A semiconductor and a method of fabricating the semiconductor having multiple, interconnected die including: providing a semiconductor substrate having a plurality of disparate die formed within the semiconductor substrate, and a plurality of scribe lines formed between pairs of adjacent die of the plurality of disparate die; and fabricating, by a lithography system, a plurality of inter-die connections that extend between adjacent pair of die of the plurality of die.

A method of manufacturing a semiconductor package includes manufacturing dies on each of wafers, testing the wafers including the dies, calculating total scores for the wafers according to results of the tests, and setting reference values corresponding to semiconductor products. The method also includes classifying, as the semiconductor product, a selected wafer having a total score corresponding to a selected reference value among the reference values. The method further includes packaging the dies included in the selected wafer.

A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

A switching device includes: a switching element; a die pad; a gate terminal; a first power terminal integral with the die pad; and a second power terminal, the gate terminal, the first power terminal, and the second power terminal are located on a side of a first direction of the die pad, the gate terminal, the first power terminal, and the second power terminal are arranged in a second direction orthogonal to the first direction in the following order: the gate terminal, the first power terminal, and the second power terminal or the second power terminal, the first power terminal, and the gate terminal, the switching element includes a first and a second gate pad, the first gate pad is closer to the gate terminal than the second gate pad is, the second gate pad is closer to the second power terminal than the first gate pad is.

A dicing method including the steps of: bonding a first wafer having a first wafer resistivity and a second wafer having a second wafer resistivity higher than the wafer first resistivity, thereby forming a bonded wafer; irradiating the bonded wafer with a laser while varying focal lengths in a thickness direction of the bonded wafer, thereby forming a plurality of modified regions along a dicing line; and dicing the bonded wafer along the dicing line by performing an expansion process on the bonded wafer formed with the modified regions.

Provided is a substrate bonding device in which a risk of substrate damage due to vibration is alleviated, the substrate bonding device including a first chuck configured to support a lower substrate, a second chuck configured to grip an upper substrate facing the lower substrate in a first direction perpendicular to an upper surface of the lower substrate, and a press disposed at a center of the second chuck and configured to push the upper substrate toward the lower substrate in the first direction, and the press includes a first pressurizing part and a second pressurizing part which are spaced apart from each other in the first direction.

An integrated circuit product includes a vertical bridge chiplet that includes through silicon vias (TSVs) to provide power delivery or other system input/output signals to an integrated circuit device. The vertical bridge chiplet and functional chiplets are coupled to the integrated circuit device using vertical interconnect. In an embodiment, the vertical bridge chiplet uses double-sided interconnect to couple system I/O from a package or printed circuit board to the integrated circuit device and reduces or eliminates the need for the integrated circuit device to include TSVs. The vertical bridge chiplet is separately manufactured and may be included in a library of functional chiplets of a modular chiplet system for use with a set of prefabricated integrated circuit devices formed from a semiconductor substrate with a set of chiplet interfaces to serve a variety of system applications without requiring custom silicon devices.

Implementations of a semiconductor package may include a semiconductor die including a first side and a second side, the first side of the semiconductor die including one or more electrical contacts; and an organic material covering at least the first side of the semiconductor die. Implementations may include where the one or more electrical contacts extend through one or more openings in the organic material; a metal-containing layer coupled to the one or more electrical contacts; and one or more slugs coupled to one of a first side of the semiconductor die, a second side of the semiconductor die, or both the first side of the semiconductor die and the second side of the semiconductor die.

A package structure and a manufacturing method thereof are provided. The package structure includes a redistribution layer, a conductive element, an active chip, an encapsulation layer, another redistribution layer, and a conductive terminal. The conductive element, the active chip, and the encapsulation layer are disposed on the redistribution layer and the encapsulation layer surrounds the conductive element and the active chip. The another redistribution layer is disposed on the conductive element, the active chip and the encapsulation layer and electrically connected to the redistribution layer through the conductive element.

Implementations of a method of providing wettable flanks on leads of a semiconductor package may include applying mold compound around a plurality of leads included in a leadframe; electroplating exposed portions of the plurality of leads; cutting at least one lead of the plurality of leads to expose a flank of the least one lead; applying an electrically conductive layer over the plurality of leads; electroplating the flank of the at least one lead to render the flank wettable; removing the electrically conductive layer from the plurality of leads; and singulating to form a semiconductor package.