includes a first bonding member. The first semiconductor memory has a first corner, a second corner, a third corner, and a fourth corner. The second semiconductor memory includes a second bonding member. The second semiconductor memory has a fifth corner, a sixth corner, a seventh corner, and an eighth corner. The first bonding member is a first detection-bonding member. The first detection-bonding member detects a connection state of the first semiconductor memory and the second semiconductor memory. The second bonding member is a second detection-bonding member. The second detection-bonding member is electrically connected to the first detection-bonding member. The second detection-bonding member detects a connection state of the first semiconductor memory and the second semiconductor memory.

A multiple die package is described that has an embedded bridge to connect the dies. One example is a microelectronic package that includes a package substrate, a silicon bridge embedded in the substrate, a first interconnect having a first plurality of contacts at a first location of the silicon bridge, a second interconnect having a second plurality of contacts at a second location of the silicon bridge, a third interconnect having a third plurality of contacts at a third location of the silicon bridge, and an electrically conductive line in the silicon bridge connecting a contact of the first interconnect, a contact of the second interconnect, and a contact of the third interconnect each to each other.

A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Embodiments of the present disclosure provide a microelectronic assembly comprising: a first integrated circuit (IC) die in a first layer; an interposer in a second layer not coplanar with the first layer, the first layer coupled to the second layer by interconnects having a pitch of less than 10 micrometers between adjacent interconnects; and a first conductive pathway and a second conductive pathway in the interposer coupling the first IC die and a second IC die. The first IC die is configured to transmit at a first supply voltage through the first conductive pathway to a second IC die, the second IC die is configured to transmit to the first IC die through the second conductive pathway at a second supply voltage simultaneously with the first die transmitting at the first supply voltage, and the first supply voltage is different from the second supply voltage.

An electronic structure, an electronic package and a manufacturing method thereof are provided, in which a carrier and an adhesive layer are used to support or fix the electronic structure and the electronic package, and double carriers are used to support or fix the electronic structure and the electronic package, thereby avoiding the warpage problem of the electronic structure and the electronic package.