A semiconductor device includes a support including a base member having a first main surface facing a thickness direction, a semiconductor element, and a bonding material that bonds the support and the semiconductor element. The bonding material includes a sintered metal portion and a resin portion. The support includes a metal layer located on the first main surface and having a stronger sintered bonding with the sintered metal portion than the base member. The bonding material includes a first portion in contact with the semiconductor element and the metal layer, and a second portion in contact with the semiconductor element and the base member.

A semiconductor device includes a substrate having a first surface, a second surface, and an opening; a semiconductor device layer having a third surface and a fourth surface; a heat transfer member; source electrodes disposed on a fourth surface; and electrically conductive vias that penetrate the semiconductor device layer and a diamond layer to electrically connect the source electrodes to a metal layer. The heat transfer member includes the diamond layer and the metal layer, the diamond layer covers a bottom surface and an inner wall surface of the opening, and the metal layer is disposed on the diamond layer.

A switching module includes at least one substrate, at least one switching element, at least one control loop, a first power part and a second power part. The at least one switching element is disposed on the at least one substrate. The at least one control loop is connected with the corresponding switching element. The first power part is connected with the corresponding switching element. The second power part is connected with the corresponding switching element. A direction of a first current flowing through the first power part and a direction of a second current flowing through the second power part are identical. A projection of the first power part on a reference plane and a projection of the second power part on the reference plane are located at two opposite sides of a projection of the control loop on the reference plane.

A semiconductor module, including a semiconductor chip, a sealed main body portion sealing the semiconductor chip and having a pair of attachment holes penetrating therethrough, a heat dissipation plate in contact with the sealed main body portion. The heat dissipation plate is positioned between the attachment holes in a plan view of the semiconductor module. The semiconductor module further includes a pair of rear surface supporting portions and/or a pair of front surface supporting portions protruding respectively from rear and front surfaces of the sealed main body portion. In the plan view, the heat dissipation plate is formed between the pair of attachment holes, which are in turn between the pair of rear surface supporting portions. The pair of front surface supporting portions are formed substantially between the pair of attachment holes in the plan view.

A semiconductor device includes a power semiconductor element, and a molding resin sealing the power semiconductor element. In plan view, the molding resin has a rectangular shape consisting of a first side and a second side extending along a first direction, and a third side and a fourth side extending along a second direction orthogonal to the first direction. The first side is longer than the third side. The molding resin is provided with a first threaded bore and a second threaded bore, the first threaded bore and the second threaded bore penetrating the molding resin along a third direction orthogonal to the first direction and the second direction.

A package construction includes: a die pad, and a suspension lead remaining portion connected to the die pad. Here, an offset portion is provided from a peripheral edge portion of the die pad to the suspension lead remaining portion. Also, the suspension lead remaining portion has: a first end portion connected to the die pad, and a second end portion opposite the first end portion. Further, the second end portion of the suspension lead remaining portion is exposed from the side surface of the sealing body at a position spaced apart from each of the upper surface and the lower surface.

A laminated wiring has a first conductor which connects first terminals of one or more capacitors and each positive terminal of a plurality of semiconductor modules, a second conductor which connects second terminals of the one or more capacitors and each negative terminal of the plurality of semiconductor modules, and an insulator. Slits are cut in at least one of the first conductor and the second conductor (in both of them in the example of FIG. 1). By doing so, among the plurality of semiconductor modules, a variation in the total of respective inductance values between respective first terminals and one positive terminal closest to the respective first terminals and respective inductance values between respective negative terminals to one second terminal closest to the respective negative terminals becomes smaller than or equal to 10 nH.

A semiconductor device according to one aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and extends in a direction forming an angle of 30 to 30 with respect to the first direction. A semiconductor device according to another aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and has a joint portion that is long in one direction in plan view and an angle of a long direction of the joint portion with respect to the first direction is 30 to 30.

A power semiconductor module includes an AC bus bar having a first side that faces a first substrate and a second side that faces a second substrate. A first power transistor die has a drain terminal connected to a first metallic region of the first substrate and a source terminal connected to the first side of the AC bus bar. A second power transistor die has a drain terminal connected to the second side of the AC bus bar and a source terminal connected to a first metallic region of the second substrate. First and second DC bus bars are connected to the first metallic region of the respective substrates, vertically overlap one another, and protrude from a first side of a mold body that encapsulates the power transistor dies. The AC bus bar protrudes from a different side of the mold body as the DC bus bars.

A semiconductor device includes a semiconductor chip having first and second main electrodes disposed on opposite surfaces of a silicon carbide substrate, first and second heat dissipation members disposed so as to sandwich the semiconductor chip, and joining members disposed between the first main electrode and the first heat dissipation member and between the second main electrode and the second heat dissipation member. At least one of the joining members is made of a lead-free solder having an alloy composition that contains 3.2 to 3.8 mass % Ag, 0.6 to 0.8 mass % Cu, 0.01 to 0.2 mass % Ni, x mass % Sb, y mass % Bi, 0.001 to 0.3 mass % Co, 0.001 to 0.2 mass % P, and a balance of Sn, where x and y satisfy relational expressions of x+2y11 mass %, x+14y42 mass %, and x5.1 mass %.