A chip package structure includes an assembly containing an interposer and semiconductor dies; a packaging substrate attached to the assembly through solder material portions; and a lid structure attached to the packaging substrate. The lid structure includes: a first plate portion having a first thickness and located in an interposer-projection region having an areal overlap with the interposer in a plan view; a second plate portion having a second thickness that is less than the first thickness, laterally surrounding, and adjoined to, the first plate portion, and located outside the interposer-projection region; and a plurality of foot portions adjoined to the second plate portion, laterally spaced from the first plate portion, and attached to a respective top surface segment of the packaging substrate through a respective adhesive portion.

A semiconductor device has a first semiconductor package, second semiconductor package, and RDL. The first semiconductor package is disposed over a first surface of the RDL and the second semiconductor package is disposed over a second surface of the RDL opposite the first surface of the RDL. A carrier is initially disposed over the second surface of the RDL and removed after disposing the first semiconductor package over the first surface of the RDL. The first semiconductor package has a substrate, plurality of conductive pillars formed over the substrate, electrical component disposed over the substrate, and encapsulant deposited around the conductive pillars and electrical component. A shielding frame can be disposed around the electrical component. An antenna can be disposed over the first semiconductor package. A portion of the encapsulant is removed to planarize a surface of the encapsulant and expose the conductive pillars.

An electronic device package and method of fabricating such a package includes a first and second components encapsulated in a volume of molding material. A surface of the first component is bonded to a surface of the second component. Upper and lower sets of redistribution lowers that include, respectively, first and second sets of conductive interconnects are formed on opposite sides of the molding material. A through-package interconnect passes through the volume of molding material and has ends that terminate, respectively, within the upper set of redistribution layers and within the lower set of redistribution layers.

A semiconductor structure includes an interposer including redistribution wiring interconnects and redistribution insulating layers; a first semiconductor die attached to the interposer through a first array of solder material portions; and a second semiconductor die attached to the interposer through a second array of solder material portions. The interposer includes at least one inductor structure located between an area of the first array of solder material portions and an area of the second array of solder material portions in a plan view and laterally encloses a respective area in the plan view.

A power block of a power converter includes a first substrate, a second substrate, and an inductor unit between the first and second substrates. Power stage integrated circuits (ICs) are disposed on the first substrate. A set of capacitors is disposed on a bottom side of the first substrate and another set of capacitors is disposed on a topside of the second substrate. The inductor unit has a magnetic core. Embedded within the magnetic core are inductors or transformers of the power converter. The power block can be used together with other power blocks to form a power module with additional output phases.

A method includes forming an interconnect structure and an interposer. The interconnect structure comprises a first plurality of redistribution lines, and a wafer seal ring encircling the first plurality of redistribution lines. The interposer comprises a second plurality of redistribution lines, and a plurality of die seal rings encircling the second plurality of redistribution lines. The method includes bonding a first plurality of package components to the interposer, and bonding a second plurality of package components to the interconnect structure. The first plurality of package components are electrically connected to the second plurality of package components through the interposer and the interconnect structure.

A semiconductor package including a package substrate defining a cavity therein; a first semiconductor chip on the package substrate; a first bump between the package substrate and the first semiconductor chip, the first bump electrically connecting the package substrate and the first semiconductor chip; a second semiconductor chip on the package substrate, the second semiconductor chip being at least partially in the cavity; a first bonding wire electrically connecting the package substrate and the second semiconductor chip; and an underfill layer covering the first bump and at least a portion of the first bonding wire.

A photonic chip structure may include: an electronic integrated circuit chip; a connection terminal connected to the electronic integrated circuit chip; an optical integrated circuit chip under the electronic integrated circuit chip and the connection terminal in a vertical direction and including a photonic integrated circuit (PIC) connection pad and a first PIC insulating layer on the PIC connection pad, the PIC connection pad connected to the connection terminal; and an optical block spaced apart from the electronic integrated circuit chip in a horizontal direction and configured to provide a path for optical signals to the optical integrated circuit chip, wherein the first PIC insulating layer includes a first cavity, and the optical block is in the first cavity.

A package comprising a first substrate; an integrated device coupled to the first substrate, wherein the integrated device comprises a plurality of back side metallization interconnects; and a second substrate coupled to the first substrate through a first plurality of solder interconnects, wherein the second substrate is coupled to the plurality of back side metallization interconnects through the second plurality of solder interconnects.

A quantum device includes a quantum chip, an interposer including a first wiring layer over which the quantum chip is mounted, a socket disposed to face the first wiring layer and including a plurality of terminals, and a board having a second wiring layer facing the first wiring layer. Each of the plurality of terminals electrically connects the first wiring layer and the second wiring layer, the socket includes a recessed unit housing the quantum chip, and the recessed unit has a first metal surface covering at least a part of the quantum chip.