Provided is a semiconductor package including a substrate including a body having a first surface and a second surface, the first surface and the second surface opposite to each other, a plurality of interconnection patterns arranged in a vertical direction within the body, the plurality of interconnection patterns including upper terminals on the first surface and lower terminals on the second surface, and an induction heating structure within the body, and the induction heating structure spaced apart from the plurality of interconnection patterns, an upper protective layer on the first surface of the substrate and the upper protective layer including first openings respectively exposing the upper terminals, a semiconductor chip on the upper protective layer, and the semiconductor chip including connection pads.

Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.

A semiconductor package is provided and includes: a base substrate; an interposer package on the base substrate; and first and second semiconductor chips on the interposer package, wherein the interposer package includes: a first redistribution structure including a first insulating layer, a second insulating layer on the first insulating layer, and first and second redistribution layers respectively disposed on the first and second insulating layers; a bridge chip on a bottom surface of the first redistribution structure; a connection structure on the bottom surface of the first redistribution structure and including a plurality of wiring layers electrically connected to the first and second semiconductor chips; and a bonding structure disposed on a third insulating layer on the second insulating layer and bonding each of the first and second semiconductor chips to the first redistribution structure, wherein the second redistribution layer includes a contact plug within the third insulating layer.

A die substrate, including a dielectric body, the body having a first body surface, a second body surface on an opposite side and body edge surfaces located in between. Current-carrying metal lines located in the dielectric body. One or more of the metal lines routed to one or more of the body edge surfaces. A termination layer located on the at least one body edge surface and electrically connected to the least one of the metal lines routed to the body edge surfaces. Electrically conductive plating located on the at least one body edge surface. The plating connected to the termination layer for an electrical current connection or a ground connection to the at least one metal line. A method of manufacturing an integrated circuit package, the package and a computer having the die substrate are also disclosed.

A package structure and method for forming the same are provided. The package structure includes a substrate having a front surface and a back surface, and a die formed on the back surface of the substrate. The package structure includes a first through via structure formed in the substrate, a conductive structure formed in a passivation layer) over the front surface of the substrate. The conductive structure includes a via portion in direct contact with the substrate. The package structure includes a connector (formed over the via portion, wherein the connector includes an extending portion directly on a recessed top surface of the via portion.

A method of dispensing an underfill material on a semiconductor device package. A substrate having a semiconductor chip electrically connected thereto and offset from the substrate by solder joints is provided. The semiconductor chip has a footprint defined by a length and width of the semiconductor chip. Standoff heights between the substrate and the semiconductor chip are calculated and used to determine a volume of underfill material needed to substantially fill a space between the substrate and the semiconductor chip. The determined volume of underfill material is dispensed on the substrate such that the space between the substrate and the semiconductor chip is substantially filled by the underfill material. The method may allow for improved dispensing an underfill material to substantially fill the space between the substrate and semiconductor chip when variations in standoff height are present.

The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

A method for fabricating a package structure is provided. The method includes forming a metal layer over a carrier substrate. The method includes forming a dielectric layer over the metal layer. The method includes forming a plurality of first openings in the dielectric layer. The method includes forming a plurality of second openings in the dielectric layer. The first openings and the second openings expose the metal layer. The method includes forming a conductive material in the first openings and the second openings to form a plurality of conductive features. The method includes removing the metal layer and the carrier substrate. The method includes thinning the dielectric layer around the conductive features. The method also includes bonding a package component to the conductive features.

A semiconductor package may include a package substrate; first semiconductor chips sequentially stacked on an upper surface of the package substrate; a second semiconductor chip on an uppermost first semiconductor chip among the first semiconductor chips, the second semiconductor chip having an overhang region protruding from one side of the uppermost first semiconductor chip and an overlapping region overlapping the uppermost first semiconductor chip, the second chip pads including first bonding pads in the overhang region and second bonding pads in the overlapping region; first conductive bumps respectively on the first bonding pads; second conductive bumps respectively on the second bonding pads; vertical wires extending from the first conductive bumps to substrate pads of the package substrate, respectively; and a molding member covering the first semiconductor chips, the second semiconductor chip, and the vertical wires.

A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.