A semiconductor device includes: a semiconductor element; and a first conductor and a second conductor respectively joined to a first surface and a second surface of the semiconductor element via Sn-based solder, in which a Ni-based plated layer is formed on surfaces of the first conductor and the second conductor that oppose the Sn-based solder and on the first surface and the second surface of the semiconductor element, and an interface reaction inhibition layer made of (Cu, Ni).sub.6Sn.sub.5 and having a layer thickness of 1.2 to 4.0 m is formed at an interface between the Ni-based plated layer and the Sn-based solder.

In an example, an apparatus comprises a lead frame that includes a first row of leads, a first pad coupled to the first row of leads, and a second row of leads parallel to the first row of leads. The lead frame also includes a second pad coupled to the second row of leads. The first and second pads are separated by a gap, and each of the first and second pads has a substantially uniform thickness. The apparatus also includes a device coupled to the first and second pads. The first and second pads are exposed to an exterior of the apparatus.

A device comprises a substrate) of a first material with a surface, which is modified by depositing a bi-layer nanoparticle film. The film includes a nanoparticle layer of a second material on top of and in contact with surface, and a nanoparticle layer of a third material on top of and in contact with the nanoparticle layer of the second material. The nanoparticles of the third material adhere to the nanoparticles of the second material. The substrate region adjoining surface comprises an admixture of the second material in the first material. A fourth material contacts and chemically/mechanically bonds to the nanoparticle layer of the third material.

An example packaged IC includes a lead frame having a supply pin and a ground pin. The supply pin includes first and second supply leads extending from a proximal portion of the supply pin. The ground pin includes first and second ground leads extending from a proximal portion of the ground pin. A first IC network has a first supply terminal coupled to the first supply lead via a first conductor (e.g., bond wire or bump bond). The first IC network also has a first ground terminal coupled to the first ground lead via a second conductor. A second IC network has a second supply terminal coupled to the second supply lead via a third conductor. The second IC network also has a second ground terminal coupled to the second ground lead via a fourth conductor.

A semiconductor package carrier structure is provided and includes a substrate body, a dielectric material, and a patterned circuit layer. The substrate body has a plurality of openings, a plurality of conductive pillars, and at least one die placement portion. The dielectric material is disposed in the plurality of openings. The patterned circuit layer is disposed on a surface of the substrate body. Side surfaces of the plurality of conductive pillars and the die placement portion are all in a concave arc shape. The patterned circuit layer includes a die placement pad corresponding to the die placement portion and a plurality of bonding pads corresponding to the plurality of conductive pillars. A method of manufacturing the semiconductor package carrier structure is further provided.

A method includes removing an oxide layer from select areas of a surface of a metal structure of a lead frame to create openings that extend through the oxide layer to expose portions of the surface of the metal structure. The method further includes attaching a semiconductor die to the lead frame, performing an electrical connection process that electrically couples an exposed portion of the surface of the metal structure to a conductive feature of the semiconductor die, enclosing the semiconductor die in a package structure, and separating the electronic device from the lead frame. In one example, the openings are created by a laser ablation process. In another example, the openings are created by a chemical etch process using a mask. In another example, the openings are created by a plasma process.

A method of forming a lead frame can include: providing a frame base; providing a substrate to support the frame base; and selectively etching the frame base to form first and second type pins. The first type pins are distributed in the central area of the lead frame, and the second type of the pins are distributed in the edge area of the lead frame. The first type pins are separated from the second type of the pins, and the first and second type pins are not connected by connecting bars. A pattern of a first surface of the first and second type pins is different from that of a second surface of the first and second type pins. The metal of the first surface is different from the metal of the second surface, and the second surface is opposite to the first surface.

A method of forming a package structure includes disposing a die adhesive layer on a wafer, lowering a partial connecting property of the die adhesive layer, separating a plurality of dies of the wafer and disposing each of the dies on a leadframe. A connecting property of a partial area of the die adhesive layer is lowered, and the connecting property of the partial area of the die adhesive layer is corresponding to a plurality of cutting streets of the wafer. The dies are separated according to the cutting streets of the wafer. The partial area of the die adhesive layer is corresponding to a plurality of leads of the leadframe, and a connecting strength between the die adhesive layer and each of the leads is lower than a connecting strength between the die adhesive layer and a die pad of the leadframe.

A semiconductor package includes: a molded body having opposite first and second sides; at least one semiconductor die encapsulated by the molded body; and a die carrier having opposite first and second sides. The semiconductor die is arranged over the first side of the die carrier. The second side of the die carrier is at least partially exposed from the second side of the molded body, forming at least one exposed portion of the die carrier. The first side of the molded body includes a first portion protruding from a second portion in a vertical direction perpendicular to the first side, forming a planar surface. The second portion extends completely along at least one edge of the first side. A center point of the first portion is in vertical alignment with a center point of the exposed portion.

A method of forming one or more semiconductor packages includes mounting one or more semiconductor dies on the metal strip such that the one or more semiconductor dies are in a flip chip arrangement whereby terminals of the one or more semiconductor dies face the upper surface of the metal strip, forming an electrically insulating encapsulant material on the upper surface of the metal strip that encapsulates the one or more semiconductor dies, and forming package terminals that are electrically connected with the terminals of the one or more semiconductor dies, wherein the package terminals are formed from the metal strip or from metal that is deposited after removing the metal strip.