A three-dimensional (3D) laminated chip that includes a first semiconductor chip including a first through electrode disposed therein. A second semiconductor chip is arranged horizontally adjacent to the first semiconductor chip. A third semiconductor chip is arranged on the first semiconductor chip and the second semiconductor chip. A size of the third semiconductor chip is greater than a size of the first semiconductor chip.

A semiconductor device includes: a first chip including a plurality of first device features and a plurality of first interconnect structures disposed above the first device features; a second chip including a plurality of second device features and a plurality of second interconnect structures disposed above the second device features; and an interposer bonded to the first chip and the second chip, and disposed opposite the first and second device features from the first and second interconnect structures; wherein the interposer includes a plurality of power rails configured to deliver power to the first and second chips.

A semiconductor package includes a package substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness, and an interposer module mounted on the upper surface layer of the package substrate in the second surface area. The semiconductor package may also include an interposer including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness. The semiconductor package may also include an printed circuit board substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness.

Various embodiments of the teachings herein include a sintered power electronic module with a first plane and a second plane different from the first plane. An example comprises: a first substrate with a first metallization arranged on the first plane; a second substrate with a second metallization arranged on the second plane; a switchable die having a first power terminal and a second power terminal, the die arranged between the first substrate and the second substrate; and a surface area of all the sintered connections of the first plane is between 90 and 110% of a surface area of all the sintered connections of the second plane. The first power terminal of the die is joined to the first metallization via a sintered connection in the first plane and the second power terminal is joined to the second metallization via a sintered connection in the second plane.

An embodiment semiconductor device may include a semiconductor die; one or more redistribution layers formed on a surface of the semiconductor die and electrically coupled to the semiconductor die; and an active or passive electrical device electrically coupled to the one or more redistribution layers. The active or passive electrical device may include a silicon substrate and a through-silicon-via formed in the silicon substrate. The active or passive electrical device may be configured as an integrated passive device including a deep trench capacitor or as a local silicon interconnect. The semiconductor device may further include a molding material matrix formed on a surface of the one or more redistribution layers such that the molding material matrix partially or completely surrounds the active or passive electrical device.

A semiconductor die includes semiconductor devices located on a semiconductor substrate, metal-insulator-metal corner structures overlying the semiconductor devices and located in corner regions of the semiconductor die. Metal-insulator-metal corner structures are located in the corner regions of the semiconductor die. Each of the metal-insulator-metal corner structures has a horizontal cross-sectional shape selected from a triangular shape and a polygonal shape including a pair of laterally-extending strips extending along two horizontal directions that are perpendicular to each other and connected to each other by a connecting shape.

The semiconductor package structure may include a support substrate, a chip stack body on a central region of the support substrate and including a plurality of chips; a first interface on a first edge region of the support substrate and a first redistribution layer on the first interface; a second interface on a second edge region and a second redistribution layer on the second interface; a bonding wire electrically connecting the plurality of chips to the first redistribution layer and the second redistribution layer, respectively; a dummy chip on the chip stack body; and an encapsulation layer, packaging the chip stack body, the dummy chip, the first interface, the second interface and the bonding wire, wherein an upper surface of the dummy chip is coplanar with an upper surface of the encapsulation layer, and external connection terminals on the first redistribution layer and the second redistribution layer.

Provided is an electronic device, in which a first management module of a first chiplet generates a first request transaction for measuring a latency between the first chiplet and a second chiplet, and transmits the generated first request transaction to the second chiplet through a first interconnect module of the first chiplet, a second management module of the second chiplet generates a first response transaction corresponding to the first request transaction, and transmits the generated first response transaction to the first chiplet through a second interconnect module of the second chiplet, and the latency between the first chiplet and the second chiplet is determined based on a first time at which the first request transaction is generated in the first chiplet and a second time at which the first chiplet receives the first response transaction.

A semiconductor package component which has an outer profile including an oblique package edge obliquely interconnecting between two adjacent side walls. The semiconductor package component includes a first redistribution layer (RDL) unit, a chip unit, a dummy die unit, an encapsulation layer, and a second RDL unit. The chip unit is disposed on the first RDL unit. The dummy die unit includes a dummy die that is disposed on the first RDL unit, and has a dummy die edge which extends in a direction parallel to the oblique package edge. A method for making the semiconductor package component is also disclosed.

A semiconductor package may include a first redistribution substrate, a first semiconductor device on the first redistribution substrate, through posts on the first redistribution substrate so as to be adjacent to the first semiconductor device, a second redistribution substrate on the first semiconductor device and the through posts, a second semiconductor device on the second redistribution substrate, and a heat-dissipating block on the second redistribution substrate so as to be adjacent to the second semiconductor device. The heat-dissipating block may include a recessed portion at a center portion of a lower surface thereof. The heat-dissipating block may be coupled to the second redistribution substrate through an adhesive layer filling the recessed portion.