The semiconductor package includes a lower package including a lower package substrate and a lower semiconductor device disposed on the lower package substrate, and an upper package including an upper package substrate disposed on the lower package in a first direction and an upper semiconductor device disposed on the upper package substrate, and the upper package substrate includes a wiring structure on which the upper semiconductor device is mounted, and a heat sink disposed so that at least a portion overlaps the wiring structure in at least one of the first direction and a second direction perpendicular to the first direction and including a heat radiation pattern, wherein the heat radiation pattern comprises an insulator and a heat radiator in a repeated alternating pattern and wherein the lower semiconductor device overlaps at least a portion of the wiring structure and the portion of the heat sink in the first direction.

Provided is a redistribution structure having reduced parasitic capacitance. The redistribution structure may include a via layer and a wiring layer disposed on the via layer in a first direction perpendicular to the via layer, the wiring layer including a metal plate and a first insulation pattern configured to penetrate the metal plate in the first direction. An outer side surface of the first insulation pattern may be exposed from a side surface of the metal plate.

The present disclosure relates to the field of semiconductor packaging technologies, and in particular, to a panel-level chip packaging structure and method based on a steel plate platform. The packaging structure includes: a steel plate; a gold-nickel layer plated on the steel plate, where the gold-nickel layer is provided with upwardly protruding pins corresponding to a chip; the chip flipped to the corresponding pins; and a molded body coating the corresponding chip and the gold-nickel layer. According to the packaging structure and method of the present disclosure, an overall thickness of a chip-packaged product can be reduced. A wire bonding process and an electroplating process are further omitted, so that the overall thickness of chip packaging can be further reduced. An ultra-thin packaging structure can be implemented, the chip packaging efficiency can further be improved, and a complete-process chip packaging cycle can be shortened.

Implementations of a silicon-in-insulator (SOI) semiconductor die may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be included through a silicon layer coupled to a insulative layer.

A semiconductor device assembly can include an assembly substrate having a top surface, a top semiconductor device having a bottom surface, and a plurality of intermediary semiconductor devices. Each of intermediary semiconductor device can be bonded to both the assembly substrate top surface and the top device bottom surface. Each intermediary semiconductor device can also include a semiconductor substrate, a memory array, a first bond pad, a second bond pad, and a conductive column. The first bond pad can electrically couple the assembly substrate to the intermediary semiconductor device; the second bond pad can electrically couple the top semiconductor device to the intermediary semiconductor device; and the conductive column can electrically couple the first bond pad to the second bond pad, and can be exclusive of any electrical connection to the memory array.

A semiconductor device has a first RDL substrate with first conductive pillars formed over a first surface of the first RDL substrate. A first electrical component is disposed over the first surface of the first RDL substrate. A hybrid substrate is bonded to the first RDL substrate. An encapsulant is deposited around the hybrid substrate and first RDL substrate with the first conductive pillars and first electrical component embedded within the encapsulant. A second RDL substrate with second conductive pillars formed over the second RDL substrate and second electrical component disposed over the second RDL substrate can be bonded to the hybrid substrate. A second RDL can be formed over a second surface of the first RDL substrate. A third electrical component is disposed over a second surface of the first RDL substrate. A shielding frame is disposed over the third electrical component.

A semiconductor device has a substrate. A first electrical component and second electrical component are disposed over the substrate. A zero-ohm resistor is disposed over the substrate between the first electrical component and second electrical component. An encapsulant is deposited over the substrate, first electrical component, second electrical component, and first zero-ohm resistor. An opening is formed through the encapsulant to the first zero-ohm resistor. A shielding layer is formed over the encapsulant and into the opening.

A semiconductor device has a sacrificial substrate and an electrical component disposed over the sacrificial substrate. A bump stop layer is formed within the sacrificial substrate. At least a portion of the bump or terminal of the electrical component is embedded into the sacrificial substrate to contact the bump stop layer. An encapsulant is deposited over the electrical component and sacrificial substrate. A channel is formed through the encapsulant and partially into the sacrificial substrate. The sacrificial substrate is removed to leave a bump or terminal of the electrical component extending out from the encapsulant. A thickness of the semiconductor device is determined by a thickness of the encapsulant and bump extending out from the encapsulant. A portion of the encapsulant can be removed to reduce the thickness of the semiconductor device. A conductive paste can be deposited over the bump or terminal extending out from the encapsulant.

A method for forming a pixel package is provided. The method for forming the pixel package includes the following steps: providing a first substrate; transferring a first LED chip and a second LED chip to the first substrate; forming a composite laminate between the first LED chip and the second LED chip; adhering a second substrate to a top surface of the composite laminate; removing the first substrate from back sides of the first LED chip, the second LED chip, and the composite laminate; forming a redistribution layer on the back sides of the first LED chip, the second LED chip, and the composite laminate; and removing the second substrate from the top surface of the composite laminate.

Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.