Embedded die packaging for semiconductor power switching devices, wherein the package comprises a laminated body comprising a layer stack of a plurality of dielectric layers and conductive metal layers. A thermal contact area on a back-side of the die is attached to a leadframe. A patterned layer of conductive metallization on a front-side of the die provides electrical contact areas of the power semiconductor device. Before embedding, a protective dielectric layer is provided on the front-side of the die, extending around edges of the die. The protective dielectric layer provides a protective region that acts a cushion to protect edges of the die from damage during lamination. The protective dielectric material may extend over the electrical contact areas to protect against etch damage and damage during laser drilling of vias, thereby mitigating physical damage, overheating or other potential damage to the active region of the semiconductor device.

A sand blasting fixture is used to allow a half-etched elongated slit of a lead frame to be processed a sandblasting operation, and includes a lower mold, an upper mold and a positioning component. The lower mold includes a lower cover plate. The upper mold includes an upper cover plate and a sandblasting elongated hole. The upper cover plate is removably covered by the lower cover plate, the sandblasting elongated hole is penetrated through the upper cover plate, and featured with the same appearance with the half-etched elongated slit. The positioning component is connected to the upper cover plate for fixing the lead frame on the upper cover plate so that the upper cover plate is allowed to completely cover one surface of the lead frame and the half-etched elongated slit is completely overlapped and exposes from the sandblasting elongated hole of the upper cover plate.

In one example, a semiconductor device includes a conductive structure having a conductive structure upper side. A roughening is on the conductive structure upper side and a groove is in the conductive structure extending partially into the conductive structure from the conductive structure upper side. An electronic component is attached to the conductive structure upper side with an attachment film. An encapsulant covers the electronic component, at least portions of the roughening, and at least portions of the conductive structure upper side. The groove has smoothed sidewalls that include substantially planarized portions of the roughening. The smooth sidewalls reduce flow of the attachment film across the conductive structure upper side to improve adhesion of the encapsulant to the conductive structure. Other examples and related methods are also disclosed herein.

A semiconductor device comprising a terminal, a semiconductor element and a sealing resin. The semiconductor element is disposed on one side of the terminal in a first direction and electrically connected to the terminal. The sealing resin covers the semiconductor element and a part of the terminal. The sealing resin has a bottom surface disposed on an opposite side to the semiconductor element with respect to the terminal in the first direction. The terminal extends beyond the bottom surface.

An electronics assembly includes a plurality of planar conductive metal sheets including a first conductive metal sheet, a second conductive metal sheet attached and electrically coupled to the first metal sheet, and a third conductive metal sheet attached and electrically coupled to the second metal sheet. The second metal sheet is located between the first and third conductive metal sheets. Air gaps are defined in the plurality of planar conductive metal sheets to form metal traces that define electrically isolated conductive paths from an outer surface of the first conductive metal sheet to an outer surface of the third conductive metal sheet in a multilevel conductive wiring network. The multilevel conductive wiring network can be attached and electrically coupled to a microchip and to one or more capacitors to form a power converter.

In one example, an electronic device, comprises a substrate comprising a first side and a second side opposite to the first side, wherein the substrate comprises dimples on the first side of the substrate, an electronic component over the first side of the substrate, an encapsulant over the first side of the substrate and covering a lateral side of the electronic component, and a first interconnect in the encapsulant and coupled to the electronic component and the substrate. Other examples and related methods are also disclosed herein.

The present disclosure is directed to semiconductor packages manufactured utilizing a leadframe with varying thicknesses. The leadframe with varying thicknesses has a reduced likelihood of deformation while being handled during the manufacturing of the semiconductor packages as well as when being handled during a shipping process. The method of manufacturing is not required to utilize a leadframe tape based on the leadframe with varying thicknesses. This reduces the overall manufacturing costs of the semiconductor packages due to the reduced materials and steps in manufacturing the semiconductor packages as compared to a method that utilizes a leadframe tape to support a leadframe. The semiconductor packages may include leads of varying thicknesses formed by utilizing the leadframe of varying thicknesses to manufacture the semiconductor packages.

A package includes a first carrier including a component mounting area, a second carrier including at least one lead section, at least one electronic component mounted on the component mounting area, and an encapsulant encapsulating at least part of the at least one electronic component, encapsulating at least part of the first carrier including encapsulating the entire sidewalls of the first carrier, and encapsulating part of the second carrier, wherein the first carrier is assembled with the second carrier so that the at least one electronic component and/or the first carrier is electrically connected with the at least one lead section, and wherein the first carrier has a first thickness and the second carrier has a second thickness being smaller than the first thickness.

A pre-molded leadframe includes a laminar structure having empty spaces therein and a first thickness with a die pad having opposed first and second die pad surfaces. Insulating pre-mold material is molded onto the laminar structure. The pre-mold material penetrates the empty spaces and provides a laminar pre-molded substrate having the first thickness with the first die pad surface left exposed. The die pad has a second thickness that is less than the first thickness. One or more pillar formations are provided protruding from the second die pad surface to a height equal to a difference between the first and second thicknesses. With the laminar structure clamped between surfaces of a mold, the first die pad surface and pillar formations abut against the mold surfaces. The die pad is thus effectively clamped between the clamping surfaces countering undesired flashing of the pre-mold material over the first die pad surface.

A method of forming a lead frame can include: providing a frame base; providing a substrate to support the frame base; and selectively etching the frame base to form first and second type pins. The first type pins are distributed in the central area of the lead frame, and the second type of the pins are distributed in the edge area of the lead frame. The first type pins are separated from the second type of the pins, and the first and second type pins are not connected by connecting bars. A pattern of a first surface of the first and second type pins is different from that of a second surface of the first and second type pins. The metal of the first surface is different from the metal of the second surface, and the second surface is opposite to the first surface.