Disclosed embodiments include methods, apparatuses, integrated circuits, and circuit boards for power conversion with reduced parasitics. The apparatuses include an integrated circuit for power conversion. The integrated circuit includes a plurality of power transistors and a plurality of metal regions coupled to the power transistors. A first portion of the metal regions are coupled to source regions of the power transistors. A second portion of the metal regions are coupled to drain regions of the power transistors. The first and second portions have at least one of substantially equal numbers of metal regions, substantially equal resistances, or balanced distributions of metal regions.

A semiconductor package includes a laminate package body and a die assembly embedded within the laminate package body. The laminate package body includes a plurality of laminate dielectric layers stacked on top of one another and metallization layers interposed between the laminate dielectric layers. The die assembly includes a thermally conductive substrate that includes a planar upper surface, a semiconductor die mounted on the planar upper surface of the thermally conductive substrate, and an electrically insulating thickness-matching layer formed on the planar upper surface of the thermally conductive substrate and surrounding the semiconductor die. An upper surface of the electrically insulating thickness-matching layer is substantially coplanar with an upper surface of the semiconductor die. The upper surface of the electrically insulating thickness-matching layer and the upper surface of the semiconductor die form an upper surface of the die assembly.

A semiconductor device includes a backside contact, a shallow trench isolation (STI), and a backside dielectric trench isolation (BDTI) below the STI. A top surface of the BDTI is connected to the STI on a backside of a high voltage region of the semiconductor device, a bottom surface of the BDTI is connected to a backside power interconnect, and the BDTI isolates a backside contact from a substrate.

A method for manufacturing a semiconductor structure includes: forming first conducting portions that are spaced apart from each other on a base structure; forming isolation elements, each of which includes a dielectric lower portion and an etching-resistant upper portion covering the dielectric lower portion, the etching-resistant upper portion being made of an etching-resistant material different from a dielectric material of the dielectric lower portion, each of the isolation elements being isolated and exposed from two adjacent ones of the first conducting portions; sequentially forming an etch stop layer and an interlayer dielectric over the first conducting portions and the isolation elements; forming a cavity which extends through the etch stop layer and the interlayer dielectric, and which exposes one of the first conducting portions; and filling the cavity with a second conducting portion.

A method for manufacturing a semiconductor device includes: forming a first interconnect structure over a substrate, the first interconnect structure including a first conductive feature; forming a resistor structure over the first conductive feature; forming a second interconnect structure on the resistor structure, the second interconnect structure including two second conductive features which are spaced apart from each other and which are electrically connected to the resistor structure; forming a third interconnect structure on the second interconnect structure, the third interconnect structure including two third conductive features which are spaced apart from each other and which are electrically connected to the two second conductive features, respectively; and forming a capacitor structure over the resistor structure such that the capacitor structure is disposed between the two third conductive features.

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate and a transistor in the substrate. The transistor includes a gate structure penetrating through the substrate, a first source/drain region at a front side of the substrate, and a second source/drain region at a back side of the substrate.

A structure includes at least one ball, at least one bump and at least one route. The at least one route is configured to couple the at least one ball to the at least one bump. The at least one route comprises a plurality of first route edges and a plurality of second route edges, and an angle between one of plurality of first route edges and one of plurality of second route edges is approximately equal to an angle between another one of plurality of first route edges and another one of plurality of second route edges.

A semiconductor device comprises a first transistor structure comprising a first gate region and a second gate region, a first dielectric layer disposed between the first gate region and the second gate region, a second transistor structure stacked on the first transistor structure and comprising a third gate region and a fourth gate region, and a second dielectric layer disposed between the third gate region and the fourth gate region. A conductive via is disposed through at least one of the first dielectric layer and the second dielectric layer, wherein at least one of the first gate region and the second gate region are electrically connected to at least one of the third gate region and the fourth gate region by the conductive via.

A method of manufacturing a semiconductor device comprising: forming a first layer in which first conductive patterns and first dielectric patterns are alternately arranged; forming passivation layers on the first conductive patterns, respectively; and forming second dielectric patterns on the first dielectric patterns, respectively, by an area-selective atomic layer deposition at a first temperature, wherein the first temperature is 350 C. or less, wherein the area-selective atomic layer deposition includes: pulsing a metal catalyst; performing a primary purge by a purge gas; sub-pulsing a reaction precursor at least once; and performing a secondary purge by the purge gas after each of the sub-pulsing.

A chip includes a semiconductor substrate, integrated circuits with at least portions in the semiconductor substrate, and a surface dielectric layer over the integrated circuits. A plurality of metal pads is distributed substantially uniformly throughout substantially an entirety of a surface of the chip. The plurality of metal pads has top surfaces level with a top surface of the surface dielectric layer. The plurality of metal pads includes active metal pads and dummy metal pads. The active metal pads are electrically coupled to the integrated circuits. The dummy metal pads are electrically decoupled from the integrated circuits.