A semiconductor package includes a first substrate and a first semiconductor device. The first semiconductor device is bonded to the first substrate and includes a second substrate, a plurality of first dies and a second die. The first dies are disposed between the first substrate and the second substrate. The second die is surrounded by the first dies. A cavity is formed among the first dies, the first substrate and the second substrate, and a gap is formed between the second die and the first substrate.

A die assembly is disclosed. The die assembly includes a die, one or more die pads on a first surface of the die and a die attach film on the die where the die attach film includes one or more openings that expose the one or more die pads and that extend to one or more edges of the die.

A method of manufacturing a three-dimensional system-on-chip, comprising providing a memory wafer structure with a first redistribution layer; disposing a first conductive structure and a core die structure and an input/output die structure with a second conductive structure on the first redistribution layer, the input/output die structure being disposed around the core die structure; forming a dielectric layer covering the core die structure, the input/output die structure, and the first conductive structure; removing a part of the dielectric layer and thinning the core die structure and a plurality of input/output die structures to expose the first and second conductive structures; forming a third redistribution layer on the dielectric layer, the third redistribution layer being electrically connected to the first and second conductive structures; forming a plurality of solder balls on the third redistribution layer; performing die saw. A three-dimensional system-on-chip is further provided.

A chip package and a method of manufacturing the same are provided. The chip package includes at least one insulating protective layer disposed on a periphery of a surface of a seed layer correspondingly. A plurality of insulating protective layers is arranged at the seed layer of a plurality of rectangular chips of a wafer and located corresponding to a plurality of dicing streets. Thereby cutting tools only cut the insulating protective layer, without cutting a thick metal layer during cutting process. The insulating protective layer is formed on a periphery of the thick metal layer of the chip package after the cutting process.

A semiconductor device includes a support member, a semiconductor element and a sealing member. The semiconductor element is disposed on a first side in a thickness direction relative to the support member. The sealing member covers a part of the support member and the semiconductor element. The support member has a first surface facing a second side in the thickness direction and exposed from the sealing member. The first surface is formed with a first uneven region. In an example, the first uneven region has an arithmetic mean roughness between 0.2 m and 13 m. In an example, the first uneven region includes a plurality of uneven lines in an arc shape.

An integrated circuit package includes a leadframe with leads delimiting a center cavity. The leads of the leadframe have upper surfaces with a surface texture or finish having a first surface roughness. A drop-in die pad is installed within the center cavity. The drop-in die pad has an upper surface with a surface texture or finish having a second surface roughness that is rougher than the first surface roughness. An integrated circuit die is mounted to the upper surface of the drop-in die pad and electrical connections are formed between bonding pads of the integrated circuit die and the leads of the leadframe. An encapsulation body encapsulates the leadframe, drop-in die pad and electrical connections.

An electronic package and a manufacturing method thereof are provided. A semiconductor component and an optoelectronic component are provided on a carrier structure. The optoelectronic component is covered with a shielding layer, and an encapsulation layer is formed to cover the semiconductor component and the optoelectronic component. The shielding layer is removed to expose the optoelectronic component, allowing subsequent connection of an optical device on the optoelectronic component. The process of the Co-packaged optics module is simplified.

A package is provided. The package includes an electronic chip and at least one magnesium hydroxide layer (Mg(OH).sub.2) over the electronic chip. A method of forming the package is also described.

A power semiconductor package includes: a metal plate having opposing first and second sides; a lateral wall extending along a rim of the first side of the metal plate and surrounding an inner portion of the first side; at least one die carrier arranged over the inner portion of the first side of the metal plate; a power semiconductor die arranged over and electrically coupled to the die carrier, the die carrier electrically isolating the power semiconductor die from the metal plate; and a printed circuit board (PCB) arranged over the lateral wall and covering the inner portion of the first side of the metal plate such that the die carrier and the power semiconductor die are arranged within an interior volume of the power semiconductor package encapsulated by the inner portion of the first side of the metal plate, the lateral wall and the PCB.

Systems and methods are provided for three-dimensional (3-D) stacking of semiconductor dies in a face-to-back staggered pattern, enabling high-density integration and improved electrical performance in semiconductor assemblies. In one example, hybrid bonding techniques, which incorporate both electrical and mechanical connections, are employed to reliably bond semiconductor die in multiple layers with precise alignment.