Disclosed herein is a method for manufacturing a semiconductor comprising mechanically connecting one or more separate semiconductor components to a common intermediate carrier, arranging the intermediate carrier with respect to a substrate so that, at least for a majority of the semiconductor components, at least one solder pad of a particular semiconductor component lies opposite a solder pad of the substrate associated therewith forming a solder joint, and connecting mutually associated solder pads of the one or more semiconductor components and the substrate by melting and solidifying a solder material arranged between the mutually associated solder pads. A surface tension of the solder material between the mutually associated solder pads of the substrate and the one or more semiconductor components sets a predetermined position of the intermediate carrier relative to the substrate, in which the one or more semiconductor components assume a target position relative to the substrate.

An exemplary hearing device includes a housing and a chip package disposed within the housing. The chip package may comprise a printed circuit board, an integrated circuit configured to perform an electronic function associated with the hearing device, and a plurality of solder bumps on a bottom surface of the integrated circuit. The plurality of solder bumps may provide conductive connectivity between the integrated circuit and the printed circuit board. The plurality of solder bumps may comprise a first group of solder bumps located within a center region of the bottom surface of the integrated circuit and a second group of solder bumps located within a peripheral region of the bottom surface, the peripheral region surrounding the center region. All signals required for the integrated circuit to perform the electronic function may be provided by way of the first group of solder bumps.

Devices and methods for forming a chip package structure including a package substrate, a first adhesive layer attached to a top surface of the package substrate, and a beveled stiffener structure attached to the package substrate. The beveled stiffener structure may include a bottom portion including a tapered top surface, in which a bottom surface of the bottom portion is in contact with the first adhesive layer, a second adhesive layer attached to the tapered top surface, and a top portion including a tapered bottom surface, in which the tapered bottom surface is in contact with the second adhesive layer. The tapered top surface and the tapered bottom surface have a taper angle between 5 degrees and 60 degrees with respect to a top surface of the package substrate.

Described herein are integrated circuit (IC) structures, devices, and methods associated with device layer interconnects. For example, an IC die may include a device layer including a transistor array along a semiconductor fin, and a device layer interconnect in the transistor array, wherein the device layer interconnect is in electrical contact with multiple different source/drain regions of the transistor array.

The present disclosure provides an electronic device, which includes an encapsulant, an electronic component, an antenna structure, and a first conductive element. The electronic component is disposed in the encapsulant. The antenna structure has an antenna pattern exposed to air and facing the encapsulant, and a first supporting element separating the antenna pattern from the encapsulant. At least a portion of the first conductive element is within the encapsulant, and electrically connects the antenna pattern to the electronic component by the first supporting element.

An IC die includes a temperature control element suitable for three-dimensional IC package with enhanced thermal control and management. The temperature control element may be formed as an integral part of an IC die that may assist temperature control of the IC die when in operation. The temperature control element may include a heat dissipation material disposed therein to assist dissipating thermal energy generated by the plurality of devices in the IC die during operation.

In one example, an electronic device comprises a substrate comprising a conductive structure and a dielectric structure, the dielectric structure comprising an upper dielectric layer, an electronic component over a top side of the substrate and coupled with the conductive structure, an encapsulant over the top side of the substrate and adjacent a lateral side of the electronic component, and a shield over the top side of the electronic component and contacting a lateral side of the encapsulant and a first lateral side of the substrate. The conductive structure comprises a first tab structure at the first lateral side of the substrate, and wherein the first tab structure contacts the shield and extends above the upper dielectric layer. Other examples and related methods are also disclosed herein.

An interconnected semicondcutor subassembly structure and formation thereof. The interconnected semicondcutor subassembly structure includes an interconnect structure, and first and second semicondcutor dies bonded to respective portions of a top surface of the interconnect structure. The interconnected semicondcutor subassembly structure further includes an underfill layer formed within a first gap located between a bottom surface of the first semiconductor die and the first portion the top surface of the interconnect structure, formed within a second gap located between the bottom surface of the second semiconductor die and the second portion of the top surface of the interconnect structure, and formed within a first portion of a third gap located between the first semicondcutor die and the second semicondcutor die. A top surface of the underfill layer formed within the first portion of the third gap located between the first and second semicondcutor dies has a concave meniscus shape.

A method of manufacturing a semiconductor package of stacked semiconductor chips includes forming a reverse wire bond by bonding one end of a reverse wire to a chip pad of the second-highest semiconductor chip of the stacked semiconductor chips and connecting the other end of the reverse wire to a conductive bump on a chip pad of the uppermost semiconductor chip of the stacked semiconductor chips. The method also includes molding the stacked semiconductor chips with the reverse wire bond using a mold layer. The method further includes processing the mold layer to expose the conductive bump and the other end of the reverse wire in the reverse wire bond through an upper surface of the mold layer.

A package comprises an interposer, comprising an interposer substrate including at least one layer, and a plurality of RDLs formed through at least a portion of the interposer substrate. The package also includes a die device structure comprising at least one device die, and a first test line (TL) structure interposed between the interposer and the die device structure. The first TL structure includes at least one first test line electrically coupled to the at least one device die, at least a portion of the at least one first test line extending beyond a peripheral edge of the die device structure to provide an electrical interface with the at least one device die.